• Title/Summary/Keyword: 95 m gate

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Dynamic Characteristics of the Long Span Truss-Type Lift Gate by Model Test (모형실험에 의한 장지간 트러스형 리프트 게이트의 진동 특성)

  • Lee, Seong Haeng;Hahm, Hyung-Gil;Ryu, Goang Sik
    • Journal of The Korean Society of Agricultural Engineers
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    • v.57 no.6
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    • pp.117-123
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    • 2015
  • An experimental study of model truss-type vertical gate consisting of a truss and a plate was presented in this paper to examine the structural dynamics of the gates. A 1:61 scale model was constructed for the 95 m prototype gate using an acrylic truss and an acrylonitrile butadiene styrene plate. The scaled model was tested in a 1.6 m wide concrete flume for two orientations to determine the effects of gate orientation on structural vibrations. Natural frequencies of the model gate was measured and calibrated with FEM predictions. Vertical vibrations were measured under various operational conditions, including a range of bottom opening heights and different upstream and downstream water levels. The gate model with reverse direction was preferred due to its low overall vibrational response and flow level combinations. The test results also provide a basic dataset for development of operations guidelines that minimize flow-induced vibrations of the gates.

A Quadrature VCO Exploiting Direct Back-Gate Second Harmonic Coupling

  • Oh, Nam-Jin
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.134-137
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    • 2008
  • This paper proposes a novel quadrature VCO(QVCO) based on direct back-gate second harmonic coupling. The QVCO directly couples the current sources of the conventional LC VCOs through the back-gate instead of front-gate to generate quadrature signals. By the second harmonic injection locking, the two LC VCOs can generate quadrature signals without using on-chip transformer, or stability problem that is inherent in the direct front-gate second harmonic coupling. The proposed QVCO is implemented in $0.18{\mu}m$ CMOS technology operating at 2 GHz with 5.0 mA core current consumption from 1.8 V power supply. The measured phase noise of the proposed QVCO is - 63 dBc/Hz at 10 kHz offset, -95 dBc/Hz at 100 kHz offset, and -116 dBc/Hz at 1 MHz offset from the 2 GHz output frequency, respectively. The calculated figure of merit(FOM) is about -174 dBc/Hz at 1 MHz offset. The measured image band rejection is 46 dB which corresponds to the phase error of $0.6^{\circ}$.

Fabrication and Properties of Under Gate Field Emitter Array for Back Light Unit in LCD

  • Jung, Yong-Jun;Park, Jae-Hong;Jeong, Jin-Soo;Nam, Joong-Woo;Berdinsky, Alexander S.;Yoo, Ji-Beom;Park, Chong-Yun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1530-1533
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    • 2005
  • We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

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Design and fabrication of MMIC VCO for double conversion TV tuner (이중 변환 TV 튜너용 MMIC 전압제어발진기의 설계 제작)

  • 황인갑;양전욱;박철순;박형무;김학선;윤경식
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.121-126
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    • 1996
  • In this paper an MMIC VCO which can be used in a double conversion TV tuner is designed, fabricated and measured. The VCO is designed using the small signal method and fabricated using ETRI GaAs MMIC foundry. The 3x200$\mu$m gate width MESFET with 1$\mu$m gate length is used for an active device and MIM capacitors, spiral inductors, thin film resitors are used as passive elements. The VCO has output power of 10.95dBm at 1955 MHz with 5V bias voltage and 4V tuning voltage. The oscillation frequency change form 1947 MHz to 1964 MHz is obtaine dby an external varactor diode connected to the gate with a tuning voltage from 0 V to 6V.

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Dynamic Characteristics of Truss-Type Lift Gate According to Installation Direction (트러스형 리프트 게이트의 설치방향에 따른 진동 특성)

  • Lee, Seong-Haeng;Kong, Bo-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.12
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    • pp.120-127
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    • 2016
  • This study examined the dynamic characteristics of the gate to identify the optimal gate installation direction according to the installation direction. A 1:31 scale model was constructed for a 47.5m prototype gate using acrylic. The scaled weights were tuned by adding lead weights. The first step was to measure the natural frequencies of the model gates, and compare them with finite-element analysis of the prototypes as a calibration. The scaled model was tested in a 1.6 m wide concrete flume for two orientations to determine the effects of the gate orientation on structural vibrations. Vertical vibrations were measured under a range of operational conditions, including a range of bottom opening heights and different upstream and downstream water levels. For large bottom opening heights in the normal direction, relatively large vibrations were induced by vortices shed at the plate bottom that would strike the horizontal truss member. This phenomenon was avoided in the reverse direction. For small bottom opening heights in the normal direction, these vibrations were caused by a suction force that developed at the gate bottom. The gate model in the reverse direction was preferred because of its low overall vibrational response under general gate opening and flow level combinations.

