• Journal of Electrochemical Science and Technology
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• v.9 no.1
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• pp.9-19
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• 2018

The anodic behavior of aluminum (Al) foils with varying purity, capacitance, and withstand voltage in organic electrolytes was examined for EDLC. The results of cyclic voltammetry (CV) and chronoamperometry (CA) experiments showed that the electrochemical stability improves when Al foil has higher purity, lower capacitance, and higher withstand voltage. To improve the electrochemical stability of EDLC current collectors made of low-purity foil (99.4% Al foil), the foil was modified by chemical etching to reduce its capacitance to $60{\mu}F/cm^2$ and forming to have withstand a voltage of 3 Vf. EDLC cells using the modified Al foil as a current collector were made to 2.7 V with 360 F, and a constant voltage load test was subsequently performed for 2500 hours at high temperature under a rated voltage of 2.7 V. The reliability and stability of the EDLC cell improved when the modified Al foil was used as a current collector. To understand the deterioration process of the Al current collector, standard cells made of conventional Al foil under a constant voltage load test were disassembled, and the surface changes of the foil were measured every 500 hours. The Al foil became increasingly corroded, causing the adhesion between the AC coating layer and the Al foil to weaken, and it was confirmed that partial AC coating layer peeling occurred.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.620-627
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• 1999

Electrochemical properties of the Al current collector being used in lithium ion batteries have been studied in the 4 different aprotic electrolytes(1 M $LiBF_4$ EC : DMC, 1 M $LiBF_4$ EC : EMC. 1 M $LiPF_6$ EC : DMC. 1 M $LiPF_6$ EC : EMC) employing cyclic voltammetry and impedance measurement. Al electrode showed a wide range of the electrochemical window(0.5~4.1 V vs. $Li/Li^{+}$). However, solid interfacial materials has been formed on the Al surface due to reduction of impurities($H_2O$, $O_2$, etc), lithium salts, and electrolytes at low applied potentials, and aluminum oxides in the highly oxidizing potential as well. Especially, Al current collector was susceptible to localized in consequence of impurities in electrolytes.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.39-46
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• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.157-162
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• 2010

The electrodes comprising nano-sized $LiFePO_4$, carbon black and binder are prepared with two different Al current collectors. One is the generally used normal Al foil and the other is the chemically etched Al foil. Surface characteristics of each Al foil and electrochemical performance of the cathodes using each foil are investigated. The electrode from the etched Al foil exhibits better physical and electrochemical properties as compared to those of the normal Al foil because the etched Al foil has rough surface with sub-micron pores which improve the adhesion between the electrode materials and the substrate. The electrode on the etched Al foil has such a strong peel strength that the impedance is smaller than that of normal one. Indeed the $LiFePO_4$ electrode from the etched Al foil exhibits a better rate capability and remains intact even after storage for 1 week at the charged state at the elevated temperature $60^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.250-255
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• 2019

Poly(ethylene oxide) (PEO)-based solid polymer electrolytes (SPEs) show promise for improving the lithium ion battery safety. However, due to oxidation of the PEO group and corrosion of the Al current collector, PEO-based SPEs have not previously been effective for use in $LiCoO_2$ (LCO) cathode materials at room temperature. In this paper, a semi-interpenetrating polymer network (semi-IPN) PEO-based SPE was applied to examine the performance of a LCO/SPE/Li metal cell at different voltage ranges. The results indicate that the SPE can be applied to LCO-based lithium polymer batteries with high electrochemical performance. By using a carbon-coated aluminum current collector, the Al corrosion was mostly suppressed during cycling, resulting in improvement of the cell cycle stability.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of Electrochemical Science and Technology
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• v.14 no.2
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• pp.184-193
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• 2023

This study investigates the effects of a carbon fiber layer formed on the surface of an etched aluminum current collector on the electrochemical properties of the activated carbon electrodes for an electric double layer capacitor. A particle size analyzer, field-emission SEM, and nitrogen adsorption/desorption isotherm analyzer are employed to analyze the structure of the carbon fiber layer. The electric and electrochemical properties of the activated carbon electrodes using a carbon fiber layer are evaluated using an electrode resistance meter and a charge-discharge tester, respectively. To uniformly coat the surface with carbon fiber, we applied a planetary mill process, adjusted the particle size, and prepared the carbon paste by dispersing in a binder. Subsequently, the carbon paste was coated on the surface of the etched aluminum current collector to form the carbon under layer, after which an activated carbon slurry was coated to form the electrodes. Based on the results, the interface resistance of the EDLC cell made of the current collector with the carbon fiber layer was reduced compared to the cell using the pristine current collector. The interfacial resistance decreased from 0.0143 Ω·cm² to a maximum of 0.0077 Ω·cm². And degradation reactions of the activated carbon electrodes are suppressed in the 3.3 V floating test. We infer that it is because the improved electric network of the carbon fiber layer coated on the current collector surface enhanced the electron collection and interfacial diffusion while protecting the surface of the cathode etched aluminum; thereby suppressing the formation of Al-F compounds.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.152-156
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• 2011

A room temperature ionic liquid (RTIL) based on trihexyl (tetradecyl)phosphonium bis(trifluoromethanesulfonyl) imide ([$(C_6H_{13})_3P(C_{14}H_{29)}$] [TFSI];P66614TFSI) was synthesized and analyzed to determine their characteristics and properties. The bis(trifluoromethanesulfonyl)imide (TFSI) anion is widely studied as an ionic liquid (IL) forming anion which imparts many useful properties, notably electrochemical stability. Especially its electrochemical and physical characteristics for solvent of lithium ion battery were investigated in detail. $P_{66614}$ TFSI exhibits fairly low conductivity (0.89 mS $cm^{-1}$) and higher viscosity (298 K: 277 cP; 343 K: 39 cP) than other ionic liquids, but it exhibits a high thermal stability (over $400^{\circ}C$). Especially corrosion behavior on Al current collector was tested at room temperature and further it was confirmed that thermal resistivity for Al corrosion was highly increased in 1.0M LiTFSI/$P_{66614}$-TFSI electrolyte comparing with other RTILs by linear sweep thermometry.