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http://dx.doi.org/10.4313/JKEM.2007.20.12.1022

Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell  

Choi, Hyuk (광운대학교 전자재료공학과)
Koo, Sang-Mo (광운대학교 전자재료공학과)
Cho, Won-Ju (광운대학교 전자재료공학과)
Lee, Young-Hie (광운대학교 전자재료공학과)
Chung, Hong-Bay (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.12, 2007 , pp. 1022-1026 More about this Journal
Abstract
We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.
Keywords
PMC(Programmable metallization cell); Chalcogenlde; Resistance change; Ag-doped;
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  • Reference
1 M. T. Kostyshin, E. V. Mikhailovskaya, and P. F. Romanenko, 'Photographic sensitivity effect in thin semiconducting films on metall substrates', Sov. Phys. (Solid State), Vol. 8, p. 451, 1966
2 J. Hajto, P. J. S. Ewen, R. E. Belford, and A. E. Owen, 'Interference grating fabrication in spin-coated $As_2S_3$ films', Thin Solid Films, Vol. 200, p. 229, 1991   DOI   ScienceOn
3 M. N. Kozicki, S. W. Hsia, A. E. Owen, and P. J. S. Ewen, 'Pass - a chalcogenide-based lithography scheme for I.C. fabrication', J. Non-Cryst. Solids, Vol. 137&138, p. 1341, 1991
4 G. Muller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, 'Status and outlook of emerging nonvolatile memory technologies', IEDM Technical Digest, p. 567, 2004
5 A. Pradel, G. Taillades, C. Cramer, and M. Ribes, 'Ion dynamics in superionic chalcogenide glasses studied in large frequency and temperature ranges', Solid State Ion., Vol. 105, p. 139, 1998   DOI   ScienceOn
6 M. N. Kozicki, M. Park, and M. Mitkova, 'Nanoscale memory elements based on solid state electrolytes', IEEE Trans. Nanotechnology, Vol. 4, No.3, p. 331, 2005   DOI   ScienceOn
7 R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, e. Pinnow, J. Robertson, and K. Ufert, 'Electrical characterization of solid state ionic memory elements', Proceedings of the 2003 Non-Volatile Memory Technology Symposium, p. 17-1-17-6, 2003
8 T. Kawaguchi, S. Maruno, and S. R. Elliott, 'Photoinduced surface deposition of metallic silver in Ag--- As---S glasses: effect of addition of other elements', J. Non-Cryst, Solids, Vol. 212, p. 166, 1997   DOI   ScienceOn
9 M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, 'Non-volatile memory based on solid electrolytes', Proceedings of the 2004 Non-Volatile Memory Technology Symposium, p. 10, 2004