• Title/Summary/Keyword: 5 nm & 7 nm technology

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Synthesis and Characterization of Red Light-Emitting Random Copolymers

  • Lee, Yeong-Beom;Shim, Hong-Ku
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1418-1421
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    • 2009
  • A series of new light-emitting random copolymers with fully conjugated structure was prepared, for the first time through the well-known Gilch polymerization between 1,4-bis(chloromethyl)-2-ethylhexyloxy-5-methoxybenzene and 2,5-bis(bromomethyl)thiophene monomers in different ratios. The synthesized polymers (on thin film) showed the maximum wavelength of UV-visible absorbance and photoluminescence (PL) near 500 nm and near 600 nm, respectively. A single-layer light-emitting diode device, which has a simple ITO (indium-tin oxide)/polymer/Al configuration, was fabricated by spin-coating of polymers and then vacuum evaporation of Al metal. The threshold bias of PMEHPVTVs was in the range of 3.5-10 V. As in the PL spectra, the maximum wavelength of light emission near 600 nm was also shown in electroluminescence (EL) spectra of PMEHPVTVs when the operating voltage was about 7 - 14 V.

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Characteristics of Plastic Scintillators Fabricated by a Polymerization Reaction

  • Lee, Cheol Ho;Son, Jaebum;Kim, Tae-Hoon;Kim, Yong Kyun
    • Nuclear Engineering and Technology
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    • v.49 no.3
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    • pp.592-597
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    • 2017
  • Three plastic scintillators of 4.5 cm diameter and 2.5-cm length were fabricated for comparison with commercial plastic scintillators using polymerization of the styrene monomer 2.5-diphenyloxazole (PPO) and 1,4-bis benzene (POPOP). Their maximum emission wavelengths were determined at 426.06 nm, 426.06 nm, and 425.00 nm with a standard error of 0.2% using a Varian spectrophotometer (Agilent, Santa Clara, CA, USA). Compton edge spectra were measured using three gamma ray sources [i.e., cesium 137 ($^{137}Cs$), sodium 22 ($^{22}Na$), and cobalt 60 ($^{60}Co$)]. Energy was calibrated by analyzing the Compton edge spectra. The fabricated scintillators possessed more than 99.7% energy linearity. Light output was comparable to that of the BC-408 scintillator (Saint-Gobain, Paris, France). The fabricated scintillators showed a light output of approximately 59-64% of that of the BC-408 scintillator.

Non-Invasive HbA1c Measurement Using Two-Wavelength Raman Scattering (2 파장 라만 산란을 이용한 비침습적 HbA1c 측정)

  • Yang, Jooran;Kim, Hyungpyo
    • Journal of Sensor Science and Technology
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    • v.28 no.5
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    • pp.305-310
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    • 2019
  • The purpose of this study is to classify the concentration of HbA1c (glycosylated hemoglobin), which is an indicator in the management of accurate blood glucose level in diabetic patients, using a non-invasive optical property measurement method. To measure the optical properties of HbA1c, the optical source uses LEDs and laser diodes of 400 nm in the visible region and 1450 nm in the nearinfrared region using thermopile to detect the Raman scattering intensity. An HbA1c control solution was used. As a result, the optical properties of 5% (normal) and 9% (abnormal) HbA1c control solutions showed specificity in which the output values were reversed at 850 nm and 950 nm, respectively. This property was applied to distinguish between normal and abnormal values in diabetes. In addition, considering tissue penetration depths for non-invasive measurements, two wavelengths were determined to be effective in distinguishing the concentrations of HbA1c control solutions at 5%, 7%, and 9%.

GOCI-II Capability of Improving the Accuracy of Ocean Color Products through Fusion with GK-2A/AMI (GK-2A/AMI와 융합을 통한 GOCI-II 해색 산출물 정확도 개선 가능성)

