• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1093-1096
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• 2001

The Solid solution of A $l_2$ $O_3$ into ZnO can be defined by the substitution reaction of Al$\^$3+/ ions into the Zn$\^$2+/ sites of ZnO crystal lattice, the tetrahedral interstices composed of four neighbor oxygen ions in the wurtzite structure. Since the reaction either creates new zinc vacancies or consumes the oxygen vacancies, it should be in equilibrium with ZnO nonstoichiometry and disorder reactions. The relationships make oxygen partial pressure P$\sub$o2/ control the concentrations of the vacancies and consequently limit the Al solubility in ZnO, [Al$\sub$zn/]$\sub$max/. This paper firstly reports with a refined model for defect quilibria in ZnO that the solubility decrease with the increase of P$\sub$o2/, [Al$\sub$zn/]$\sub$max/ P$\sub$o2/$\^$-1/4/.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.119-125
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• 2013

In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.

• Journal of Korea Foundry Society
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• v.43 no.6
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• pp.286-293
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• 2023

In this study, we investigated the microstructural evolution of Al-Mg-Zn aluminum alloy billet during homogenization treatment using OM, SEM, EDS and DSC. There were numerous phases found, such as; AlMgZn, AlMgFe, and AlMgZnSi phases, in the grain of the cast billet. After 6 hours homogenization treatment, Zn was mostly dissolved, whereas, Mg and Si were only partly dissolved. Accordingly, only AlMgFe and AlMgSi remained. After 18 hours, all of the leftover Mg and Si were dissolved, leaving only AlMgFe, which was also found after 24 hours. The results of the alloy design program, JMatPro showed that Mg dissloved more rapidly than Zn. According to the homogenization kinetic equation, Mg and Zn are completely dissolved within 1.9 and 3.5 hours, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.568-571
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• 2005

Highly transparent ZnO films with low resistivity for thin film solar cell applications were fabricated at low temperature by rf magnetron sputtering. Al-doped ZnO films were deposited on glass substrates at a substrate temperature of $200^{\circ}C$. electrical and optical properties of the ZnO:Al films were investigated in terms of the reparation conditions. The transmittance of the ZnO:Al films in the visible range is 90 %. The lowest resistivity of the ZnO:Al films is about $5.7\times10^{-4}$ $\Omega$ cm at the Al content of 2.5 wt% with the film thickness of 500 nm. After deposition, the smooth surface of ZnO:Al films were etched in diluted HCl (0.5%) to investigate the variation of electrical and surface morphology properties due to an textured surface.

• Journal of Korea Foundry Society
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• v.33 no.3
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• pp.113-121
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• 2013

The effects of Zn and Mg amounts on the solidification characteristics, microstructure, thermal conductivity and tensile strength of Al-Zn-Mg-Fe alloys were investigated for the development of high thermal conductivity aluminium alloys for die casting. Zn and Mg amounts in Al-Zn-Mg-Fe alloys had a little effect on the liquidus / solidus temperature, the latent heat for solidification and the fluidity of Al-Zn-Mg-Fe alloys. Thermo-physical modelling of Al-Zn-Mg-Fe alloys by JMatPro program showed $MgZn_2$, AlCuMgZn and Al3Fe phases on microstructure of their alloys. Increase of Zn and Mg amounts in Al-Zn-Mg-Fe alloys resulted in gradual reduction of the thermal conductivity of their alloys. Increase of Mg amounts in Al-2%Zn-Mg-Fe alloys had little effect on the tensile strength of their alloys, but increase of Mg amounts in Al-4%Zn-Mg-Fe alloys resulted in steep increase of the tensile strength of their alloys.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.206-210
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• 2010

Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2011.11a
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• pp.434-437
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• 2011

본 연구에서는 알루미늄(Al), 아연(Zn)이 단일 성분으로 존재하는 경우의 폭발위험성이 Al-Zn혼합물 분진에 비하여 어떻게 변화하는지를 알기 위하여 폭발하한농도(LEL), 최대폭발압력($P_{max}$)등에 대한 폭발특성을 실험적으로 조사하였다. 그 결과 Al은 Zn의 혼합에 의해 폭발하한농도(LEL)가 급격히 증가하고 최대폭발압력이 감소하였으며, Al-Zn혼합물의 폭발위험성은 단일 성분의 Al에 비하여는 낮지만 Zn 단독의 경우보다는 높은 것을 알수 있었다. 그러므로 Zn-Al혼합물이 Al보다 폭발성이 낮아지지만 화재폭발 가능성이 충분히 잠재되어 있으므로 예방대책이 필요하다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.37-40
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• 2003

Amorphous $Al_2O_3$ nanotubes have been fabricated by utilizing the ZnO nanowires as template with wet etching method. ZnO nanowires synthesized by thermal evaporation are conformally coated with $Al_2O_3$ by atomic-layer deposition(ALD) method. The $Al_2O_3$-coated ZnO nanowires are of core-shell structure; ZnO core nanowires and $Al_2O_3$ shells. When the $ZnO/Al_2O_3$ core-shell structure is dipped in $H_3PO_4$ solution at $25^{\circ}C$ for a 6 min, the core ZnO materials are completely etched, and only $Al_2O_3$ nanotubes are remained. This nanotube fabrication is technically easier than others, and simply approachable. Transmission electron microscopy shows that the $Al_2O_3$ nanotubes have various thicknesses that can be controlled.