• Proceedings of the KSME Conference
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• 2004.04a
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• pp.923-928
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• 2004

AFM tip has been used for surface profiling with a fine resolution, but there is a barrier to improve its performance because of the low aspect ratio. Many researchers have solved this problem with attaching carbon nanotube (CNT) to Si-tip. In this paper, we proposed the aligner system that composed of dual type stage system, and these stages could attach a carbon nanotube to tungsten-tip in vacuum condition. We used tungsten tip instead of Si-tip because of its conductivity. The aligner system proposed in this paper has 10 degree-of-freedom that 3 in the first stage and 7 in the second stage. With picomotors and piezotube, the first stage has the resolution about several tens of nm and the second stage has a resolution about a nm. We experimented on characterization of Nano Aligner System and operated picomotors in SEM environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.1
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• pp.57-65
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• 2000

In this paper, a model reference adaptive control for the atomic force microscope (AFM) of tapping mode is investigated. The dynamics between the AFM system and al sample is mathematically modeled as a second order spring-mass-damper system with oscillatory inputs. The attractive and repulsive forces between the tip of the AFM system and the sample are derived using the Lennard-Jones potential energy. By non-dimensionalizing the displacement of the tip and the input frequency, the chaotic behavior near a resonance frequency is better depicted through the non-dimensionalized equations. Four nonlinear analysis techniques, a phase portrait, sensitive dependence on initial conditions, a power spectral density function, and a Pomcare map are investigated. Because the equations of motion derived in this paper involve unknown parameter values such as the damping effect of the air and the interaction constants between materials, the standard model reference adaptive control is adopted. Two control objectives, the prevention of chaos and the tracking of reference signal, are pursued. Simulation results are included.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.4 s.175
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• pp.955-962
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• 2000

Scanning Probe Microscope (SPM) such as Scanning Tunneling Microscope (STM) and Atomic Force Microscope (AFM) was shown to be the powerful tool for nano-scale characterization of a fracture surface . AFM was used to study cross sectional profiles and dimensions of fatigue striations in 2017-T351 aluminum alloy. Their widths (SW) and heights (SH) were measured from the cross sectional profiles of three-dimension AFM images. The following results that will be helpful to understand the fatigue crack growth mechanism were obtained. (1) Coincidence of the crack growth rate with the striation width was found down to the growth rate of 10-5 mm/cycle. (2) The relation of SH=0.085(SW)1.2 was obtained. (3) The ratio of the striation height to its width SH/SW did not depend on the stress intensity factor range K and the stress ratio R. (4) Not only the SW but also the SH changed linearly with the crack tip opening displacement (CTOD) when plotted in log-log scale. From these results, the applicability of the AFM to nano-fractography is discussed.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.133-133
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• 2003

최근에 강유전체 매체와 원자력 현미경 (Atomic Force Microscopy, AFM)을 이용한 초고밀도 정보 저장 장치에 대한 연구가 활발히 진행되고 있다. 이와 아울러 나도 크기의 도메인에 대하 연구에 있어서 PZT 박막의 분극 방향에 따른 SrRuO$_3$의 저항 변화를 AFM 탐침을 이용하여 감지하는 방법을 제안하였다. 본 연구에서는 Metal tip/semiconductor/barrier oxide/ferroelectric 구조에서 강유전체 분극에 의한 저항 변화의 가능성을 실험하고자, 이와 등가 구조인 Pt tip/n-Si/SiO$_2$ 구조에서 Pt 탐침과 반도체 층 사이의 I-V 특성을 측정함으로써, 게이트 전압에 따른 반도체 층의 저항변화에 대해서 분석해 보았다. 그 결과 게이트 전압에 따라서 과밀 지역 (accumulation layer)과 공핍 지역 (depletion layer)이 형성됨에 따라서 반도체 층의 정항이 변하여 I-V 특성이 변하게 됨을 관찰하였으며, 이 결과로부터 분극 방향에 따라서도 반도체 층의 저항이 변할 수 있음을 알 수 있었다.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.388-392
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• 2003

As the machine tool industry progresses, the performance of cutting tools also needs to be of good quality and specialized. If the existing metal cutting tool tip is coated properly, its life would be longer and the machining of a difficult-to-cut material also could be possible. For the development of the high quality cutting tool, the applicabilities of TiAIN coating deposited by PVD on the cutting insert were experimentally investigated. The various measurements, such as, SEM micrograph, XRD pattern, AFM surface morphology, and hardness were performed to cross-check the possibility and availability of TiAIN coated tool in the field. The effects of it is successful and we hope to see good results in many fields.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.251-252
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• 2007

Nano manipulator is used to manufacture Carbon NanoTube(CNT) tips. Using nano manipulator operator attaches a CNT at the end of Atomic Force Microscopy(AFM) tip, which requires a master mechanic and long manufacture time. Nano manipulator is installed inside Scanning Electron Microscopy (SEM) chamber to observe the operation. This paper presents a control of horizontal axis of nano manipulator via processing SEM image. Edges of AFM tip and CNT are first detected, the position information so obtained is fed to control horizontal axis of nano manipulator. To be specific, visual servoing loop was realized to control the axis more precisely.