A 170㎼ Low Noise Amplifier Using Current Reuse Gm-boosting Technique for MedRadio Applications (전류 재사용 Gm-boosting 기술을 이용한 MedRadio 대역에서의 170㎼ 저잡음 증폭기)

  • Kim, InSoo;Kwon, Kuduck
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.2
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    • pp.53-57
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    • 2017
  • This paper proposes a 401MHz-406MHz low noise amplifier for MedRadio applications. The proposed low noise amplifier adopts a common gate amplifier topology using current reuse gm-boosting technique. The proposed low noise amplifier shows better performance of voltage gain and noise figure than the conventional gm-boosted common gate amplifier in the same power consumption. The proposed current-reuse gm-boosted low noise amplifier achieves a voltage gain of 22 dB, a noise figure of 2.95 dB, and IIP3 of -17 dBm while consuming $170{\mu}W$ from a 0.5 V supply voltage in $0.13{\mu}m$ CMOS process.

High-Performance Multiplier Using Modified m-GDI(: modified Gate-Diffusion Input) Compressor (m-GDI 압축 회로를 이용한 고성능 곱셈기)

  • Si-Eun Lee;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.2
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    • pp.285-290
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    • 2023
  • Compressors are widely used in high-speed electronic systems and are used to reduce the number of operands in multiplier. The proposed compressor is constructed based on the m-GDI(: modified gate diffusion input) to reduce the propagation delay time. This paper is compared the performance of compressors by applying 4-2, 5-2 and 6-2 m-GDI compressors to the multiplier, respectively. As a simulation results, compared to the 8-bit Dadda multiplier using the 4-2 and 6-2 compressor, the multiplier using the 5-2 compressor is reduced propagation delay time 13.99% and 16.26%, respectively. Also, the multiplier using the 5-2 compressor is reduced PDP(: Power Delay Product) 4.99%, 28.95% compared to 4-2 and 6-2 compressor, respectively. However, the multiplier using the 5-2 compression circuit is increased power consumption by 10.46% compared to the multiplier using the 4-2 compression circuit. In conclusion, the 8-bit Dadda multiplier using the 5-2 compressor is superior to the multipliers using the 4-2 and 6-2 compressors. The proposed circuit is implemented using TSMC 65nm CMOS process and its feasibility is verified through SPECTRE simulation.

High Power Factor High Efficiency PFC AC/DC Converter for LCD Monitor Adapter (LCD 모니터의 어댑터를 위한 고역률 고효율 PFC AC/DC 컨버터)

  • Park K. H.;Kim C. E.;Youn M. J.;Moon G. W.
    • Proceedings of the KIPE Conference
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    • 2003.11a
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    • pp.85-89
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    • 2003
  • Many single-stage PFC(power-facto.-correction) ACHC converters suffer from the high link voltage at high input voltage and light load condition. In this paper, to suppress the link voltage, a novel high power factor high efficiency PFC AC/DC converter is proposed using the single controller which generates two gate signals so that one of them is used far gate signal of the flyback DC/DC converter switch and the other is applied to the Boost PFC stage. A 130w prototype for LCD monitor adapter with universal input $(90-265V_{rms})$ and 19.5V 6.7A output is implemented to verify the operational principles and performances. The experimental results show that the maximum link voltage stress is about 450V at 270Vac input voltage. Moreover, efficiency and power factor are over $84\%$ and 0.95, respectively, under the full load condition.

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Channel width 변화에 따른 Large Size Grain TFT의 전기적 특성 비교 분석

  • Jeong, U-Jeong;Lee, Won-Baek;Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.61-61
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    • 2009
  • P-type SGS-TFTs with 10 ${\mu}m$ channel length and two channel widths; $W_1=5{\mu}m$ and $W_2=10{\mu}m$ which has gate insulator made of 20nm $SiO_2$ and 80nm SiNx was fabricated and the electrical properties of them were measured. The field-effect mobility was increased from 95.84 to 104.19 $cm^2/V-s$ and threshold voltage also increased from -0.802 V to -0.954 V, when channel width is increased from5 ${\mu}m$ to 10 ${\mu}m$. Subthreshold swing decreased from 0.418 to 0.343 V/dec and $I_{on/off}$ ratio increased from $4.77{\times}10^7$ to $7.30{\times}10^7$.

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DC-DC Boost Converter with Dead-Time Adaptive Control and Power Switching (Dead-Time 적응제어 기능과 Power Switching 기능을 갖는 DC-DC 부스트 변환기)

  • Lee, Joo-young;Yang, Min-jae;Kim, Doo-Hoi;Yoon, Eun-jung;Yu, Chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.361-364
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    • 2013
  • Since the non-overlapping gate driver used in conventional DC-DC boost converters generates fixed dead-times, the converters suffer from the body-diode conduction loss or the charge-sharing loss. A adaptive control method has been proposed to reduce these loses. In this method, however, occurrence of and overlapping time of two power transistors in CCM results in reduction of efficiency. In this paper, to overcome this problem a new adaptive control method in proposed, and a DC-DC boost converter with the proposed adaptive control and power switching has been designed in a 0.35um CMOS process. The designed converter outputs 3.3V from a input voltage of 2.5V. The switching frequency is 500kHz and the maximum power efficiency is 95.3% at a load current 150mA. The designed chip area is $1720um{\times}1280um$.

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