  • Lee, Kyeong-Sang;Ahn, Jae-Hyun;Park, Myung-Sook
    • Korean Journal of Remote Sensing
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    • v.37 no.5_2
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    • pp.1295-1305
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    • 2021
  • Satellite-derived ocean color products are required to effectively monitor clear open ocean and coastal water regions for various research fields. For this purpose, accurate correction of atmospheric effect is essential. Currently, the Geostationary Ocean Color Imager (GOCI)-II ground segment uses the reanalysis of meteorological fields such as European Centre for Medium-Range Weather Forecasts (ECMWF) or National Centers for Environmental Prediction (NCEP) to correct gas absorption by water vapor and ozone. In this process, uncertainties may occur due to the low spatiotemporal resolution of the meteorological data. In this study, we develop water vapor absorption correction model for the GK-2 combined GOCI-II atmospheric correction using Advanced Meteorological Imager (AMI) total precipitable water (TPW) information through radiative transfer model simulations. Also, we investigate the impact of the developed model on GOCI products. Overall, the errors with and without water vapor absorption correction in the top-of-atmosphere (TOA) reflectance at 620 nm and 680 nm are only 1.3% and 0.27%, indicating that there is no significant effect by the water vapor absorption model. However, the GK-2A combined water vapor absorption model has the large impacts at the 709 nm channel, as revealing error of 6 to 15% depending on the solar zenith angle and the TPW. We also found more significant impacts of the GK-2 combined water vapor absorption model on Rayleigh-corrected reflectance at all GOCI-II spectral bands. The errors generated from the TOA reflectance is greatly amplified, showing a large error of 1.46~4.98, 7.53~19.53, 0.25~0.64, 14.74~40.5, 8.2~18.56, 5.7~11.9% for from 620 nm to 865 nm, repectively, depending on the SZA. This study emphasizes the water vapor correction model can affect the accuracy and stability of ocean color products, and implies that the accuracy of GOCI-II ocean color products can be improved through fusion with GK-2A/AMI.

A Study on SONOS Non-volatile Semiconductor Memory Devices for a Low Voltage Flash Memory (저전압 플래시메모리를 위한 SONOS 비휘발성 반도체기억소자에 관한 연구)

  • 김병철;탁한호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.2
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    • pp.269-275
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    • 2003
  • Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

Particle Size Effect: Ru-Modified Pt Nanoparticles Toward Methanol Oxidation

  • Kim, Se-Chul;Zhang, Ting;Park, Jin-Nam;Rhee, Choong-Kyun;Ryu, Ho-Jin
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3331-3337
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    • 2012
  • Ru-modified Pt nanoparticles of various sizes on platelet carbon nanofiber toward methanol oxidation were investigated in terms of particle size effect. The sizes of Pt nanoparticles, prepared by polyol method, were in the range of 1.5-7.5 nm and Ru was spontaneously deposited by contacting Pt nanoparticles with the Ru precursor solutions of 2 and 5 mM. The Ru-modified Pt nanoparticles were characterized using transmission electron microscopy, X-ray photoelectron spectroscopy and cyclic voltammetry. The methanol oxidation activities of Ru-modified Pt nanoparticles, measured using cyclic voltammetry and chronoamperometry, revealed that when the Pt particle size was less than 4.3 nm, the mass specific activity was fairly constant with an enhancement factor of more than 2 at 0.4 V. However, the surface area specific activity was maximized on Pt nanoparticles of 4.3 nm modified with 5 mM Ru precursor solution. The observations were discussed in terms of the enhancement of poison oxidation by Ru and the population variation of Pt atoms at vertices and edges of Pt nanoparticles due to selective deposition of Ru on the facets of (111) and (100).

Study on depositing oxide films on Ni substrate for superconducting tape (초전도 테이프 제작을 위한 니켈기판상의 산화물 박막증착에 대한 연구)

  • Kim, Ho-Sup;Shi, Dongqui;Chung, Jun-Ki;Ha, Hong-Soo;Ko, Rock-Kil;Choi, Soo-Jeong;Park, Yu-Mi;Song, Kyu-Jeong;Yeom, Do-Jun;Park, Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.531-534
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    • 2004
  • 초전도 coated conductor는 보호층/초전도층/완충층/금속기판의 구조를 가지며 완충층은 다층산화물 박막으로 이루어져 있다. 본 연구에서는 니켈 기판의 원자가 초전도층으로 확산 침투하는 것을 방지하는 YSZ(Yttria Stabilized Zirconia) 박막의 증착방법 및 최적조건에 대하여 소개하고자 한다. 금속타겟을 사용하며 산화반응가스로서 수증기를 사용하는 것을 특징으로 하는 DC reactive sputtering을 이용하여 YSZ를 증착하였으며 기판 온도는 $850^{\circ}C$ 이며 증착시 수증기 분압은 1mTorr이었다. YSZ의 최적두께를 알아보기 위하여 $CeO_2(12.2nm)/Ni$ 상부에 130nm, 260nm, 390nm, 650nm로 두께를 달리하여 YSZ층을 증착하고 SEM으로 박막 표면상태를 관찰한 결과 columnar grain growth를 하며 두께가 두꺼워 질수록 표면조도가 증가함을 알 수 있었다. 4개의 각 시료위에 thermal evaporation 증착법을 이용하여 $CeO_2$를 18.3nm의 두께로 증착한 후 PLD를 이용하여 YBCO 초전도 박막을 300nm 두께로 증착하였고 77K, 0T에서 임계전류가 각각 0, 6A, 7.5A, 5A로 측정되었다. 이는 YSZ층의 두께가 두꺼워질수록 기판 구성원자의 확산방지역할을 충실히 하는 반면에 표면조도는 증가함을 알 수 있었다.

