• 한국표면공학회지
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• 제47권4호
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• 열처리공학회지
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• 제23권2호
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• pp.69-74
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• 2010

AlN thin films were deposited by using a two-facing-targets type sputtering system (TFTS), and their deposition characteristics, microstructure and texture were investigated. Total gas pressure was kept constant at 0.4 Pa and the partial pressures of nitrogen, $PN_2$ (($N_2$ pressure)/($Ar+N_2$ pressure)) varied from 0 to 0.4 Pa. The texture of the film cross-sections and surface morphology were observed by field emission scanning electron microscope (FE-SEM). The crystallographic orientation of the films were analyzed by X-ray diffraction (XRD). Deposition of AlN film depends on $N_2$ partial pressure. The best preferred oriented AlN thin films can be deposited at a nitrogen partial pressure of $PN_2$ = 0.52. As-deposited AlN films show preferred orientation and columnar structure, and the grAlN size of AlN films increases with increasing sputtering current.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 열처리공학회지
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• 제21권1호
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• 한국세라믹학회지
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• 제51권5호
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• pp.498-504
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• 2014

Particulate nitride composites have been fabricated by sintering the compacted powder of AlN and 5 - 64.3 mol% $Al_2O_3$, with a small addition of $Y_2O_3$ ($Y_2O_3$/AlN, 1 wt%), in 1-atm nitrogen gas at $1650-1900^{\circ}C$. The composites were characterized in terms of sintering behavior, phase relations, microstructure and thermal shock resistance. AlN, 27R AlN pseudopolytype, and alminium oxynitride (AlON, $5AlN{\cdot}9Al_2O_3$) were found to existin the sintered material. Regardless of batch composition, the AlN-$Al_2O_3$ powder compacts exhibited similar sintering behavior; however, the degree of shrinkage commonly increased with increasing $Al_2O_3$ content, consequently giving high sintered bulk density. By increasing the $Al_2O_3$ addition up to ${\geq}50 mol%$, the matrix phase in the sintered material was converted from AlN or 27R to AlON. Above $1850^{\circ}C$, a liquid phase was formed by the reaction of $Al_2O_3$ with AlN, aided by $Y_2O_3$ and mainly existed at the grain boundaries of AlON. Thermal shock resistance was superior in the sintered composite consisting of AlON with dispersed AlN or AlN matrix phase.

• 한국표면공학회지
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• 제42권2호
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• 열처리공학회지
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• 제10권2호
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• pp.138-149
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• 1997

TiN and AlN are ceramic materials with extensive applications due to its excellent mechanical and chemical properties at elevated temperature. The purpose of this research is to develop the method for the synthesis of ternary nitride powder, titanium-aluminum-nitrogen system, which have an excellent property of both TiN and AlN. The ternary nitride such as $Ti_3AlN$, $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the interdiffusion nitriding method in Ar gas, however, the ternary nitride coexist with TiN, AlN, $Ti_3Al$ and ${\alpha}$-Ti. The ternary nitride are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN, $Ti_3Al$ and AlN above $1400^{\circ}C$. The thermal oxidation characteristics of the Ti-Al-N compound synthesized by the interdiffusion nitriding method is superior to that of the TiN+AlN mixed powder, and the oxidation for both materials show the differential behaviors.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2003년도 추계학술대회
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• pp.89-94
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• 2003

Hard coatings are known to improve the performance of cutting tools in aggressive machining applications, such as high speed machining. New superhard Ti-Al-Si-W films, characterized by a nanocomposite nano-sized (Ti,Al,Si)N crystallites embedded in amorphous $Si_3 N_4$ matrix, could be successfully synthesized on WC-Co substrates by a hybrid coating system of arc ion plating(AIP) and sputtering method. The hardness of Ti-Al-Si-N film increased with incorporation of Si, and had the maximum value ~50 GPa at the Si content of 9 at.%, respectively. And the X-ray diffraction patterns of Ti-Al-Si-N films with various Si content is investigated. In this study, Ti-Al-Si-N coatings were applied to end-mill tools made of WC-Co material by a hybrid coating system. Cutting tests fir the high-hardened material (STD11,$H_R$)C62 and their performances in high speed cutting conditions were studied. Also, the tool wear and tool lift of Ti-Al-Si-N with various si(6, 9, 19) contents were measured.

• 한국세라믹학회지
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• 제33권3호
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• pp.285-292
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• 1996

질소 분위기에서 상압소결한 알루미나 소결체의 열전도도에 대한 AIN 첨가효과를 검토하였다. AIN 함량이 1,5 및 10 mol%롤 증가하면 $Al_{2}O_{3}$-AIN 소결체의 열전도도는 급격히 감소하지만, 20 및 25 mol%가 첨가되면 거의 일정하였다. 1~10mol% AIN이 첨가된 알루미나 소결체의 열전도도는 $1700^{\circ}C$의 소결온도에서 최대값을 나타내었으며, 소결온도가 $1800^{\circ}C$로 증가하면 감소하는 경향을 보였다. 이러한 현상은 $1700^{\circ}C$까지는 $\alpha$-$Al_{2}O_{3}$ 및 $Al_{2}O_{3}$와 AIN이 반응하여 생성되 ALON상이 존재하나, $1750^{\circ}C$부터 ${\gamma}$-ALON($9Al_{2}O_{3}$.AIN) 및 $\Phi$($5Al_{2}O_{3}$.AIN)상 등의 2차상을 생성하는 것에 기인된다. 20 및 25 mol% AIN이 첨가된 알루미나 소결체의 열전도도는 $1800^{\circ}C$에서 최대값을 나타내며, $1600^{\circ}C$에서는 $\alpha$-$Al_{2}O_{3}$ 및 ALON상이 존재하나 그 이상의 온도에서는 모두 ALON상만이 존재하였다.