• Structural Engineering and Mechanics
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• 제3권1호
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• pp.75-89
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• 1995

A transition membrane element designated as CLM which has variable mid-side nodes with drilling freedoms has been presented in this paper. The functional for the linear problem, in which the drilling rotations are introduced as independent variables, has been formulated. The transition elements with variable side nodes can be efficiently used in the local mesh refinement for the in-plane structures, which have stress concentrations. A modified Gaussian quadrature is needed to be adopted to evaluate the stiffness matrices of these transition elements mainly due to the slope discontinuity of displacement within the elements. Detailed numerical studies show the excellent performance of the new transition elements developed in this study.

• 한국초전도ㆍ저온공학회논문지
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• 제21권3호
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• pp.6-12
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• 2019

Extended Drude model has been used to obtain information of correlations from measured optical spectra of strongly correlated electron systems. The optical self-energy can be defined by the extended Drude model formalism. One can extract the optical self-energy and the electron-boson spectral density function from measured reflectance spectra using a well-developed usual process, which is consistent with several steps including the extended Drude model and generalized Allen's formulas. Here we used a reverse process of the usual process to investigate the extended Drude analysis when an additional low-energy interband transition is included. We considered two typical electron-boson spectral density model functions for two different (normal and d-wave superconducting) material states. Our results show that the low-energy interband transition might give significant effects on the electron-boson spectral density function obtained using the usual process. However, we expect that the low-energy interband transition can be removed from measured spectra in a proper way if the transition is well-defined or well-known.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.2-3
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Elastomers and Composites
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• 제41권1호
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• pp.19-26
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• 2006

본 연구에서는 열화 온도가 아민 (D-230), 아마이드 (G-5022), 그리고 산무수물 (HN-2200)에 의해 경화된 에폭시 접착제의 질량변화, 유리전이온도 및 모폴로지에 미치는 영향을 고찰하였다. 실험 결과, 3가지 접착제 시편의 질량감소는 열화 온도가 증가함에 따라 증가하였다. 이는 열화 온도가 증가함에 따라 시편의 표면에서 더 많은 열화가 발생하여 시편의 질량이 감소한 것으로 판단된다. DSC 분석결과에 따르면 DGEBA/D-230과 DGEBA/G-5022 시편의 유리전이온도는 열화 온도에 따라 증가하였으며, DGEBA/HN-2200 시편의 유리전이온도는 열화온도 $150^{\circ}C$, 열화 시간 7일 이상에서 일정한 값을 나타내었다. SEM 결과에서 열화 이후의 DGEBA/G-5022 시편의 표면은 DGEBA/D-230 또는 DGEBA/HN-2200 시편보다 거친 모폴로지를 나타내었다. 이 결과는 시편의 질량 변화에서 얻은 결과와 일치하였다.

• 대한화학회지
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• 제41권4호
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• pp.175-179
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• 1997

2차원적 $K_2NiF_4$형 구조를 갖는 $Sr_{2-2x}Eu_xK_xSnO_4$의 주격자 안에 존재하는 Eu3+ 이온의 luminescence에 대한 연구를 수행하였다. $Eu^{3+}$ 이온의 $^5D_o$ → $^7F_o$ 전이에 의한 방출선은 J=0 → J=0 전이로써 $Eu^{3+}$ 이온의 4f 껍질에서 전기 이중극자 전이에 대한 Judd-Ofelt 선택규칙(selection rule)에 의하여 금지된 전이이다. 그러나 $Sr_{2-2x}Eu_xK_xSnO_4$의 Eu3+ 이온의 방출 스펙트라에서는 $^5D_o$ → $^7F_o$$^5D_o$ → $^7F_o$

• Journal of electromagnetic engineering and science
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• 제13권1호
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• pp.22-27
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• 2013

This paper describes a wideband double dipole quasi-Yagi antenna fed by a microstrip-to-slotline transition. The transition feed consists of a microstrip radial stub and a slot radial stub, each with the same angle of $90^{\circ}$ but with different radii, to achieve wideband impedance matching. Double dipoles with different lengths are utilized as primary radiation elements to enhance bandwidth and achieve stable radiation patterns. The proposed antenna has a measured bandwidth of 3.34~8.72 GHz for a -10 dB reflection coefficient and a flat gain of $6.9{\pm}0.6$ dBi across the bandwidth.

• Bulletin of the Korean Chemical Society
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• 제30권12호
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• pp.2973-2978
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• 2009

The decomposition reaction mechanism of $CH_3CF_2O$ radical formed from hydroflurocarbon, $CH_3CHF_2$ (HFC-152a) in the atmosphere has been investigated using ab-initio quantum mechanical methods. The geometries of the reactant, products and transition states involved in the decomposition pathways have been optimized and characterized at DFT-B3LYP and MP2 levels of theories using 6-311++G(d,p) basis set. Calculations have been carried out to observe the effect of basis sets on the optimized geometries of species involved. Single point energy calculations have been performed at QCISD(T) and CCSD(T) level of theories. Out of the two prominent decomposition channels considered viz., C-C bond scission and F-elimination, C-C bond scission is found to be the dominant path involving a barrier height of 12.3 kcal/mol whereas the F-elimination path involves that of a 28.0 kcal/mol. Using transition-state theory, rate constant for the most dominant decomposition pathway viz., C-C bond scission is calculated at 298 K and found to be 1.3 ${\times}$ 10$^4s{-1}$. Transition states are searched on the potential energy surfaces involving both decomposition channels and each of the transition states are characterized. The existence of transition states on the corresponding potential energy surface are ascertained by performing Intrinsic Reaction Coordinate (IRC) calculation.

• ETRI Journal
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• 제41권2호
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• pp.262-269
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• 2019

This paper introduces a low-cost, high-performance mmWave antenna array module at 77 GHz. Conventional waveguide transitions have been replaced by 3D CPW-microstrip transitions which are much simpler to realize. They are compatible with low-cost substrate fabrication processes, allowing easy integration of ICs in 3D multi-chip modules. An antenna array is designed and implemented using multilayer coupled-fed patch antenna technology. The proposed $16{\times}16$ array antenna has a fractional bandwidth of 8.4% (6.5 GHz) and a 23.6-dBi realized gain at 77 GHz.