• 전기학회논문지
• /
• 제56권10호
• /
• pp.1807-1813
• /
• 2007

This paper deals with extending the variable natural oscillation frequency range of an active integrated FET oscillator. In this paper, we conform experimentally that the variable range of the natural oscillation frequency is expanded about three times in the oscillator controlled by the varactor diode. When the frequency difference is given to the oscillators in the two element antenna system, phase difference appeared between the oscillators. The 2-, 3-, 4-, 5-element patch antenna arrays are composed for the beam scanning experiments. All the above patch antennas show good phased array characteristics. The range of the scanning angle is about $30^{\circ}$, and the radiation power is gradually increased from $50{\mu}W\;to\;200{\mu}W$. The radiation patterns we sharpened as the number of elements is increased.

• 한국통신학회논문지
• /
• 제21권3호
• /
• pp.763-770
• /
• 1996

In this paper, the Single-stage Transmission type Injectiong-Locked Oscillator(STILO) was designed and fabicated for the Active Integrated Phased Array Antenna(AIPAA) system. The STILO, which was designed and fabricated by injection-locked technique and hair-pin resonator, has the same 210MHz frequency tuning range of the Voltage Controlled Oscillator(VCO) used by varactor. The locking bandwidth of STILO with 11.5MHz bandwidth, is much better than that of the Injection-Locked Dielectric Resonator Oscillator(ILDRO), And the STILO has the improved noise characteristics in AM, FM, and PM. This STILO is useful for the AIPAA, the coupled VCO array, an the MMIC structure.

• 산업기술연구
• /
• 제11권
• /
• pp.43-53
• /
• 1991

Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

• 한국위성정보통신학회논문지
• /
• 제1권1호
• /
• pp.54-58
• /
• 2006

동작주파수를 쉽게 조절할 수 있는 신호생성용 안테나 (Antenna-Integrated Oscillator) 설계방법을 소개한다. 제안하는 회로는 광대역에서 부성저항을 갖는 능동회로 (Negative-Resistance Circuit)와 패치안테나로 구분되며, 오실레이터의 동작주파수는 안테나의 공진 주파수로 결정된다. 이러한 디자인 방법은 안테나와 오실레이터의 동작주파수 불일치로 인한 출력파워의 감소 가능성을 줄일 수 있다. 또, 제안하는 설계방법에서 안테나의 Feed 지점과 Feed 라인의 길이를 조절하여 최적의 출력파워를 낼 수 있음을 Load-Pull 시뮬레이션으로 확인하였다. C-band, X-band 회로를 각각 제작, 측정하였고 이를 통하여 설계방법의 타당성을 증명하였다.

• Journal of electromagnetic engineering and science
• /
• 제15권4호
• /
• pp.232-238
• /
• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
• /
• pp.234-238
• /
• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
• /
• pp.32-36
• /
• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• 한국통신학회논문지
• /
• 제22권8호
• /
• pp.1622-1631
• /
• 1997

A 3-stages Active Microstrip Phased Array Antenn(AMPAA) is implemented using Injection-Locking Coupled Oscillators(ILCO). The AMPAA is a beam scanning active antenna with capability of electrical scanning by frequency varation of ILCO. The synchronization of resonance frequencies in array elements is occured by ILCO, and the ILCO amplifies the injection signal and functions as a phase shifter. The microstrip ptch is operated as a radiation element. The unilateral amplifier is a mutual coupling element of AMPAA, eliminates the reverse locking signal and controls the locking bandwidth of ILCO. The possibility of Monolithic Microwave Integrated Circuits(MMIC) of T/R module is proposed by simplified and integrated fabrication process of AMPAA. The 0.75.$lambda_{0}$ is fixed for a mutual coupling space to wide the scanning angle and minimize the multi-mode. The AMPAA has beam scanning angle of 31.4.deg., HPBW(Half Power Beam Widths) of 26.deg., directive gain of 13.64dB and side lobe of -16.5dB were measured, respectively.

• 전자공학회논문지A
• /
• 제33A권2호
• /
• pp.78-86
• /
• 1996

Solid-state devices can be directly integrated with a planar antenna to form active antenna elements. In this paper, the voltage controlled oscillator (VCO) is designed and fabricated at 2.4 to 2.5 GHz using a microstrip patch antenna. A varactor diode is used as avariable reactance. The predicted frequency tuning range of the VCO is 2.448 to 2.498 GHz in the design procedure and the fabricated VCO has 2.446 to 2.498 GHz frequency tuning range when the varactor tuning voltage is varied from 0 to 11V. Transmitted power output of the patch antenna which serves both as a rsonator and a radiating element for VCO is about 18 mW over this tuning range.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 추계종합학술대회 논문집
• /
• pp.283-286
• /
• 1999

A 2㎓, low noise, low power CMOS voltage-controlled oscillator (VCO) with an integrated LC resonator is presented. The design of VCO relies heavily on the on-chip spiral inductor. An optimized spiral inductor with Q-factor of nearly 8 is achieved and used for the VCO. The simulated result of phase noise is as low as -l14 ㏈c/Hz at an offset frequency of a 600KHz from a 2㎓ carrier frequency. The VCO is tuned with standard available junction capacitors, resulting in an about 400MHz tuning range (20%). Implemented in a five-metal 0.25${\mu}{\textrm}{m}$ standard CMOS process, the VCO consumes only 2㎽ from a single 2.5V supply. It occupies an active area of 620${\mu}{\textrm}{m}$$\times$720${\mu}{\textrm}{m}$.