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High-temperature Oxidation of the TiAlCrSiN Film Deposited on the Cemented Hard Carbide

  • Lee, Dong Bok (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • Received : 2014.10.08
  • Accepted : 2014.10.23
  • Published : 2014.10.31

Abstract

The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

Keywords

References

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