• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.325-325
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• 2008

스크린 프린팅에 의한 압전 후막은 MEMS 공정을 이용하여 마이크로 펌프, 마이크로 벨브, 마이크로 센서, 마이크로 로봇 등 여러 초소형 기계부품에 응용되고 있으며, Sol-Gel, PLD를 이용해 증착된 막 등에 비해 수십${\mu}m$의 비교적 두꺼운 막을 형성시킬 수 있는 장점을 가지고 있다. 그러나 실리콘 기판을 사용하여 스크린 프린팅으로 형성된 압전 후막의 경우, 공정상 바인더를 연소시키는 과정을 거치게 되므로, 밀집된(Dense) 구조를 가지는 막을 만들기가 어렵다. 이로 인해 스크린 프린팅에 의한 후막은 전기적 특성 및 기계적 특성이 떨어지는 경향이 있다. 본 연구에서는 스크린 프린팅에 의한 압전 후막의 밀집된 구조 및 특성을 향상시키기 위해 0.01Pb$(Mg_{1/2}W_{1/2})$O3-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3$의 powder와 Attrition 밀링 처리된 powder를 비율별로 혼합하여 입자의 크기를 변화시켜 막의 충진 밀도를 향상시켰으며, 열처리 효과를 극대화시키기 위해 RTA(Rapidly Thermal Annealing)를 통해 열처리 하였다. Attrition 밀링에 의한 파우더를 각각 비율별로 100%, 50%, 25%로 혼합하여 만든 압전 세라믹 페이스트는 P-type(100)Si Wafer sample 위에 $1{\mu}m$의 하부전극용($1100^{\circ}C$) Ag 전극을 screen print하여 소결했다. 그리고 다시 전극이 형성된 Si wafer 위에 스크린 프린팅하고, 건조 한 후 RTA로 300초 동안 열처리 한 결과 밀집된 구조를 가지는 압전 후막을 제작 수 있었다.

• Economic and Environmental Geology
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• v.29 no.3
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• pp.257-267
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• 1996

One hundred of thirty volcanic rocks col1ected from the Jeju island， Jeongog， Guryongpo and other areas were analyzed for major elements and trace elements with Au by inductively coupled argon plasma and graphite furnace atomic absorptiom spectrometry. The Au content is the highest values (0.2~43.4 ppb, average; 10.34 ppb) from the Jeju island volcanic rocks and the lowest (0.5~11.0 ppb, average; 1.23 ppb) from the Guryongpo volcanic area. The content of Au tends to be higher in the Quarternary volcanic rocks than Tertiary or Cretaceous volcanic rocks. The Au content of the calc alkali volcanic rocks tends to increase from mafic to felsic volcanic rocks, but that of the alkalic volcanic rocks tends to increase from felsic to mafic volcanic rocks. The Au content of the volcanic rocks collected from the Jeju island shows the highest values in the feldspar olivine basalts. Elements or oxides which have positive or negative correlations with Au are Ag, Mo, Rb, V, Y, $K_2O$, MgO and $SiO_2$, but other elements analyzed are not shown correlations with Au. It has a tendency to show that samples from the Jeju with 5 ppb gold and more are plotted in the non-Dupal area and those with less than 5 ppb gold in the Dupal area, while those from the Jeongog with 5 ppb gold and more are plotted in the Dupal area and those with less than 5 ppb gold in the non-Dupal area, in the Ba/Nb-La/Nb, Zr/Nb-Ba/Nb diagrams. It shows that samples from the Jeju and Guryongpo with high gold content are plotted in the within-plate, while those with low gold content are plotted in the arc-related area, and those from the Jeongog are scattered in the $TiO_2-Al_2O_3$, $Zr/A1_2O_3-TiO_2/Al_2O_3$ diagrams.

