• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Journal of Power System Engineering
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• v.4 no.4
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• pp.99-107
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• 2000

In this study several P type and N type ceramic semiconductors were prepared by atomic valence control and their electric resistivities were investigated with various concentrations of additive impurities. N-P junctions were made by thin film printing method and their varistor-like characteristics were investigated and their availability was discussed. The results are followings, 1) Some N type semiconductors with a proper concentration of additive impurity have minimum resistivities. 2) The N-P junction samples with ZnO as a constituent material of N type semiconductor have linearity in voltage-current characteristics, but the other N-P junction samples have the non-linearity, 3) Some N-P junction samples showed the good varistor-like characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.153-153
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• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.239-244
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• 2000

Synthesis and high temperature phase stability of $_{1+x}$ Co$_{y}$ Mn$_{2-y}$ $O_4$(0$\leq$x$\leq$0.2,y=0,1/9,1/6) spinel, both the excess lithium and cobalt added, have been studied. The spinel was prepared by oxalate precipitation method as the wet chemical process. Oxalate derived spinel was synthesized by heating of precipitates at temperature lower than $600^{\circ}C$. As a result of the TG-DTA and XRD analysis of prepared and quenched powders, it was found that reversible phase transitions started at temperatures $T_1$, $T_2$및 $T_{2'}$. The transitions involved weight (oxygen) loss and gain during heating and cooling. The effects of Li excess and Co doping on the spinel lattice constant, phase stability and transition temperatures of the prepared powders are investigated. This study would provide important data for determining the spinel preparation process such as synthesis temperature and cooling speed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.110-115
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• 2019

$Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.150-154
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• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

• Progress in Superconductivity
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• v.10 no.1
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.163-175
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• 1995

Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.856-862
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• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.