• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.3
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• pp.422-428
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• 2015

A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

• ETRI Journal
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• v.40 no.1
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• pp.39-50
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• 2018

More people prefer using rail traffic for travel or for commuting owing to its convenience and flexibility. The railway scenario has become an important communication scenario in the fifth generation era. The communication system should be designed to support high-data-rate demands with seamless connectivity at a high mobility. In this paper, the channel characteristics are studied and modeled for the railway tunnel scenario with straight and curved route shapes. On the basis of measurements using the "Mobile Hotspot Network" system, a three-dimensional ray tracer (RT) is calibrated and validated for the target scenarios. More channel characteristics are explored via RT simulations at 25.25 GHz with a 500-MHz bandwidth. The key channel parameters are extracted, provided, and incorporated into a 3rd-Generation-Partnership-Project-like stochastic channel generator. The necessary channel information can be practically realized, which can support the link-level and system-level design of the communication system in similar scenarios.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.580-587
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• 2003

In this paper, we introduce a novel model to analyze the linearity of a TW-EAM (traveling-wave electroabsorption modulator). The device length, microwave loss (ML), and internal reflection (IR) due to impedance mismatch have effect on the linearity of a TW-EAM. The longer devices have characteristics of lower biases with minimum IMDS (intermodulation distortions). ML decreases the output power as well as the IMD value. Internal reflection has different nonlinear characteristics according to the wavelength of the input frequency and the device length. There is little change in SFDR (spurious-free dynamic range) due to ML or IR. As a result, for a 50 GHz band RF-optical communication system, a 0.8 mm-long TW-EAM with the lowest ML would have better properties by using n, which is caused by impedance, mismatch at the output port.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.16-19
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• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Korean Journal of Optics and Photonics
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• v.32 no.3
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• pp.120-125
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• 2021

We have developed a linearly polarized high-power Yb-doped fiber laser in the master oscillator power amplifier (MOPA) scheme for efficient spectral beam combining. We modulated the phase of the seed laser by pseudo-random binary sequence (PRBS), with the bit length optimized to suppress stimulated Brillouin scattering (SBS), and subsequently amplified seed power in a 3-stage amplifier system. We have constructed by coiling the polarization-maintaining (PM) Yb-doped fiber, with core and cladding diameters of 20 ㎛ and 400 ㎛ respectively, to a diameter of 9-12 cm for suppression of the mode instability (MI). Finally, we obtained an output power of 1.004 kW with a slope efficiency of 83.7% in the main amplification stage. The beam quality factor M² and the polarization extinction ratio (PER) were measured to be 1.12 and 21.5 dB respectively. Furthermore, the peak-intensity difference between the Rayleigh signal and SBS signal was observed to be 2.36 dB in the backward spectra, indicating that SBS is successfully suppressed. In addition, it can be expected that the MI does not occur because not only there is no decrease in slope efficiency, but also the beam quality for each amplified output is maintained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.22-26
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• 2012

This paper introduces a 2.5-Gb/s optical receiver implemented in a standard 1P4M 0.18um CMOS technology for the applications of active optical HDMI cables. The optical receiver consists of a differential transimpedance amplifier(TIA), a five-stage differential limiting amplifier(LA), and an output buffer. The TIA exploits the inverter input configuration with a resistive feedback for low noise and power consumption. It is cascaded by an additional differential amplifier and a DC-balanced buffer to facilitate the following LA design. The LA consists of five gain cells, an output buffer, and an offset cancellation circuit. The proposed optical receiver demonstrates $91dB{\Omega}$ transimpedance gain, 1.55 GHz bandwidth even with the large photodiode capacitance of 320 fF, 16 pA/sqrt(Hz) average noise current spectral density within the bandwidth (corresponding to the optical sensitivity of -21.6 dBm for $10^{-12}$ BER), and 40 mW power dissipation from a single 1.8-V supply. Test chips occupy the area of $1.35{\times}2.46mm^2$ including pads. The optically measured eye-diagrams confirms wide and clear eye-openings for 2.5-Gb/s operations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.5
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• pp.515-525
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• 2014

In this paper, we present a design and implementation of a Voltage-tuned Planar Composite Resonator Oscillator(Vt-PCRO) with a low phase noise. The designed Vt-PCRO is composed of a resonator, two phase shifters, and an amplifier. The resonator is designed using a dual mode SIW(Substrate Integrated Waveguide) resonator and has a group delay of about 40 nsec. Of the two phase shifters (PS1 and PS2), PS1 with a phase shift of $360^{\circ}$ is used for the open loop gain to satisfy oscillation condition without regard to the electrical lengths of the employed microstrip lines in the loop. PS2 with a phase shift of about $70^{\circ}$ is used to tune oscillation frequency. The amplifier is constructed using two stages to compensate for the loss of the open loop. Through the measurement of the open loop gain, the tune voltage of the PS1 can be set to satisfy the oscillation condition and the loop is then closed to form the oscillator. The oscillator with a oscillation frequency of 5.345 GHz shows a phase noise of -130.5 dBc/Hz at 100 kHz frequency offset. The oscillation power and the electrical frequency tuning range is about 3.5 dBm and about 4.2 MHz for a tuning voltage of 0~10 V, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1034-1046
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• 2013

In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.599-604
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• 2004

The LTCCs (Low-Temperature Co-fired Ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$＜90$0^{\circ}C$ are required. In this study, BaO-N $d_2$ $O_3$-Ti $O_2$ (BNT ： 20∼40 wt％) for ceramic materials and L $a_2$ $O_3$- $B_2$ $O_3$-Ti $O_2$ (LBT ： 80∼60 wt％) for crystallizable glasses were used. The glass/ceramic composites were investigated for sintering behavior, phase evaluation, densities, interface reaction and microwave dielectric properties. It was found that the addition LBT glass frist significantly lowered the sintering temperature to below 90$0^{\circ}C$ and the densification with increasing addition LBT glass frist developed rapidly which was meant to be namely 90％ of relative density. The sintered bodies ekhibited applicable dielectric properties, namely 15 for $\varepsilon$$_{r}$,, 10000 GHz for Q＊ $f_{0}$. The results suggest that the composites have good potential as a new candidate for LTCC materials.