• International Journal of Internet, Broadcasting and Communication
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• 제12권2호
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• 한국표면공학회지
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• 제47권5호
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• pp.252-256
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• 2014

The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

• 한국세라믹학회지
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• 제40권3호
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• pp.249-254
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• 2003

AI, AIN 및 질화반응 촉진을 위한 첨가제로서 Li$_2$CO$_3$, Y$_2$O$_3$, CaCO$_3$를 혼합한 후 성형체를 제조하여 질소 분위기에서 열처리하였고, 용매 및 첨가제의 종류와 질화온도가 AI-AIN계의 질화반응에 미치는 영향에 대하여 고찰하였다. 1.0wt%의 olcic acid.를 첨가한 ethanol을 혼합용매로 사용한 경우 AI과 AIN 입자의 표면개질 효과를 질화반응시 산화물 생성을 최소화시킬 수 있었다. 그리고 AI-AIN계에 Li$_2$CO$_3$ 또는 CaCO$_3$를 첨가한 경우Y$_2$O$_3$를 첨가한 경우에 비하여 질화 열처리시 생성되는 산화물의 생성을 크게 억제시킬 수 있었다.

• 전기화학회지
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• 제6권4호
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• pp.266-270
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• 2003

우수한 전기화학적 특성을 갖는 $LiN_{0.8}Co_{0.2}O_2$ 정극 활물질을 평균 $1{\mu}m$ 이하의 균일한 입자 분포를 얻을 수 있는 액상 반응법의 하나인 졸겔법을 이용하여 제조하였다. 제조된 $LiN_{0.8}Co_{0.2}O_2$를 X선 회절과 TEM(transmission electron microscopy)분석을 통하여 미세구조를 분석하였다. 충방전 실험전과 실험후의 미세구조의 변화에 중점을 주어 실험하였으며, 그 결과 졸겔법으로 제조된$LiN_{0.8}Co_{0.2}O_2$ 정극 활물질은 높은 가역 용량을 가지며 뛰어난 싸이클 특성을 가지고 있다 이는 졸겔법으로 제소함으로 인하여 Ni과 Co양이온의 균일한 화학조성을 가지고 있기 때문이라 생각된다. 특히 $LiCoO_2$에서 관찰되었던 cubic spinel disordering과 심각한 구조적 결함이 관찰되지 않았다. 또한 Al 치환으로 인하여 싸이클 특성을 좋아졌지만 용량은 감소하였다.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1563-1566
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• 2009

One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.

• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.3005-3012
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• 2013

The effect of Mn-promotion on high surface area Al-pillared montmorillonite (AlMMT) supported Co nanoparticles prepared by hydrothermal method have been investigated. A series of different weight% Mn-promoted Co nanoparticles were prepared and characterized by XRD, TPR, TGA, BET and SEM techniques. An increase in the surface area of MMT is observed with Al-pillaring. Fischer-Tropsch catalytic activity of the as prepared catalysts was studied in a fixed bed micro reactor at $225^{\circ}C$, $H_2/CO$ = 2 and at 1 atm pressure. The data showed that by the addition of Mn the selectivity of $C_1$ dropped drastically while that of $C_2-C_{12}$ hydrocarbons increased significantly over all the Mn-promoted Co/AlMMT catalysts. The $C_{13}-C_{20}$ hydrocarbons remained almost same for all the catalysts while the selectivity of $C_{21+}$ long chain hydrocarbons decreased considerably with the addition of Mn. The catalyst with 3.5%Mn showed lowest $C_{21+}$ and highest $C_2-C_{12}$ hydrocarbons selectivity due to cracking of long chain hydrocarbons over acidic sites of MMT.

• 한국표면공학회지
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• 제54권3호
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• 한국결정성장학회지
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• 제34권2호
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• pp.61-65
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• 2024

HVPE(Hydride vapor phase epitaxy) 공법은 기체상의 원료를 사용하여 박막 또는 단결정을 제조하는 공법이다. 화학적 기상증착법의 원리를 적용하여 난용융성 또는 고융점의 물질의 단결정을 성장할 수 있는 공법으로서, 질화갈륨(GaN) 단결정을 얻을 수 있는 공법 중 하나이다. 최근 동 공법을 이용하여 질화알루미늄(AlN) 단결정을 성장하고자 하는 연구가 많이 수행되어져 왔으나, 아직은 좋은 결과를 얻지 못하고 있다. 본 연구에서는 AlN 단결정을 HVPE 공법으로 성장하고자 하였다. 성장 공정에서 질소를 운송가스(Carrior gas)로 사용하였으며, 질소(N2)의 양의 변화에 따른 성장 결과를 고찰하여 보았다. 질소의 양이 증가함에 따른 성장 결정의 변화 양상을 확인할 수 있었다. 성장된 AlN 단결정의 형상을 광학 현미경을 사용하여 관찰하였고, 이중결정 X선 회절 분석(DCXRD, Double crystal X-ray diffractometry)을 이용하여, AlN 결정의 생성을 확인함과 동시에 성장된 단결정의 결정성도 알아보았다.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.156-162
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• 2017

CuO의 함량이 반응활성에 미치는 영향을 조사하기 위하여 CuO(x)/0.3Al-0.7Ce (x = 2~20 wt%) 촉매를 함침법으로 제조하고 저온 CO 산화반응을 수행하였다. CuO(10)/0.3Al-0.7Ce 촉매가 반응물 중 수분의 존재 유무에 관계없이 가장 우수한 반응활성을 나타내었다. 수분의 존재는 활성점에 CO와의 경쟁흡착으로 활성점이 감소하여 50% CO 전환율 온도인 $T_{50%}$가 약 $50^{\circ}C$ 고온으로 이동되어 관찰되었다. $N_2O$-적정실험으로 구한 구리 표면적과 CO-펄스 실험으로 계산된 격자산소의 양은 CuO의 함량 증가에 따라 증가하였고, CuO(10)/0.3Al-0.7Ce 촉매에서 최대화되었다. 이러한 특성 분석결과는 사용된 촉매의 CO 산화반응에 대한 $T_{50%}$의 경향과 잘 일치하였다. 위의 특성분석 결과로부터, CuO(x)/0.3Al-0.7Ce 촉매의 CO 산화반응에 대한 반응성은 구리 표면적과 격자산소의 양과 밀접하게 관련된다고 결론지을 수 있다.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.