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http://dx.doi.org/10.4313/JKEM.2006.19.8.775

Light Enhancement Al2O3 Passivation in InGaN/GaN based Blue Light-emitting Diode Lamps  

So Soon-Jin (Knowledge*On Inc.)
Kim Kyeong-Min (School of Electrical Electronic and Information Engineering, Wonkwang University)
Park Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.8, 2006 , pp. 775-779 More about this Journal
Abstract
In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.
Keywords
InGaN; GaN; $Al_2O_3$; LED; Sputtering system; Packaged lamp;
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