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http://dx.doi.org/10.3740/MRSK.2006.16.7.445

Effects of ZnO Buffer Layer Thickness on the Crystallinity and Photoluminescence Properties of Rf Magnetron Sputter-deposited ZnO Thin Films  

Cho, Y.J. (Department of Material Science & Engineering, Inha University)
Park, An-Na (Department of Material Science & Engineering, Inha University)
Lee, Chong-Mu (Department of Material Science & Engineering, Inha University)
Publication Information
Korean Journal of Materials Research / v.16, no.7, 2006 , pp. 445-448 More about this Journal
Abstract
Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.
Keywords
ZnO; Zn buffer layer; rf magnetron sputtering; XRD; PL; AFM;
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