• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.

• ETRI Journal
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• v.27 no.3
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.77-78
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.428-432
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• 1998

We fabricated 1$\times$8 array of GaAs/AlGaAs quantum well infrared photodetectors for the long wavelength infrared detection which is based on the bound-continuum intersubband transition, and characterized its electrical and optical properties. The device was grown on SI-GaAs(100) by the molecular beam epitaxy and consisted of 25 period of 40 ${\AA} $ GaAs well and 500 ${\AA} $ $Al_{0.28} Ga_{0.72}$ As barrier. To reduce the possibility of interface states only the center 20 ${\AA} $ of the well was doped with Si ($N_D=2{\times}10^{18} cm^{-3}$). We etched the sample to make square mesas of 200$\times$200 $\mu\textrm{m}^2$ and made an ohmic contact on each pixel with Au/Ge. Current-voltage characteristics and photoresponse spectrum of each detector reveal that the array was highly uniform and stable. The spectral responsivity and the detectivity $D^＊$ were measured to be 180,260 V/W and $4.9{\times}10^9cm\sqrt{Hz}/W$ respectively at the peak wavelength of $\lambda$ =7.8 $\mu\textrm{m}$ and at T=10 K.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.