• Title/Summary/Keyword: Ag thickness

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Preparation of Zinc Oxide thin film introducing Ag layer (Ag 층을 도입한 ZnO 박막의 제작)

  • Kim, Sang-Mo;Rim, You-Seung;Keum, Min-Jong;Son, In-Hwan;Jang, Kyung-Wook;Choi, Hyung-Wook;Kim, Kyung-Hwan
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1367-1368
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    • 2007
  • We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

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Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

  • Yu, Jiao Long;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.201-203
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    • 2016
  • Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10−5 Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10−5 Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

The Wetting Property of Sn-3.5Ag Eutectic Solder (Sn-3.5Ag 공정 솔더의 젖음특성)

  • 윤정원;이창배;서창제;정승부
    • Journal of Welding and Joining
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    • v.20 no.1
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    • pp.91-96
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    • 2002
  • Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell (Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성)

  • Choi, Hyuk;Koo, Sang-Mo;Cho, Won-Ju;Lee, Young-Hie;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Structure and Optical Properties of the Ca/Ag Double Layer for Transparent Cathode in TEOLED

  • Kim, Boo-Kyung;Moon, D.G.;Ahn, B.T.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1071-1074
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    • 2006
  • Ca/Ag double layer which is fabricated by thermal evaporation exists as the double layer of (Ca+O)/(Ag+Ca). In Ca layer, are crystalline Ca(OH)2 and amorphous Ca and in Ag layer, are crystalline Ag and amorphous Ca. And for the certain thickness of Ag, in the Ca/Ag double layer, the thicker Ca is, the higher transmittance is.

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The optical characteristic of Fabry-Perot interferometer filter for UV meter (UV meter용 패브리-페로 간섭필터 제작 및 광학특성연구)

  • Park, Moon-Chan;Jung, Boo-Young;Choi, Hae-Jung;Chen, Ko-Hsien;Hwangbo, Chang-Kwon;Kim, Hyung-Doo
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.2
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    • pp.463-471
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    • 2004
  • The Fabry-Perot interferometer filters for UV meter were designed using the design program of optical thin films. From the data obtained, two filters were fabricated. The transmittance of two filter were measured by spectrophotometer in order to analysis their optical property. The transmittance was controlled by the thickness of Ag reflector and the wavelength of the transmission was controlled by the thickness of $SiO_2$ spacer. The two UV filters were fabricated by the RF magnetron sputtering which are the multilayers of [air/$SiO_2$(174.6 nm)|Ag(78 nm)|$SiO_2$(68 nm)|Ag(78 nm)|Cr(5 nm)|glass] and [air/$SiO_2$(174.6 nm)|Ag(S8 nm)|$SiO_2$(56 nm)|Ag(58 nm)|Cr(S nm)|glass]. One filter has the maximum transmittance of 6% at the about 370nm and it has the transmittance of below 0.2% at 400nm. The other filter can be found that the transmittance is increased as the thickness of Ag is decreased and the wavelength of the transmission is controlled by the thickness of $SiO_2$ spacer layer.

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Electrical and Optical Properties of Semitransparent Metal Electrodes for Top-emission Organic Light-emitting Diodes (전면 발광 유기 발광 소자용 반투명 금속의 전기적 및 광학적 특성)

  • Shin, Eun-Chul;An, Hui-Chul;Kim, Tae-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.938-942
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    • 2008
  • Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

Polymer 기판상에 제작된 AZO/Ag/AZO 다층박막

  • Kim, Sang-Mo;Im, Yu-Seung;Geum, Min-Jong;Kim, Gyeong-Hwan
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.207-210
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    • 2007
  • We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

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