• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.24-27
• /
• 2004

ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.62-64
• /
• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.8
• /
• pp.1545-1551
• /
• 2002

The optical storage device has recently experienced significant improvement, especially for the aspects of high capacity and fast transfer rate. However, it is necessary to study a new shape of air bearing surface for the rotary type actuator because the optical storage device has the lower access time than that of HDD (Hard Disk Drives). In this study, we proposed the air bearing shape by using SA (Simulated Annealing) algorithm which is very effective to achieve the global optimum instead of many local optimums. The objective of optimization is to minimize the deviation in flying height from a target value 100nm. In addition, the pitch and roll angle should be maintained within the operation limits.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.1
• /
• pp.63-66
• /
• 2014

ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.536-539
• /
• 2000

The effects of annealing on the electrical and structural characteristics for the rf sputter deposited WO$_3$thin film. The sputtered thin films are annealed at 773K for 1 hour in air atmosphere. Oxygen flow rate were changed from 0 to 70% during sputtering. It is observed from the results of the AFM measurement that the average roughness for the rf sputter deposited WO$_3$thin film would be increased from 2.45 angstrom to 152 angstrom by annealing. The sheet resistance of the sputtered WO$_3$film is changed from insulting to MOhm after annealing. According to the results of the XRD, the as-deposited films revealed the amorphous state whereas the peaks of X-ray diffraction at 2 theta= 28 degrees and 2 theta = 25 degrees corresponding to the (111) and (200) plane of the WO$_3$film respectively are observed after annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.554-559
• /
• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

• Korean Journal of Materials Research
• /
• v.27 no.5
• /
• pp.242-247
• /
• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Journal of the Korean Society for Heat Treatment
• /
• v.33 no.2
• /
• pp.57-64
• /
• 2020

In the present study, we investigated whether the surface oxidation of C-bearing TWIP steel ℃curs in the air during specimen delivery from an annealing furnace to a water bath and how the microstructure and tensile properties are influenced by surface oxidation. A cold-rolled Fe-18Mn-0.6 (wt%) steel was exposed in the air for 5 s after annealing at various temperatures (750℃, 850℃ and 1000℃) for 10 min in a vacuum, and then water-quenched. For comparison, another specimen, which had been quartz-sealed in a vacuum, was annealed at 1000℃ for 10 min and immediately water-quenched without exposure to air. The 750℃ and 850℃-annealed specimens and the quartz-sealed specimen showed a γ-austenite single phase in the entire specimen due to negligible surface oxidation. However, the 1000℃-annealed specimen exhibited a dual-phase microstructure consisting of ε-martensite and γ-austenite at the sub-surface due to decarburization. Whereas the specimens without decarburization revealed high elongations of 70-80%, the decarburized specimen exhibited a low elongation of ~40%, indicating premature failure due to cracking inside the decarburized layer with ε-martensite and γ-austenite.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.34.2-34.2
• /
• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

• Journal of Powder Materials
• /
• v.3 no.2
• /
• pp.91-96
• /
• 1996

The effect of vacuum annealing on the oxidation behavior of milled WC-15%Co powder mixture has been studied. A cobalt component in the milled powder mixture was oxidized preferentially above 175$^{\circ}C$ in air. The specimens showed a steady increase in weight at 175$^{\circ}C$ but did constant weight followed by rapid increase in specimen weight at the beginning above 20$0^{\circ}C$. Oxidation of the milled powder mixture was significantly suppressed by vacuum annealing at 30$0^{\circ}C$ for 10 h. Suppression of oxidation by vacuum annealing and different oxidation behaviors of the milled powder mixture between 175$^{\circ}C$ and 20$0^{\circ}C$, were attributed to removal of strain energy stored in the cobalt powder during vacuum annealing or oxidation treatment above 20$0^{\circ}C$. The role of stored strain energy on oxidation of milled WC-15%Co powder mixture was proved by X-ray diffraction method and differential thermal analysis.