• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 추계총회 및 학술발표회
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• pp.27-27
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• 2000

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국건축시공학회지
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• 제11권1호
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• pp.83-90
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• 2011

The purpose of this research is to investigate the effect of AFm formation on the stiffening process of cement paste. High and low alkali sulfate clinkers were used for the experiments. The flow and stiffening behavior of cement paste was investigated using modified ASTM C403 penetration resistance test and oscillatory shear rheology. X-ray powder diffraction (XRD) was used for phase identification associated with stiffening of the paste. It was found from the results that low alkali clinker mixture produced very strong premature stiffening whereas high alkali clinker mixture did not cause premature stiffening. This is because of the large amount of alkali sulfate present in the clinker. Addition of calcium and sodium chloride to the high alkali clinker mixture caused faster stiffening and set.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.236-237
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• 2005

To measure surface roughness and smoothness of semiconducting materials in power cable, we have investigated the formation and growth process of carbon black showed by changing the content of carbon black. The specimens were primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive carbon black were the variable, and their contents were 20, 30 and 40[wt%], respectively. The surface roughness and smoothness of specimens were measured by SEM and AFM. From SEM experimental result, carbon black in specimens formed matrix as a particles. Also we showed growth process of carbon black according to an increment of the content of carbon black. From AFM experimental result, surface roughness of specimens decreased according to an increment of the content of carbon black.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.627-628
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.268-271
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• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• Journal of Periodontal and Implant Science
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• 제48권6호
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• pp.373-382
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• 2018

Purpose: The aim of this study was to evaluate the effects of various prophylactic treatments of titanium implants on bacterial biofilm formation, correlating surface modifications with the biofilms produced by Pseudomonas aeruginosa PAO1, Staphylococcus aureus, and bacteria isolated from saliva. Methods: Pure titanium disks were treated with various prophylactic procedures, and atomic force microscopy (AFM) was used to determine the degree to which surface roughness was modified. To evaluate antibiofilm activity, we used P. aeruginosa PAO1, S. aureus, and saliva-isolated Streptococcus spp., Bacteroides fragilis, and Staphylococcus epidermidis. Results: AFM showed that the surface roughness increased after using the air-polishing device and ultrasonic scaler, while a significant reduction was observed after using a curette or polishing with Detartrine ZTM (DZ) abrasive paste. In addition, we only observed a significant (P<0.01) reduction in biofilm formation on the DZ-treated implant surfaces. Conclusion: In this study, both AFM and antibiofilm analyses indicated that using DZ abrasive paste could be considered as the prophylactic procedure of choice for managing peri-implant lesions and for therapy-resistant cases of periodontitis.

• 한국진공학회지
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• 제20권4호
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• pp.252-257
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• 2011

본 연구 그룹은 6H-SiC (0001)에서 성장시킨 그라핀 층에 흡착된 퓨란(furan)의 고리 형성과 전자적 성질을 원자 힘 현미경(Atomic Force Microscope : AFM), C K-edge에 대한 Near Edge X-ray Absorption Fine Structure (NEXAFS) 스펙트럼, 핵심부 준위 광전자 분광스펙트럼(Core-level Photoemission Spectroscopy : CLPES)을 이용하여 연구했다. 우리는 그라핀위에 흡착된 퓨란 분자들이 화학적 도핑이 가능한 산소기의 홀 전자쌍을 통하여 그라핀의 특성을 조절할 수 있는 화학적 기능화에 이용될 수 있다는 것을 알아냈다. 또한, 퓨란이 자발적으로 세 가지의 다른 결합 구조들 중 하나로 고리를 형성한다는 것과 그라핀 위에 퓨란에 의해 형성된 고리의 전자적 성질들이 AFM, NEXAFS, CLPES를 이용하여 각각 설명될 수 있다는 것을 보여주었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.167-171
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• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• 대한기계학회논문집A
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• 제34권11호
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• pp.1631-1636
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• 2010

본 연구는 AFM 을 이용하여 nano scale 의 Lithography 를 구현하는 것이다. 외부의 pulse generator 를 통하여 전류를 통전 시키는 방법을 수정함으로써, 일정 습도를 유지한 상태의 AFM 내부에서 Si-wafer 의 표면과 Tip의 사이에 전원을 인가하고 pulse generator 에서 임의로 pulse 폭의 변화를 준다. Si-wafer 표면에서 물 분자가 Tip과 wafer 사이의 직접적인 전류의 이동조절로 인해 전기 화학적 반응을 적절히 제한하여 산화물을 생성시키는 방법이다. 이렇게 생성된 산화물은 불산 처리를 통하여 산화물을 식각시켜 미세 그루브를 구현 할 수 있다. 본 연구를 통한 나노 패턴 생성 기법은 나노 머시닝 기술의 진보에 잠재적 가능성을 제시한다.