• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.257-261
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• 2013

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films using RF magnetron sputtering with various working pressure. To find optimal properties of AZO for transparent conducting oxides, the working pressure in sputtering process was varied as 0.07 Torr, 0.02 Torr, and 0.007 Torr, respectively. As working pressure increased, the crystallinity of AZO thin film was improved, the surface roughness of AZO thin film decreased. The transmittance of the film was over 80% in the visible light range regardless of the changes in working pressure. In case of 0.007 Torr, best electrical properties was shown due to the reduction of oxygen absorption by decreasing surface roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.80-81
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.271-272
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• 2012

Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.181-185
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• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.979-982
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• 2004

The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.229-238
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• 1996

The electromigration phenomena and the characterizations of the conductor lifetime (Time-To-Failure, TTF) in Al-1%Si thin film interconnections under D.C. and Pulsed D.C. conditions were investigated . Meander type test patterns were fabricated with the dimensions of 21080$mu \textrm{m}$ length, 3$\mu\textrm{m}$ width, 0.7$\mu\textrm{m}$ thickness and the 0.1$\mu\textrm{m}$/0.8$\mu\textrm{m}$($SiO_2$/PSG)dielectric overlayer. The current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were stressed in Al-1%Si thin film interconnection s under a D.C. condition. The peak current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were also applied under a Pulsed D.C. condition at frequencies of 200KHz, 800KHz, 1MHz, and 4MHz with the duty factor of 0.5. THe time-to-failure under a Pulsed D.C.($TTF_{pulsed D.C}$) was appeared to be larger than that under a D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition largely depends upon the appiled current densities respectively . This can be explained by a relaxation mechanism view due to a duty cycle under a Pulsed D.C. related to the wave on off. The relaxation phenomena during the pulsed off period result in the decayof excess vacancies generated in the Al-1%Si thin film interconnections because of the electrical and mechanical stress gradient . Hillocks and voids formed by an electromigration were observed by using a SEM (Scanning Electron Microscopy).

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.159-164
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• 2007

Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].