• Title/Summary/Keyword: AgO-Zn cell

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Characteristics of Organic Solar Cell having an Electron Transport Layer co-Deposited with ZnO Metal Oxide and Graphene using the Cyclic Voltammetry Method (순환전류법을 이용해 ZnO 금속산화물과 Graphene을 동시에 제막한 전자수송층을 갖는 유기태양전지의 특성)

  • Ahn, Joonsub;Han, Eunmi
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.1
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    • pp.71-75
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    • 2022
  • Graphene oxide was stirred with a ZnCl2:NaCl electrolyte and electrochemically coated by cyclic voltammetry to simplify the electron transpfer layer film forming process for organic solar cells and to fabricate an organic solar cell having it. The device structure is FTO/ZnO:graphene/P3HT:PCBM/PEDOT:PSS/Ag. Morphology and chemical properties of ETL were confirmed by scanning electron microscopy(SEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. As a result of XPS measurement, ZnO metal oxide and carbon bonding were simultaneously confirmed, and ZnO and graphene peaks were confirmed by Raman spectroscopy. The electrical characteristics of the manufactured solar cell were specified with a solar simulator, and the ETL device coated twice at a rate of 0.05 V/s showed the highest photoelectric conversion efficiency of 1.94%.

Enhanced Photo Current in n-ZnO/p-Si Diode Via Embedded Ag Nanoparticles for the Solar Cell Application

  • Ko, Young-Uk;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Yang, Seung-Dong;Kim, Seong-Hyeon;Kim, Jin-Sup;An, Jin-Un;Eom, Ki-Yun;Lee, Hi-Deok;Lee, Ga-Won
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.35-40
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    • 2015
  • In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

The Effects of Composition on the Interface Resistance in Bi-System Glass Frit (Bi 계열 Glass Frit 조성이 계면저항에 미치는 영향)

  • Kim, In Ae;Shin, Hyo Soon;Yeo, Dong Hun;Jeong, Dae Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.12
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    • pp.858-862
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    • 2013
  • The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

Effect of Surface Morphology in ZnO:Al/Ag Back Reflectors for Flexible Silicon Thin Film Solar Cells on Light Scattering Properties (플렉서블 실리콘 박막 태양전지용 ZnO:Al/Ag 후면반사막의 표면형상에 따른 광산란 특성 변화)

  • Beak, Sang-Hun;Lee, Jeong-Chul;Park, Sang-Hyun;Song, Jin-Soo;Yoon, Kyung-Hoon;Wang, Jin-Suk;Lee, Hi-Deok;Cho, Jun-Sik
    • Korean Journal of Materials Research
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    • v.20 no.10
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    • pp.501-507
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    • 2010
  • Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

ZnO-free Inverted Polymer Solar Cells Based on New Viologen Derivative as a Cathode Buffer Layer (ZnO를 대체 가능한 새로운 Viologen 유도체가 적용된 역구조 고분자 태양전지)

  • Kim, Youn Hwan;Kim, Dong Geun;Kim, Joo Hyun
    • Applied Chemistry for Engineering
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    • v.27 no.5
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    • pp.512-515
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    • 2016
  • A new viologen derivative namely 1,1'-bis(3,4-dihydroxybutyl)-[4,4'-bipyridine]-1,1'-diium bromide (V-Pr-2OH) was synthesized and applied as a cathode buffer layer to inverted polymer solar cells (PSCs) based on the blend of PTB7 : $PC_{71}BM$. PSCs with the structure of ITO/V-Pr-2OH/PTB7 : $PC_{71}BM/MoO_3/Ag$ as the cathode buffer layer showed the power conversion efficiency (PCE) up to 7.28%, which is comparable to that of the PSCs with the structure of ITO/ZnO/PTB7 : $PC_{71}BM/MoO_3/Ag$ (7.44%) in the absence of V-Pr-2OH. This study demonstrates that a highly efficient PSCs without any high temperature heat treatment can be obtained.

Optimization of GZO/Ag/GZO Multilayer Electrodes Obtained by Pulsed Laser Deposition at Room Temperature

  • Cheon, Eunyoung;Lee, Kyung-Ju;Song, Sang Woo;Kim, Hwan Sun;Cho, Dae Hee;Jang, Ji Hun;Moon, Byung Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.336.2-336.2
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    • 2014
  • Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

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Pre-validation of Colony Forming Efficiency Assay for Assessing the Cytotoxicity of Nanomaterials (나노물질의 세포독성 평가법으로 Colony Forming Efficiency Assay에 대한 검증연구)

