Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
- /
- Pages.93-93
- /
- 2008
Raman characteristics of polycrysta1line 3C-SiC thin films grown on AlN buffer layer
AlN 버퍼층위에 성장된 다결정 3C-SiC 박막의 라만 특성
- Lee, Yun-Myung (School of Electrical Eng., University of Ulsan) ;
- Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
- Published : 2008.11.06
Abstract
This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar +