Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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The Improvements of FBAR Devices performances by Thermal Annealing Methods

  • Mai, Linh (School of Engineering, Information and Communications University) ;
  • Song, Hae-Il (School of Engineering, Information and Communications University) ;
  • Le, Minh-Tuan (School of Engineering, Information and Communications University) ;
  • Pham, Van-Su (School of Engineering, Information and Communications University) ;
  • Yoon, Gi-Wan (School of Engineering, Information and Communications University)
  • Published : 2005.10.28
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Abstract

In this paper, we emphasize the advantage of thermal annealing treatments for improvement characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on multi-layer thin films, namely, Bragg reflectors. Sintering and/or annealing processes were applied in our experiments. The measurements confirm once again a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p})$. these thermal treatment techniques are really promising for enhancing performance of FBAR resonators in industry fabrication of RF devices.

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