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http://dx.doi.org/10.5757/JKVS.2010.19.3.206

Properties of Al-doped ZnO Transparent Conducting Oxide Films Deposited with Ar Flow Rate by RF Magnetron Sputtering  

Yi, I.H. (Advanced Development Team, IPS Ltd)
Kim, D.K. (Green Home Energy Technology Research Center, Kongju National University)
Kim, H.B. (Department of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.3, 2010 , pp. 206-210 More about this Journal
Abstract
Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.
Keywords
Al-doped ZnO; Transparent conducting oxide; Ar flow rate; Glass substrate;
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