• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Proceedings of the Membrane Society of Korea Conference
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• 1997.04b
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• pp.27-28
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• 1997

최근 들어 분리공정의 발달과 산업의 고도화에 따라 기체 및 액체분리의 중요성이 강조되면서 열적, 화학적 그리고 기계적 안정성이 좋으며, 수명이 길고, 세척과 재생이 용이하며, 미생물에 의한 손상이 없는 무기막에 대한 연구가 진행중이다. 무기막은 기공의 크기에 따라 크게 다공성 막과 비다공성 막의 두 종류로 구분된다. 비다공성 금속막은 특정 기체에만 투과성을 가지며, 이때 기체는 용해-확산(solution-diffusion)기구에 의해 금속막을 투과하므로 특정기체에 대한 선택도는 매우 크나 투과도가 매우 작고 가격이 비싼 단점을 가지고 있다. 다공성 막은 기체 투과율이 큰 반면 기체 선택도가 작은 단점을 가지고 있다. 현재 기체분리에 사용되고 있는 무기막은 기공크기가 40${\AA}$ 이상으로 기체 분리가 Kundsen diffusion에 의해 이루어지므로, 기체 투과도는 큰 반면에 기체에 대한 선택도는 그리 크지 않다. 따라서 최근 들어서는 다공성 담체에 기공이 작은 ($d_{pore}<20{\AA}$)박막을 담지시켜 기체의 분리 선택도를 향상시키기 위한 연구가 활발히 이루어지고 있다. 본 연구에서는 유기금속 화학증착법(metal-organic chemical vapor deposition:MOCVD)을 이용하여 수소 선택성을 가지는 $SiO_2/Al_2O_3$ 복합막을 비율별로 제조하여 증착속도를 알아보고, 열과 수분에 노출시켜 박막의 기체투과도 변화를 살펴보았다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.28-28
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• 2001

$TiCl_44,{\;}AICl_3,{\;}H_2,{\;}Ar,{\;}NH_3$ 기체를 사용하여 플라즈마 화학 증착법으로 $(Ti_{1-x}AI_x)N$ 피막을 증착한 후 진공열처리 실험을 통해 열처리 전후에 나타나는 피막의 가계적 특성 변화 및 상변화 양상에 대해 연구하였다. 기판으로는 M2 고속도강과 알루미나(${\alpha}-Al_2O_3$)를 사용하였으며, 열처리 실험은 진공 열처리로를 이용하여 $800$ ~ $1100^{\circ}C$ 에서 진행하였다. M2 고속도강 위에 증착한 $(Ti_{1-x}AI_x)N$ 피막은 모두 (200) 우선 방위를 갖고 있었으며, AI의 함량이 높아짐에 따라 입자의 크기가 미세해져 $(Ti_{0.2}AI_{0.8})N$ 의 경우 수 nm의 업자들로 이루어져 있었다. 열처리 시간을 일정하게 하고, 그 온도를 증가시킬 경우 비교적 낮은 온도 영역($~900^{\circ}C$)에서는 경도 증가를 나타내지만, 열처리가 더욱 진행됨에 따라 다시 경도가 감소하는 양상을 나타내었으며, 열처리 온도를 일정하게 하고 열처리 시간을 변화 시킬 경우에도 초기에 경도가 증가하다가 열처리가 진행됨에 따라 경도가 다시 감소하는 현상을 관찰 하였다. 이때 경도증가 정도는 Al 함량이 높을 수록 뚜렷하고 오래 지속되었으며, $(Ti_{0.2}AI_{0.8})N$ 피막의 경우 열처리 전 $2000HK_{0.01}$에서 열처리 후 $4500HK_{0.01}$로, 매우 큰 경도 증가를 나타내었다. 이와 같은 열처리 전후의 기계적 특성 변화는 준 안정상의 $(Ti_{1-x}AI_{x})N$ 피막에서, 열처리가 진행됨에 따라 미세한 AlN 업자가 석출되면서 나타나는 현상으로, 고분해능 전자현미경(HRTEM) 분석을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다.

• Progress in Superconductivity
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• v.11 no.2
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• pp.123-127
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• 2010

The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $\Delta\phi$ values of ${\sim}8.9^{\circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{\sim}16\;{\AA}/sec$. During deposition, the change of oxygen partial pressure(${\rho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{\circ}C$ with superior $\Delta\phi$ and $\Delta\omega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{\circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $\Delta\phi$ value of $5.5^{\circ}$, $\Delta\omega$ value of $2^{\circ}$ and Ra value of 2.2 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.120-121
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• 2007

In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.309-316
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• 2006

The $SnO_{2}$ thin film sensors were fabricated by a thermal oxidation method. $SnO_{2}$ thin film sensors were treated in $N_{2}$ atmosphere. The sensors with $O_{2}$ treatment after $N_{2}$ treatment showed 70 % sensitivity for 1 ppm $H_{2}S$ gas, which is higher than the sensors with only $O_{2}$ treatment. The Ni metal was evaporated on Sn thin film on the $Al_{2}O_{3}$ substrate. And the sensor was heated to grow the Sn nanowire in the tube furnace with $N_{2}$ atmosphere. Sn nanowire was thermally oxidized in $O_{2}$ environments. The sensitivity of $SnO_{2}$ nanowire sensor was measured at 500 ppb $H_{2}S$ gas. The selectivity of $SnO_{2}$ nanowire sensor compared with thin film and thick film $SnO_{2}$ was measured for $H_{2}S$, CO, and $NH_{3}$ in this study.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.450-455
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• 2004

NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Progress in Superconductivity
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• v.5 no.1
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• pp.84-87
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• 2003

$YBa_2$$Cu_3$$O_{7-x}$ (YBCO) thin films were fabricated by MOD-TFA process via dip-coating method on LaAlO$_3$, (LAO) single crystalline substrates. In this study, we investigated effect of annealing temperature and solvent on the microstructure and texture of YBCO thin films. The precursor films were annealed at various temperature to improve surface morphologies and phase purities. It was shown that the films annealed at relatively lower and higher temperature exhibit low phase purity and crystallinity. The effect of various solvents on surface morphologies and second phase has been investigated.