• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.344-349
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• 2005

This paper is studied on the effect of TiAlN coated ball end mill on cutting characteristic of high hardness steels in dry cutting condition without coolant. KP4 steels[HRC32] and STD11[HRC60] heat treated steels wert: used as the workpiece and WC-Co ball end mill and single and multi layer TiAlN coated ball end mill were utilized. Results showed that TiAlN coated ball end mill were increased the cutting length than WC-Co ball end mill in the cutting speed$[245\~320m/min]$ about $2\~5$ times for KP4 steels and about $2.7\~4.3$ times for STD11 heat treated steels. The multi layer TiAlN coated ball end mill is good about $1.2\~1.7$ times for KP4 steels and STD11 steels than single layer coated.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.211-214
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• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.686-689
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• 2012

In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.775-779
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• 2006

In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.