• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.5
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• pp.31-37
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• 2009

In the two-way relay channel, the relay employ Amplify-and-Forward (AF) or Decode-and-Forward (DF) protocol, and broadcast the network-coded signal to both user. In the system, DF protocol provides maximum throughput at low signal to noise ratio(SNR). On the other hand, at high SNR, AF protocol provides maximum throughput. The paper propose active transmission scheme which employ Amplify-and-Forward or Decode-and-Forward protocol based on received SNR at the relay over Two-way relay channel. The optimal threshold is investigated numerically for switching the protocol. Through numerical results, we confirm that the proposed scheme outperforms conventional schemes over two-way relay channel.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1289-1291
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• 1993

The hydrogenation effects on characteristics of polycrystalline silicon thin film transistors(poly-Si TFT's) of which the channel length varies from $2.5{\mu}m\;to\;20{\mu}m$ and poly-Si layer thickness is 50, 100, and 150 nm was investigated. After 1 hr hydrogenation annealing by PECVD, the threshold voltage shift decreased dependent on the channel length, but channel width may not alter the threshold voltage shift. In addition to channel length, the active poly-Si layer thickness may be an important parameter on hydrogenation effects, while gate poly-Si thickness may do not influence on the characteristics of TFT's. Considering our experimental results, we propose that channel length and active poly-Si layer thickness may be a key parameters of hydrogenation of poly-Si TFT's.

• Journal of Ginseng Research
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• v.29 no.1
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• pp.19-26
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• 2005

The last two decades have shown a marked expansion in publications of diverse effects of Panax ginseng. Ginsenosides, as active ingredients of Panax ginseng, are saponins found in only ginseng. Recently, a line of evidences shows that ginsenosides regulate various types of ion channel activity such as $Ca^{2+},\;K^+,\;Na^+,\;Cl^-$, or ligand gated ion channels (i.e. $5-HT_3$, nicotinic acetylcholine, or NMDA receptor) in neuronal, non-neuronal cells, and heterologously expressed cells. Ginsenosides inhibit voltage-dependent $Ca^{2+},\;K^+,\;and\;Na^+$ channels, whereas ginsenosides activate $Ca^{2+}-activated\;Cl^-\;and\;Ca^{2+}-activated\;K^+$ channels. Ginsenosides also inhibit excitatory ligand-gated ion channels such as $5-HT_3$, nicotinic acetylcholine, and NMDA receptors. This review will introduce recent findings on the ginsenoside-induced differential regulations of ion channel activities and will further expand the possibilities how these ginsenoside-induced ion channel regulations are coupled to biological effects of Panax ginseng.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.415-418
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• 2015

In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.

• ETRI Journal
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• v.32 no.5
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• pp.831-834
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• 2010

This paper proposes a new joint channel coding algorithm based on principal component analysis. A conventional joint channel coder using passive downmixing undergoes a reduction of both the primary-to-ambient energy ratio (PAR) of the downmix signal and the panning gain ratio of the primary source. The proposed system preserves the PAR of the downmix signal by using active downmixing which reflects spatial characteristic. The proposed system also improves the accuracy of the panning gain ratio estimation. Computer simulations and subjective listening tests verify the performance of the proposed system.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.158.5-158
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• 2001

Monopulse active homing radar requires velocity and angle information of target to track fast moving target. Target velocity can be estimated by measuring the frequency shift between transmitted and received frequencies. Angle information is obtained by measuring boresight error. Measurement of doppler frequency component in received signal is done through FFT analysis and interpolation algorithm for fine tuning. Boresight errors in azimuth and elevation axes are proportional to the power of each difference channel relative to sum channel. The target signal power in difference channel is estimated more precisely by measuring the power of FFT result cell of maximum ...

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.