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Color Removal Efficiency for the Effluent of Activated Sludge Process for Pig Wastewater by TiO$_2$ Treatment System (TiO$_2$를 이용한 양돈장의 활성오니처리방류수의 탈색처리에 관한 연구)

  • 최희철;이덕수;권두중;강희설;곽정훈;최동윤;연규영;최영수;양창범
    • Journal of Animal Environmental Science
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    • v.9 no.2
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    • pp.85-92
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    • 2003
  • These experiments were conducted to evaluate the efficiency of the color removal treatment system of pig wastewater by $TiO_2$. The results obtained are summarized as follow : 1 The color removal efficiency of effluent of activated sludge process by $TiO_2$ level were 59.7 and 52.5% for 1.0 and 2.0g/$\ell$ at 360 minute of operation time, respectively. 2. The color of pig wastewater was changed from 655 color unit(cu) to 146cu of the wastewater treatment of pH 5 at 300 minute of operation time. 3. The $H_2O_2$ level for color removal showed at 200mg/$\ell$ and in that level, the color removal efficiency was 52.5%. 4. The color removal efficiency of 365nm UV intensity was 29.4%, but 254nm of UV intensity was higher(50.1%) than 365nm for color removal.

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Crystal Growth and Scintillation Properties of CsI:Gd (CsI:Gd 결정 육성과 섬광 특성)

  • Cheon, Jong-Kyu;Kim, Sung-Hwan;Kim, Hong-Joo
    • Journal of Sensor Science and Technology
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    • v.21 no.4
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    • pp.293-297
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    • 2012
  • CsI:Gd crystal was grown by the Bridgeman method and its scintillation properties were investigated. The wavelength peak of the luminescence spectrum for the crystal excited by X-ray was 419 nm. The range of the spectrum was from 300 nm to 800 nm. The spectrum well matched to the quantum efficiency of a typical bi-alkali photo-multiplier tube(PMT). An energy resolution of 48.2 % was obtained for 662 keV ${\gamma}$-rays of $^{137}Cs$. The three decay times were obtained as a fast(557.4 ns, 42.2 %), intermediate (1.78 ${\mu}s$, 29.7 %) and slow (5.43 ${\mu}s$, 28.1 %) components, respectively.

DC Characterization of Gate-all-around Vertical Nanowire Field-Effect Transistors having Asymmetric Schottky Contact

  • Kim, Gang-Hyeon;Jeong, U-Ju;Yun, Jun-Sik
    • Proceeding of EDISON Challenge
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    • 2017.03a
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    • pp.398-403
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    • 2017
  • 본 연구에서는 gate-all-around(GAA) 수직 나노선 Field-Effect Transistor(FET)의 소스/드레인 반도체/실리사이드 접합에 존재하는 Schottky 장벽이 트랜지스터의 DC특성에 미치는 영향에 대하여 조사하였다. Non-Equilibrium Green's Function와 Poisson 방정식 기반의 시뮬레이터를 사용하여, Schottky 장벽의 위치와 높이, 그리고 채널 단면적의 크기에 따른 전류-전압 특성 곡선과 에너지 밴드 다이어그램을 통해 분석을 수행하였다. 그 결과, 드레인 단의 Schottky 장벽은 드레인 전압에 의해 장벽의 높이가 낮아져 전류에 주는 영향이 작지만, 소스 단의 Schottky 장벽은 드레인 전압과 게이트 전압으로 제어가 불가능하여 외부에서 소스 단으로 들어오는 캐리어의 이동을 방해하여 큰 DC성능 저하를 일으킨다. 채널 단면적 크기에 따른 DC특성 분석 결과로는 동작상태의 전류밀도는 채널의 폭이 5 nm 일 때까지는 유지되고, 2 nm가 되면 그 크기가 매우 작아지지만, 채널 단면적은 Schottky 장벽에 영향을 끼치지 못하였다. 본 논문의 분석 결과로 향후 7 nm technology node 에 적용될 GAA 수직 나노선 FET의 소자 구조 설계에 도움이 되고자 한다.

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