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Cobalt (Co) Electrode FBAR Devices Fabricated on Seven-Layered Bragg Reflectors and Their Resonance Characteristics  

Mai Linh (Communication and Electronics Lab (CEL), Information and Communication and Electronics Lab (CEL))
Yim, Mun-Hyuk (CEL, IC)
Yoon, Gi-Wan (IC)
Kim, Dong-Hyun (Communication and Electronics Lab (CEL), Information and Communication and Electronics Lab (CEL))
Publication Information
Journal of information and communication convergence engineering / v.1, no.3, 2003 , pp. 129-132 More about this Journal
Abstract
In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).
Keywords
film bulk acoustic wave resonator (FBAR); microwave monolithic integrated circuits (MMICs); X-ray diffractometer (XRD); photoresist (PR); Bragg reflector;
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