• Bulletin of the Korean Chemical Society
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• v.9 no.5
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• pp.292-295
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• 1988

Macrocyclic ligands have been studies as cation carriers in a bulk liquid membrane system. $Cu^{2+}$ has been transported using nitrogen substituted macrocycles as carriers and several transition metal ions($M^{n+}\;=\;Mn^{2+},\;Co^{2+},\;Ni^{2+},\;Cd^{2+},\;Pb^{2+}\;and\;Ag^{+}$) have been transported using $DBN_3O_2,\;DBN_2O_2,\;Me_6N_414C4$ and DA18C6 as carriers in a bulk liquid membrane system. Competitive $Cu^{2+}-M2^+$ transport studies have also been carried out for the same system. In single cation transport experiments, the best macrocyclic ligand for transport is a ligand that gives a moderately stable rather than very stable complex in the extraction. However, when both cations are present in the source phase, the cation which forms the most stable complex with carrier is favored in transport over other cations. Generally, the nitrogen substiituted macrocycles transport $Cu^{2+}$ selectively over $Mn^+$. Ligand structure, equilibrium constant (or stability constant) for complex formation, source phase pH and carrier concentration are also important parameters in transport experiments.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

• Economic and Environmental Geology
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• v.34 no.1
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• pp.39-53
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• 2001

Environmental pollution of the Tohyun mine creek area was investigated on the basis of geology, mineralogy and geochemistry. In soils and sediments of the mine area, ${Al_2}{O_3}/{Na_2O}$ and ${K_2}O/{Na_2}O$ ratios are partly negative correlation against ${SiO_2}/{Al_2}{O_3}$, respectively. Geochemical characteristics of some trace and rare earth elements such as V/Ni, Ni/Co, La/Ce, Th/Yb, Th/U, La/Th, ${La_N}/{Yb_N}$, La/Sc and Sc/Th are revealed a narrow range and homogeneous compositions may be explained by simple source lithology. These results suggest that sediments source of the host shale around the mine area could be originated by basic to intermediate igneous rocks. Mineral compositions of soil and sediment near the mine area were partly variable mineralogy, which are composed of quartz, mica, feldspar, chlorite, clay minerals and some pyrite. Soils and sediments with highly concentrated heavy minerals, gravity separated mineralogy, are composed of some pyrite, arsenopyrite, chalcopyrite, sphalerite, galena, goethite and various kinds of hydroxide minerals on the polished sections. As normalized by bed rock composition, average enrichment indices of major elements in sediments, precipitates, farmland soils and paddy soils are 1.0, 1.7, 0.9 and 0.8, respectively. Maximum concentration of environmental toxic elements in the mine creek are detected with Ag = 186 ppm, As = 17,100 ppm, Bi = ]27 ppm, Cd = 77 ppm, Cu = 12,299 ppm, Pb = 8,897 ppm, Sb = 1,350 ppm, W = 599 ppm and Zn = 12,250 ppm, which are increasing with total FeO increasing, and extremely high concentrations of surface sediments and precipitates near the waste rock dump. These toxic elements (As, Bi, Cd, Cu, Pb, Sb, W and Zn) of the samples, normalizing by host rock concentration, revealed that average enrichment index is 106.0 for sediments, 279.6 for precipitates, 3.5 for farmland soils and 1.6 for paddy soils. However, on the basis of EPA values, enrichment indices of all the samples are 40.7, 121.4, 1.3 and 0.6, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.315-315
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• 2016

The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.9-17
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• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1541-1543
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• 1999

Screen printing에 의해 압전 후막을 제조하기 위하여 약 $0.6{\mu}m$의 평균 입자 크기를 갖는 PMN-PZT와 PAN-PZT 분말을 산화물 혼합법에 의해 제조하였다. 치밀한 후막의 제조를 위한 분말과 유기물의 비율은 분산이 가능한 범위에서 80:20 (분말:유기물)의 중량비를 나타내었다 사용된 기판과 하부전극은 각각 $SiO_2$/Si와 AgPd 였으며, 후막 제조시 박리 및 균열현상은 발생되지 않았다. 프린트된 후막은 건조온도와 무관한 미세구조를 나타내었으며, 보다 치밀한 구조를 갖는 후막의 제조를 이해 입자의 분산 및 열처리 조건 그리고 기판과의 매칭에 대해 연구가 계속되어야 할 것으로 생각된다.