• ETRI Journal
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• v.31 no.6
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• pp.778-783
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• 2009

To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional $SiN_x$ layer under conventional photoresists. By patterning a photoresist and over-etching the $SiN_x$, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.31-34
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• 2016

System In Package (SiP) is getting popular and momentum for the recent wearable, IoT and connectivity application apart from mobile phone. This is driven by market demands of cost competitive, lighter and smaller/thinner and higher performance. As one of many semiconducting assembly products, Leadframe product has been widely used for low cost solution, light/ small and thin form factor. But It has not been applied for SiP although Leadframe product has many advantages in cost, size and reliability performance. SiP is mostly based on laminate substrate and technically difficult on Leadframe substrate because of a limitation in SMT performance. In this paper, Leadframe based SiP product has been evaluated about key technical challenges in SMT performance and electrical shield technology. Mostly Leadframe is considered not available to apply EMI shield because of tie-bar around package edge. In order to overcome two major challenges, connection bars were deployed properly for SMT pad to pad and additional back-side etching was implemented after molding process to achieve electrical isolation from outer shield coating. This product was confirmed assembly workability as well as reliability.

• Tribology and Lubricants
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• v.37 no.5
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• pp.189-194
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• 2021

A straightforward, yet effective surface modification method of stainless steel mesh and its interesting anti-wetting characteristics are reported in this study. The stainless steel mesh is electrochemically etched, and the specimen has both micro and nano-scale structures on its surface. This process transforms the two types of mesh specimens known as the regular and dense specimens into hydrophobic specimens without applying any hydrophobic chemical coating process. The fundamental wettability of the modified mesh is analyzed through a dedicatedly designed experiment to investigate the waterproof characteristics, for instance, the penetration threshold. The waterproof characteristics are evaluated in a manner that the modified mesh resists as high as approximately 2.7 times the pressure compared with the bare mesh, i.e., the non-modified mesh. The results show that the penetration threshold depends primarily on the advancing contact angles, and the penetration stop behaviors are affected by the contact angle hysteresis on the surfaces. The findings further confirm that the inexpensive waterproof meshes created using the proposed straightforward electrochemical etching process are effective and can be adapted along with appropriate designs for various practical applications, such as underwater devices, passive valves, and transducers. In general, , additional chemical coatings are applied using hydrophobic materials on the surfaces for the applications that require water-repelling capabilities. Although these chemical coatings can often cause aging, the process proposed in this study is not only cost-effective, but also durable implying that it does not lose its waterproof properties over time.

• Membrane Journal
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• v.33 no.3
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• pp.110-126
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• 2023

In this review, the approaches, properties, and elements involved in the formation of polymeric membranes for various materials are discussed. The present research emphasizes the proficiency in several membrane formation processes such phase inversion, interfacial polymerization, stretching, track etching, and electrospinning. Additionally, the obstacles and applicability of various application manufacturing processes are addressed. Various polymeric membranes are reviewed with regard to significant surface properties such as surface roughness, surface tension, surface charge and surface functional group. Additional enhancements of popular membrane formation processes like phase inversion and interfacial polymerization are required to ensure advancements in membrane efficiency. Analysing the possibilities of modern manufacturing practices like track etching and electrospinning is also crucial.

• Restorative Dentistry and Endodontics
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• v.34 no.5
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• pp.397-405
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• 2009

This study compared the effect of an activator, intermediate bonding resin and low-viscosity flowable resin on the microtensile bond strength of a self-curing composite resin used with two-step total etching adhesives. Twenty extracted permanent molars were used. The teeth were assigned randomly to nine groups (n=10) according to the adhesive system and application of additional methods (activator, intermediate adhesive, flowable resin). The bonding agents and additional applications of each group were applied to the dentin surfaces. Self-curing composite resin buildups were made for each tooth to form a core, 5mm in height. The restored teeth were then stored in distilled water at room temperature for 24h before sectioning. The microtensile bond strength of all specimens was examined. The data was analyzed statistically by one-way ANOVA and a Scheffe's test. The application of an intermediate bonding resin (Optibond FL adhesive) and low-viscosity flowable resin (Tetric N-flow) produced higher bond strength than that with the activator in all groups. Regardless of the method selected, Optibond solo plus produced the lowest ${\mu}TBS$ to dentin. The failure modes of the tested dentin bonding agents were mostly adhesive failure but there were some cases showed cohesive failure in the resin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.8-14
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• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.