• The Journal of Information Technology
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• v.10 no.3
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• pp.47-58
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• 2007

In this paper, we designed and manufactured the distortion-cancellation module which is able to compensate thermal-noise distortion by software. The distortion-cancellation algorithm not only bring forth system non-linear distortion by input level but also bring compensate component of distortion by thermal to get rid off distortion from now on. After TMS 320C6711 DSP to recognize our algorithm, we manufactured the module for every kinds of system. To evaluate efficiency of the distortion-cancellation module, we designed and manufactured communication system. By measured result, if system output power is -3dBm equally, 12dB of ACLR has improved in 1MHz away from a center frequency, and also gain has increased up to 0.5dB.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.273-276
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• 2003

In this paper, we designed and made up/down converter (UDC) for using W-CDMA digital pre-distortion system which is one of the efficiency enhancement techniques. UDC is required that frequency up(baseband to RF) and down(RF to baseband) of information signals. The focus of the design and PCB layout is to satisfy the linearity of the UDC. We tested that UDC was satisfied specification which is based on 3GPP base stations and repeaters. The ACLR results which are -51.84dBc(Up Converter) and -55.0dBc(Down Converter) at upper 5 MHz offset from center-frequency show that UDC satisfy the 3GPP specification with superior linearity data.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.293-296
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• 2003

This paper evaluates the RF transmitting parameters of User Equipment(UE) for W-CDMA system based on 3GPP specifications. The parameters of transmitter are derived from the aspect of RF. In order to keep UE in high performance, the transmitter requirements such as ACLR, EVM, Peak Code Domain Error, spectrum emission mask are considered. The UE transceiver is implemented on the basis of performance requirements and then tested for the analysis of RF transmitter characteristics through test scenarios.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.839-846
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• 2007

In this paper, the first attempt to design a novel structure of dual-band feedforward linear power amplifier(FFW LPA) was presented. Up to now, primary technical difficulty has been the extension of the conventional signal canceller to the dual-band operation. Therefore, we propose the design technique of the dual-band equal group delayed carrier canceller, the dual-band equal group delayed intermodulation distortion(IMD) canceller and the dual-band FFW LPA. The operation frequency bands of the implemented dual-band FFW LPA are digital cellular($f_0=880$ MHz) and IMT-2000($f_0=2.14$ GHz) band, which are separated about 1.26 GHz. With the high power amplifier of 120 W PEP for commercial base-station application, IMD cancellation loop shows 20.45 dB and 25.04 dB loop suppression at each band of operation for 100 MHz. From the adjacent channel leakage ratio(ACLR) measurement with CDMA IS-95A 4FA and WCDMA 4FA signal, we obtained 16.52 dB improvement at the average output power of 41.5 dBm for digital cellular band, and 18.59 dB improvement at the average output power of 40 dBm for IMT-2000 band simultaneously.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2241-2248
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• 2011

This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.1
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• pp.24-36
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• 2003

The digital mobile communication will be developed till getting multimedia service in anyone, any where, any time. Theses requiring items are going to be come true via IMT-2000 system. Transmitting signal bandwidth of IMT-2000 system is 3 times as large as IS-95 system. That is mean peak to average of signal is higher than IS-95A system. So we have to design it carefully not to effect in adjacent channel. HPA(High Power Amplifier) located in the end point of system is operated in 1-㏈ compression point(Pl㏈), then it generates 3rd and 5th inter modulation signals. Theses signals affect at adjacent channel and RF signal is distorted by compressed signal which is operated near by Pl㏈ point. Then the most important design factor is how we make HPA having high linearity. Feedback, Pre-distorter and Feed-forward methods are presented to solve theses problems. Feed-forward of these methods is having excellent improving capacity, but composed with complex structure. Generally, Linearity and Efficiency in power amplifier operate in the contrary, then it is difficult for us to find optimal operating point. In this paper we applied algorithm which searches optimal point of linear characteristics, which is key in Power Amplifier, using minimum current point of error amplifier in 1st loop. And we made 2nd loop compose with new structure. We confirmed fabricated LPA is operated by having high linearity and minimum current condition with ACPR of -26 ㏈m max. @ 30㎑ BW in 3.515㎒ and ACLR of 48 ㏈c max@${\pm}$㎒ from 1W to 40W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1096-1103
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• 2008

This paper proposes an individual order predistortion linearizer using intermodulation distortion(IMD) generator for cancellation the third and the fifth IMD of power amplifier. The IMD generator for controlling the third and the fifth IMD consist of common Emitter amplifier and Schottky diode. These signals are generated by series feedback of Schottky diode to obtain the inverse AM/AM and AM/PM characteristics of power amplifier. The individual order predistorters are consisted of individual IMD generator, power splitter and combiner. The test results show that the third and the fifth IMD can be improved by a maximum 13.5 dB and 0.9 dB in case of CW 2-tone signals. Also, the Adjacent Channel Leakage Ratio(ACLR) can be improved 2.3 dB, 2.5 dB at ${\pm}0.885$ MHz, ${\pm}1.23$ MHz offset frequency for CD-MA IS-95 2FA signals.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.16-26
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• 2011

This paper presents high power and high efficiency Doherty amplifiers for 2.345 GHz wireless broadband (WiBro) applications that use a Nitronex 125-W ($P_{3dB}$) GaN high electron mobility transistor (HEMT). Two- and three-way Doherty amplifiers and a saturated Doherty amplifier using Class-F circuitry are implemented. The measured result for a center frequency of 2.345 GHz shows that the two-way Doherty amplifier attains a high $P_{3dB}$ of 51.5 dBm, a gain of 12.5 dB, and a power-added efficiency (PAE) improvement of about 16 % compared to a single class AB amplifier at 6-dB back-off power region from $P_{3dB}$. For a WiBro OFDMA signal, the Doherty amplifier provides an adjacent channel leakage ratio (ACLR) at 4.77 MHz offset that is -33 dBc at an output power of 42 dBm, which is a 9.5 dB back-off power region from $P_{3dB}$. By employing a digital pre-distortion (DPD) technique, the ACLR of the Doherty amplifier is improved from -33 dBc to -48 dBc. The measured result for the same frequency shows that the three-way Doherty amplifier, which has a $P_{3dB}$ of 53.16 dBm and a gain of 10.3 dB, and the saturated Doherty amplifier, which has a $P_{3dB}$ of 51.1 dBm and a gain of 10.3 dB, provide a PAE improvement of 11 % at the 9-dB back-off power region and 7.5 % at the 6-dB back-off region, respectively, compared to the two-way Doherty amplifier.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.1-8
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• 2014

A differential-cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented by 0.18 ${\mu}m$ RF CMOS technology. The loss at the output is minimized by implementing the output transformer on a FR-4 printed circuit board (PCB). The CMOS PA utilizes the $2^{nd}$ harmonic short at the input to enhance the linearity. The measurement was done by the 10MHz bandwidth 16QAM 6.88 dB peak-to-average power ratio long-term evolution (LTE) signal at 1.85 GHz. The ET operation of the CMOS PA with the supply modulator enhances the power-added efficiency (PAE) by 2.5, to 10% over the stand-alone CMOS PA for the LTE signal. The ET PA achieves a PAE of 36.5% and an $ACLR_{E-UTRA}$ of -32.7 dBc at an average output power of 27 dBm.