  • Jo, Eunhye;Lee, Jaewoo;Park, Sun-Young;Kim, Pilje;Choi, Kyunghee;Eom, Igchun
    • Journal of Environmental Health Sciences
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    • v.41 no.1
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    • pp.17-23
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    • 2015
  • Objectives: The cytotoxcities of Au, Ag, SWCNT, $SiO_2$, and ZnO nanomaterials were evaluated in order to assess their potential toxicological effects in in vitro cell models using colony forming efficiency (CFE) assay. Methods: The CFE assay of the test materials was carried out on Hep G2 cells. The size distribution of nanomaterials was studied by transmission electron microscopy (TEM). Changes in cell viability after treatment with a toxicant will result in a decreased number of colonies formed in comparison to solvent. Results: The TEM images show that all the particles except SWCNT and ZnO can be considered approximately spherical. The gold and $SiO_2$ nanoparticles show no response (no toxicity) in concentration response experiments. A statistically significant toxic effect was found in Hep G2 cells treated with Ag, SWCNT and ZnO nanomaterials. Conclusion: In this study, we considered CFE assay to be a promising test for screening studies for cytotoxicity with physicochemical analysis.

Synthesis and Exploitation in Solar Cells of Hydrothermally Grown ZnO Nanorods Covered by ZnS Quantum Dots

  • Mehrabian, Masood;Afarideh, Hossein;Mirabbaszadeh, Kavoos;Lianshan, Li;Zhiyong, Tang
    • Journal of the Optical Society of Korea
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    • v.18 no.4
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    • pp.307-316
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    • 2014
  • Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

Influence of thermal annealing on hybrid Organic Solar Cell with ZnO nanowire

  • Park, Seong-Hwak;Kim, Jong-Hyeon;Jo, Jin-U;Kim, Seong-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.317-317
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    • 2010
  • ZnO나노와이어는 높은 투과도, 화학 및 열적 안정성을 가지며, 유기태양전지에 적용하였을 때 Active Layer의 표면적 증가, 전자의 수집 및 전달에 용이한 장점가지고 있어 하이브리드 유기 태양전지에 적용되고 있다. ZnO나노와이어와 P3HT/PCBM을 사용한 하이브리드 유기태양전지는 Active Layer의 열처리 온도를 변화시켜 ITO/AZO/ZnO wire/PCBM:P3HT/PEDOT:PSS/Ag구조로 제작되었다. ZnO나노와이어는 AZO를 Seed로 사용하고 Znc nitrate hydrate와 hexamethylenetetramine을 혼합하여 수열합성법으로 성장 후, P3HT:PCBM, PEDOT:PSS을 Spin Coating법으로 형성하였다. UV-vis와 Solar simulator를 통하여 Active Layer의 열처리 온도에 따른 태양전지의 특성을 분석하였다.

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Electrical and optical properties of back reflecting layer with AZO-Ag bilayer structure on a glass substrate for thin film Si solar cell applications (박막 Si태양전지 응용을 위한 유리기판 위의 AZO-Ag 이중구조 배면전극의 전기광학적 특성)

  • Park, Jaecheol;Hong, ChangWoo;Choi, YoungSung;Lee, JongHo;Kim, TaeWon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.124.2-124.2
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    • 2011
  • 현재 박막형 태양전지는 실리콘계가 주류를 이루고 있으며, 유리기판 또는 유연성 기판에 비정질 실리콘 박막을 형성시킨 태양전지와 실리콘 기판 양면에 태양전지를 형성하는 방법 등 효율을 극대화시킨 이종접합 태양전지 등이 연구되고 있다. 예컨대 밴드갭이 서로 다른 박막들 간의 이종접합을 이용한 tandem 구조 및 triple 구조의 Si 박막 태양전지의 경우 13%대 변환효율을 나타낸다고 보고된 바 있다. 본 연구에서는 비정질 Si 박막 태양전지 내 흡수층의 효율을 최대화하기 위하여 AZO/Ag 이중구조 박막의 특성에 관한 연구를 수행하고자 한다. combinatorial sputtering system을 이용하여 AZO/Ag 이중구조 박막을 제작하였으며 타겟으로는 4-inch target(Ag, 2wt% Al2O3 doped ZnO)이 사용되었다. 유리기판 상에 combinatorial sputter system으로 상온에서 제작된 Ag 박막의 두께는 25nm로 성장시켰으며 연속공정으로 AZO 박막을 제작하였고, AZO 박막은 100~500nm의 두께경사를 나타내었다. 이 때 유리기판상에 성장된 Ag/AZO 박막의 면저항은 약 $2{\Omega}/{\Box}$ 값을 나타내었다. 본 발표에서는 AZO/Ag 이중 구조 박막의 우수한 전기적 특성을 기반으로 표면 거칠기 및 반사도 특성 등에 관하여 추가적으로 토론한다.

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