• 제목/요약/키워드: Ag thickness

검색결과 448건 처리시간 0.036초

Ag 층을 도입한 ZnO 박막의 제작 (Preparation of Zinc Oxide thin film introducing Ag layer)

  • 김상모;임유승;금민종;손인환;장경욱;최형욱;김경환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1367-1368
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    • 2007
  • We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

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Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

  • Yu, Jiao Long;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제17권4호
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    • pp.201-203
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    • 2016
  • Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10−5 Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10−5 Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

Sn-3.5Ag 공정 솔더의 젖음특성 (The Wetting Property of Sn-3.5Ag Eutectic Solder)

  • 윤정원;이창배;서창제;정승부
    • Journal of Welding and Joining
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    • 제20권1호
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    • pp.91-96
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    • 2002
  • Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성 (Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell)

  • 최혁;구상모;조원주;이영희;정홍배
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Structure and Optical Properties of the Ca/Ag Double Layer for Transparent Cathode in TEOLED

  • Kim, Boo-Kyung;Moon, D.G.;Ahn, B.T.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1071-1074
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    • 2006
  • Ca/Ag double layer which is fabricated by thermal evaporation exists as the double layer of (Ca+O)/(Ag+Ca). In Ca layer, are crystalline Ca(OH)2 and amorphous Ca and in Ag layer, are crystalline Ag and amorphous Ca. And for the certain thickness of Ag, in the Ca/Ag double layer, the thicker Ca is, the higher transmittance is.

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UV meter용 패브리-페로 간섭필터 제작 및 광학특성연구 (The optical characteristic of Fabry-Perot interferometer filter for UV meter)

  • 박문찬;정부영;최혜정;진가헌;황보창권;김형두
    • 한국안광학회지
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    • 제9권2호
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    • pp.463-471
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    • 2004
  • 패브리-페로 형태의 UV용 투과필터를 광학용 설계 프로그램을 이용하여 설계한 후, 설계치를 근거로 하는 두개의 투과필터를 제작하여 광학적 특성을 조사하였다. 투과 영역의 투과율은 반사경으로 사용한 Ag 박막의 두께로 조절하였으며, 투과 파장을 spacer 층으로 사용된 $SiO_2$ 층의 두께로 조절하였다. 시료의 제작은 RF magnetron sputtering법을 이용하였으며, 제작 시료의 구조는 다음과 같다. [air|$SiO_2$(174.6 nm)|Ag(78 nm)|$SiO_2$(68 nm)|Ag(78 nm)|Cr(5 nm)|glass], [air|$SiO_2$(174.6 nm)|Ag(58 nm)|$SiO_2$(56 nm)|Ag(58 nm)|Cr(5 nm)|glass]. 제작한 LV용 투과필터의 광학적 특성은 분광광도계를 이용해서 측정하였다. UV용 투과필터에 의한 투과율은 약 370nm에서 6% 이였으며, 400 nm에서는 0.2% 이하이었다. Ag의 두께를 얇게 함에 따라 투과율을 증가시킬 수 있었으며, spacer 층으로 사용된 $SiO_2$ 층의 두께를 조철하여 투과영역을 조절할 수 있었다.

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전면 발광 유기 발광 소자용 반투명 금속의 전기적 및 광학적 특성 (Electrical and Optical Properties of Semitransparent Metal Electrodes for Top-emission Organic Light-emitting Diodes)

  • 신은철;안희철;김태완
    • 한국전기전자재료학회논문지
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    • 제21권10호
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    • pp.938-942
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    • 2008
  • Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

Polymer 기판상에 제작된 AZO/Ag/AZO 다층박막

  • 김상모;임유승;금민종;김경환
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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    • pp.207-210
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    • 2007
  • We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

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