Abstract
P-type SGS-TFTs with 10 ${\mu}m$ channel length and two channel widths; $W_1=5{\mu}m$ and $W_2=10{\mu}m$ which has gate insulator made of 20nm $SiO_2$ and 80nm SiNx was fabricated and the electrical properties of them were measured. The field-effect mobility was increased from 95.84 to 104.19 $cm^2/V-s$ and threshold voltage also increased from -0.802 V to -0.954 V, when channel width is increased from5 ${\mu}m$ to 10 ${\mu}m$. Subthreshold swing decreased from 0.418 to 0.343 V/dec and $I_{on/off}$ ratio increased from $4.77{\times}10^7$ to $7.30{\times}10^7$.
