• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.764-767
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• 2001

Because using LB method, result that produce Arachidic acid and Stearic acid LB film and measure the accumulation characteristic and electrical characteristic is as following. Organic monolayers of surface of the water compression each 9 layer's LB film to slide glass and manufactured MIM device compressing molecular film only. Could confirm that accumulation was good seeing as absorption coefficient and SEM picture, AFM picture that prevent manufactured LB films. Formation of domain of coexistence form that prevent LB film is indefinite and distinction of border side was not clear, and could know that roughness appears greatly. Obtained current by applied voltage could know that is proportional almost, though Arachidic acid appeared as bulk of current that happen in equaler certification voltage than Stearic acid is less, this alkyl chain longer Arachidic acid that serving relations special quality is superior know can .

• 한국결정성장학회지
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• 제8권2호
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• pp.292-298
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• 1998

출발원료로 ferric nitrate, ethylene glycol, acethyl acetone 혼합용액을 사용하여 dip-coating된 ${\alpha}-Fe_2O_3$ 막을 제조하였다. coating을 위한 혼합용액의 시간 경과에 따른 용액내의 가교(polymerization) 효과를 관찰하기 위해서 적외선 분광기(FT-IR)를 사용하였고, 막 형성시 유기물 분해 및 결정화 시작온도를 확인하기 위하여 FT-IR, XRD, DSC 등을 이용하여 분석을 행하였다. 또한 AFM과 SEM을 통하여 각 조건에서 제조된 막의 표면상태 및 두께 변화에 대하여 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.276-276
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• 2010

본 논문에서는 나노하이브리드 방법으로 제조된 변성 폴리이드계 나노하이브리드 절연코팅의 표면 굴곡특성을 비교 연구하였다. CS로 나노하이브리드화된 수지의 코팅표면의 표면거칠기를 AFM 으로 분석하여 그 변화를 비교하였다. CS로 처리된 나노하이브리드 코팅면의 경우 기초수지의 코팅면과 비교하여 기저재료와 상관없이 표면 거칠기는 현저히 줄어드는 경향을 나타내었다. 이는 20nm 이하의 균일한 CS입자가 균일하게 분산되어 수지 내에 자리하므로 기저물질의 거칠기를 보완하는 역할을 하기 때문으로 분석된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.459-459
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• 2011

Graphene has many fascinating material properties such as high electron mobility, high optical transparency, excellent thermal conductivity, superior Young's modulus, etc. Several studies have recently found that single-layer graphene is chemically more reactive than few-layer graphene when supported on silicon dioxide substrates with sub-nm roughness. In this study, we have investigated the influence of substrates on chemical reactivity of graphene. Morphology and thermal oxidation behavior of graphene on atomically flat mica substrates were studied by atomic force microscopy (AFM) and Raman spectroscopy compared to graphene on SiO2/Si substrates. Notably, oxidation of single-layer graphene proceeds more slowly on mica than SiO2/Si. Detailed analysis led to a conclusion that deformation along the out-of-plane direction enhances reactivity of graphene.

• Corrosion Science and Technology
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• 제9권5호
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• pp.201-208
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• 2010

Epoxy coatings cured by different amine based curing agents have been prepared. Atomic force microscopy (AFM) has been used to monitor the surface topology changes of epoxy coatings before and after hygrothermal cyclic test. The glass transition temperature ($T_g$) and coefficient of thermal expansion (CTE) of the epoxy coating were measured by Thermo-mechanical Analysis (TMA). The Electrochemical impedance spectroscopy (EIS) with hygrothermal cyclic test has been introduced to evaluate the corrosion protection of the epoxy coatings. In conclusion, thermal properties of epoxy coatings were in good agreement with the results of corrosion protection of epoxy coated carbon steel obtained result by EIS with hygrothermal cyclic test. The relationship between thermal properties, surface roughness changes and corrosion protection of epoxy coatings are discussed in this study.

• 한국재료학회지
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• 제16권7호
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• pp.445-448
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• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.31-36
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• 2004

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.700-705
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• 1997

Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.