• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.108-110
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• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.105.1-105
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• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.196-199
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• 2007

In this paper, we studied a ZnO-based film bulk acoustic wave resonator (FBAR) device fabricated on top of a novel multi-layered Bragg reflector with chromium adhesion layers $(0.03{\mu}m-thick)$ inserted. The performance of FBAR device could be significantly improved using proper thermal treatments. At ${\sim}2.75$ GHz, we could achieve good return loss and quality factor (Q). This device fabrication technique will be useful for the future mobile WiMAX applications.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.129-132
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.34-37
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• 2008

Effects of the addition of Cr adhesion layer to $W/SiO_2$ multilayer Bragg reflectors on the resonance characteristics of film bulk acoustic wave resonator (FBAR) devices are presented. Main resonance peaks could be significantly shifted to higher frequency, mainly due to the addition of Cr adhesion layer to multilayer Bragg reflectors and control of the bottom electrode thickness as well. The FBAR devices with the Cr adhesion layer in Bragg reflectors could result in much more improved resonance characteristics at about 3 GHz in terms of return loss and Q-factor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.41-54
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• 2002

In this study, we have analyzed the effects of the membrane layer and the bragg reflector layers on the resonance characteristics through comparing the characteristics of the membrane type FBAR (Film Bulk Acoustic Wave Resonator) and the one type bragg reflector layers with those of the ideal FBAR with top and bottom electrode contacting air by using equivalent circuit technique. It is assumed that ZnO is used for piezoelectric film, $SiO_2$ are used for membrane layer and low acoustic impedance layer, W are used for the high acoustic reflector layer and Al is used for the electrode. Each layer is considered to have a acoustic propagation loss. ABCD parameters are picked out and input impedance is calculated by converting 1-port equivalent circuit to simplified equivalent circuit that ABCD parameters are picked out possible. From the variation of resonance frequency due to the change of thickness of electrode layers, reflector layers and membrane layer it is confirmed that membrane layer and the reflector layer just under the electrode have the greatest effect on the variation of resonance frequency. From the variation of resonance properties, K and electrical Q with the number of layers, K is not much affected by the number of layers but electrical Q increases with the number of layers when the number of layers is less than seven. The electrical Q is saturated when the number of layers is large than six. The electrical Q is dependent of mechanical Q of reflector layers and membrane layer. Both ladder filter and SCF (Stacked Crystal Filters) show higher insertion loss and out-of-band rejection with the increase of the number of resonators. The insertion loss decreases with the increase of the number of reflector layers but the bandwidth is not much affected by the number of reflector layers. Ladder Filter and SCF with membrane layer show the spurious response due to spurious resonance properties. Ladder filter shows better skirt-selectivity characteristics in bandwidth but SCF shows better characteristics in insertion loss.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.376-380
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S$_{11}$) and quality factor (Q$_{s/p}$). These thermal techniques seem very promising for enhancing FBAR resonance performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.311-315
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• 2005

In this paper, we emphasize the advantage of thermal annealing treatments for improvement characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on multi-layer thin films, namely, Bragg reflectors. Sintering and/or annealing processes were applied in our experiments. The measurements confirm once again a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p})$. these thermal treatment techniques are really promising for enhancing performance of FBAR resonators in industry fabrication of RF devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.9-18
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• 2003

Two configurations of Film Bulk Acoustic Wave Resonators with acoustic quater-wave bragg reflector layers are theoretically analyzed using equivalent circuits and the difference of their characteristics are discussed. We compare the characteristics of λ/2 mode to those of ideal FBAR with top and bottom electrode contacting air and the characteristics of λ/4 mode to those of ideal FBAR with top electrode contacting air and bottom electrode clamped. We assume that the piezoelectric film is ZnO, the electrode is A1 and the substrate is Si, ABCD parameters are extracted and input impedance is calculated by converting the equivalent circuit from Mason equivalent circuits to the simplified equivalent circuits that ABCD parameters are extracted possible, From the variation of resonance frequency due to the change of thickness of reflector layers and the variation of electrical Q due to the change of mechanical Q of reflector layers, it is confirmed that the reflector layer just under the bottom electrode have the greatest effect on the varation of resonance frequency and electrical Q. It is shown that the number of reflector layers required for the saturation of electrical Q decreases with the increase of the impedance ratio of reflector layers and electrical Q of λ/2 mode is larger than that of λ/4 mode, Electromechanical coupling factor is independent of the number of layers, The impedance ratio of reflector layers becomes larger as the electromechanical coupling factor becomes larger, The electromechanical coupling factor of the two mode are smaller than those of ideal FBARs because of the trapping of acoustic energy in the reflector layers, The insertion loss of the ladder filter decreases with the increase of the number of reflector layers but the bandwidth is not affected much by the number of reflector layers, As the impedance ratio of reflector layers becomes larger the insertion loss becomes smaller and the bandwidth becomes wider, In our analysis of the two mode, characteristics of λ/2 mode appear to be slightly more favorable than that of λ/4 mode