Journal of Power System Engineering (동력기계공학회지)
- Volume 4 Issue 4
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- Pages.99-107
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- 2000
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- 2713-8429(pISSN)
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- 2713-8437(eISSN)
Application of Ceramic Oxides to Low-voltage Varistor
산화물 세라믹스의 미소전압용 바리스터에 대한 응용
- Published : 2000.11.30
Abstract
In this study several P type and N type ceramic semiconductors were prepared by atomic valence control and their electric resistivities were investigated with various concentrations of additive impurities. N-P junctions were made by thin film printing method and their varistor-like characteristics were investigated and their availability was discussed. The results are followings, 1) Some N type semiconductors with a proper concentration of additive impurity have minimum resistivities. 2) The N-P junction samples with ZnO as a constituent material of N type semiconductor have linearity in voltage-current characteristics, but the other N-P junction samples have the non-linearity, 3) Some N-P junction samples showed the good varistor-like characteristics.