• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.276-276
• /
• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Journal of Information Display
• /
• 제10권4호
• /
• pp.137-142
• /
• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• 전기학회논문지
• /
• 제59권9호
• /
• pp.1615-1620
• /
• 2010

A thin film thermoelectric cooler for COB direct assembly was proposed and the COB cooler structure was modeled by electrical equivalent circuit by using SPICE model of thermoelectric devices. The embedded cooler attached between the die chip and metal plate can offer the possibility of thin film active cooling for the COB direct assembly. We proposed a driving method of TEC by using pulse width modulation technique. The optimum power to the TEC is simulated by using a SPICE model of thermoelectric device and passive components representing thermal resistance and capacitance. The measured and simulated results offer the possibility of thin film active cooling for the COB direct assembly.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.36-39
• /
• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Tribology and Lubricants
• /
• 제15권4호
• /
• pp.304-313
• /
• 1999

High-speed rotors set a lot of high vibration and stability problems especially when the speed of rotation is going through the first or the second critical speed. The aim of this paper is to investigate the possibility of an active control of a rigid rotor with squeeze film damper which has a good configuration of easily controlled end seal clearances and/or adjustment of a feed pressure. A theoretical method is presented and some numerical results are compared with test measurements. Both results show that the vibration or bit sizes are decreased when the end seal gap decreases with constant supply pressure, and when the supply oil pressure increases with constant seal gap. The experimental results show also a pleasing similarity on both orbit sizes and their decrement ratio compared with theoretical analysis. The possibility of an active control with the squeeze film damper was verified by adjusting the seal gap and the supply pressure.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권1호
• /
• pp.26-29
• /
• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2007년도 춘계학술대회논문집
• /
• pp.943-946
• /
• 2007

In-plane piezoelectric charge constant of Electro-Active paper (EAPap) was investigated based on direct and converse piezoelectric effects. EAPap samples were made with cellulose film with very thin gold electrode coated on both sides of the film. To characterize direct piezoelectricity of EAPap, induced charge was measured when mechanical stress was applied to EAPap. In-plane piezoelectric charge constant was extracted from the relation between induced charge and applied in-plane normal stress. To investigate converse piezoelectricity, induced in-plane strain was measured when electric field was applied to EAPap. Piezoelectric charge constant was also extracted from the relation of induced in-plane strain and applied electric field. Piezoelectric charge constants obtained from direct and converse piezoelectricity are 31 pC/N and 178 x 10-12m/V for 45 degree sample, respectively. Measured piezoelectric charge constants of EAPap provide promising potential as a piezoelectric material.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.32.1-32.1
• /
• 2007

• 한국전기전자재료학회논문지
• /
• 제30권8호
• /
• pp.474-478
• /
• 2017

We report on thin-film transistors based on $TiO_x$ pre-annealed by femtosecond laser pulses. A 30-nm thick $TiO_x$ active channel layer was initially deposited by an ALD system. The $TiO_x$ semiconducting films were annealed by irradiation with a femtosecond laser (power: $3W/cm^2$) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a $TiO_x$ film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the $TiO_x$ films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the $TiO_x$ surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with $TiO_x$ active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ${\sim}10^3$.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2006년도 춘계학술대회
• /
• pp.228-231
• /
• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.