• 소성∙가공
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• 제28권1호
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.441-446
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• 2017

Aluminum nitride fibers were synthesized by carbothermal reduction and nitridation of precursor fibers obtained by electrospinning. The starting materials used to synthesize the AlN fibers were $Al(NO_3)_3{\cdot}9H_2O$ and urea. Polyvinylpyrrolidone with increasing viscidity was used as the carbon source to obtain a composite solution. The mixed solution was drawn into a plastic syringe with a stainless steel needle, which was used as the spinneret and connected to a 20 kV power supply. A high voltage was supplied to the solution to facilitate the formation of a dense net of fibers on the collector. The precursor fibers were dried at $100^{\circ}C$ and then heated to $1,400^{\circ}C$ for 1 h in a microwave furnace under $N_2$ gas flow for the carbothermal reduction and nitridation. X-ray diffraction studies indicated that the synthesized fibers consisted of the AlN phase. Field emission scanning electron microscopy studies indicated that the diameter of the calcined fibers was approximately 100 nm.

• 센서학회지
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• 제23권6호
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• 센서학회지
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• 제23권2호
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 한국결정성장학회지
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• 제26권1호
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• pp.49-52
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• 2016

본 연구에서는 AlN 결정 성장시 중요한 공정변수 중의 하나인 성장 압력과 온도 조건에 따라 다르게 성장되는 AlN 결정상의 결과에 대하여 고찰하였다. AlN 결정 성장은 6H-SiC 종자 결정을 사용하여 PVT(Physical Vapor Transport)법을 적용하여 성장시켰다. 성장 압력과 온도에 따라 AlN 결정의 특성이 변화하였고, Raman 분석을 통해 다양한 방향을 갖는 AlN 결정이 SiC 종자 결정 위에 성장되는 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• 한국세라믹학회지
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• 제48권5호
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• pp.368-372
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• 2011

Aluminum nitride (AlN) has excellent thermal conductivity, whereas it has some disadvantage such as low sinterability. In this study, the effects of sintering additive content and sintering condition on thermal conductivity of pressureless sintered AlN ceramics were examined on the variables of 1~3 wt% sintering additive ($Y_2O_3$) content at $1900^{\circ}C$ in $N_2$ atmosphere with holding time of 2~10 h. All AlN specimens showed higher thermal conductivity as the $Y_2O_3$ content and holding time increase. The formation of secondary phases (yttrium aluminates) by reaction of $Y_2O_3$ and $Al_2O_3$ from AlN surface promoted the thermal conductivity of AlN specimens, because the secondary phases could reduce the oxygen contents in AlN lattice. Also, thermal conductivity was increased by long sintering time because of the uniform distribution and the elimination of the secondary phases at the grain boundary by the evaporation effect during long holding time. A carbothermal reduction reaction was also affected on the thermal conductivity. The thermal conductivity of AlN specimens sintered at $1900^{\circ}C$ for 10 h showed 130~200W/mK according to the content of sintering additive.

• 한국분말재료학회지
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• 제25권5호
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• pp.426-434
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• 2018

In this study, $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) nanocomposite glass powder having a mean particle size of 50 nm and a specific surface area of $40m^2/g$ is used as a sintering additive for AlN ceramics. Densification behaviors and thermal properties of AlN with 5 wt% MCAS nano-glass additive are investigated. Dilatometric analysis and isothermal sintering of AlN-5wt% MCAS compact demonstrates that the shrinkage of the AlN specimen increases significantly above $1,300^{\circ}C$ via liquid phase sintering of MCAS additive, and complete densification could be achieved after sintering at $1,600^{\circ}C$, which is a reduction in sintering temperature by $200^{\circ}C$ compared to conventional $AlN-Y_2O_3$ systems. The MCAS glass phase is satisfactorily distributed between AlN particles after sintering at $1,600^{\circ}C$, existing as an amorphous secondary phase. The AlN specimen attained a thermal conductivity of $82.6W/m{\cdot}K$ at $1,600^{\circ}C$.

• 한국세라믹학회지
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• 제45권12호
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• pp.827-831
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• 2008

Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.