• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.710-712
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• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Journal of Magnetics
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• 제21권4호
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• pp.491-495
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• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2021년도 봄 학술논문 발표대회
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• pp.112-113
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• 2021

Phosphate based inhibitor is playing a decisive role in inhibiting the corrosion of steel rebar in chloride condition. We have used different amount of ammonium phosphate monobasic (APMB) as corrosion inhibitor in mortar with different amount of chloride ions. The compressive strength, flexural strength, open circuit potential (OCP), electrochemical impedance spectroscopy (EIS), potentiodynamic polarization resistance (PPR), scanning electron microscopy (SEM) and Raman spectroscopy were performed to access the effect of inhibitor on corrosion resistance. As the amount of inhibitor is increased, the compressive strength increased. The electrochemical results show that as the amount of inhibitor and chloride ions are increased, the total impedance and corrosion resistance of steel rebar increased attributed to the formation of the stable oxide films onto the steel rebar surface. It is suggested that APMB can work in high concentration of chloride ions present in concrete where phosphate ion helps in formation of stable and protective phosphate based oxide film.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.105-113
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• 2004

MRAM (Magneto-resistive Random Access Memory)은 자성체의 스핀 방향을 정보원으로 하는 비휘발성 메모리로 magneto-resistance 물질을 정보 저장 소자로 사용한다. 본 논문에서는 MRAM 시뮬레이션시 MTJ (Magnetic Tunneling Junction)의 hysteretic 특성, asteroid 특성, R-V 특성을 HSPICE에서 재현할 수 있는 새로운 macro-model을 제안하고 HSPICE에 적용하여 그 정확도를 검증하였다. 또한 종래의 reference cell 회로에 비하여 정확한 중간 저항 값을 유지하는 새로운 reference cell 회로를 제안하고 이를 본 논문에서 제안한 macro-model을 이용하여 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.257-257
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• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

• 한국건축시공학회지
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• 제22권6호
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• pp.673-680
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• 2022

모듈러 건축은 시공 기간의 단축, 건축비용 절감 등의 여러 가지 장점에도 불구하고 국내 건설시장에서 좀처럼 탄력을 받지 못하고 있다. 이러한 원인에는 모듈러 내화 기술 적용의 한계도 있으나 무엇보다 내화구조 제도에 대한 접근성이 쉽지 않은 것이 주요 요인으로 간주되고 있다. 따라서 모듈러 건축 활성화를 위해 주요 저해요인인 내화구조 제도 현황과 문제점에 대해 고찰하였으며, 내화구조 제도적 개선 및 연구개발 방향에 대해 제시하고자 한다.

• Journal of Magnetics
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• 제7권3호
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Restorative Dentistry and Endodontics
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• 제39권4호
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• pp.270-275
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• 2014

Objectives: This study compared the mechanical properties of various instruments for canal exploration and glide-path preparations. Materials and Methods: The buckling resistance, bending stiffness, ultimate torsional strength, and fracture angle under torsional load were compared for C+ file (CP, Dentsply Maillefer), M access K-file (MA, Dentsply Maillefer), Mani K-file (MN, Mani), and NiTiFlex K-file (NT, Dentsply Maillefer). The files of ISO size #15 and a shaft length of 25 mm were selected. For measuring buckling resistance (n = 10), the files were loaded in the axial direction of the shaft, and the maximum load was measured during the files' deflection. The files (n = 10) were fixed at 3 mm from the tip and then bent $45^{\circ}$ with respect to their long axis, while the bending force was recorded by a load cell. For measuring the torsional properties, the files (n = 10) were also fixed at 3 mm, and clockwise rotations (2 rpm) were applied to the files in a straight state. The torsional load and the distortion angle were recorded until the files succumbed to the torque. Results: The CP was shown to require the highest load to buckle and bend the files, and the NT showed the least. While MA and MN showed similar buckling resistances, MN showed higher bending stiffness than MA. The NT had the lowest bending stiffness and ultimate torsional strength (p < 0.05). Conclusions: The tested instruments showed different mechanical properties depending on the evaluated parameters. CP and NT files were revealed to be the stiffest and the most flexible instruments, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.478-478
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• 2013

Resistance-change Random Access Memory (ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics.

• 대한기계학회논문집A
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• 제23권7호
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• pp.1231-1237
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• 1999

Applying the conjugate contact condition, contact lines of a cylindrical worm gear has been calculated. The characteristics of tooth contact were analyzed and the pitting resistance were also assessed. It has been verified that: i) the length of contact is shortest on the 1st tooth of the front region, ii) the contact region is more narrow in the recess side than in the access side, iii) the contact region is more narrow in worm than in worm wheel. Hence, the pitting resistance is weakest in the recess side of the 1st contacting worm tooth.