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http://dx.doi.org/10.6111/JKCGCT.2016.26.1.049

Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method  

Shin, Hee-Won (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Dong-Hoon (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Hwang-Ju (Department of Advanced Materials Engineering, Dong-Eui University)
Park, Mi-Seon (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Jung-Gon (Daegu Gyeongbuk Institute of Science & Technology)
Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology)
Lee, Myung-Hyun (Korea Institute of Ceramic Engineering and Technology)
Seo, Won-Seon (Korea Institute of Ceramic Engineering and Technology)
Abstract
The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.
Keywords
Aluminum nitride; AlN; PVT (Physical Vapor Transport); Growth pressure; Growth temperature;
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