• Journal of the Korea Society of Computer and Information
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• v.16 no.6
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• pp.1-10
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• 2011

In designing multi-core processors, interconnection delay is one of the major constraints in performance improvement. To solve this problem, the 3-dimensional integration technology has been adopted in designing multi-core processors. The 3D multi-core architecture can reduce the physical wire length by stacking cores vertically, leading to reduced interconnection delay and reduced power consumption. However, the power density of 3D multi-core architecture is increased significantly compared to the traditional 2D multi-core architecture, resulting in the increased temperature of the processor. In this paper, the floorplan methods which change the forms of vertical placement of the core and the level-2 cache are analyzed to solve the thermal problems in 3D multi-core processors. According to the experimental results, it is an effective way to reduce the temperature in the processor that the core and the level-2 cache are stacked adjacently. Compared to the floorplan where cores are stacked adjacently to each other, the floorplan where the core is stacked adjacently to the level-2 cache can reduce the temperature by 22% in the case of 4-layers, and by 13% in the case of 2-layers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.9-17
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• 1998

BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.653-655
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• 2000

Alumina-surfactant mesostructures have been synthesized with the $Al_{13}$-Keggin cation prepared by Al(N $O_3$)$_3$.9$H_2O$ solution with NaOH solution in the presence of a non-ionic surfactant at room temperature. The synthesized samples had the hexagonal structure similar to MCM-41 type materials. These samples have been characterized by X-ray diffraction and thermal analysis(TG). The samples prepared from OH/Al ratio 1.5 and 2.0 were well-crystalline mesostructures, but the sample from OH/Al ratio 2.5 was not. Also, The d$_{100}$ value decreased slightly from 38 to 36 according to the OH/Al mole ratio. These results could be explained that Keggin ion depended on the OH/Al molar ratio and pHpH

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.13 no.1
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• pp.31-40
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• 2009

In the present work transformation of dimensionless heat diffusion equation for the solution of moving boundary problems have been formulated. The formulation is based on 1-D, 2-D and 3-D, unsteady heat diffusion equations. These equations are rst turned int dimensionless form by using dimensionless quantities and their transformation was formulated in liquid and solid phases. The salient feature of this work is that during the transformation of dimensionless heat diffusion equation there arises a convective term $\tilde{v}$ which is responsible for the motion of interface in liquid as well as solid phase. In the transformed heat equation, a correction factor $\beta$ also arises naturally which gives the correct transformed flux at interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.204-209
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• 2016

The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.53-58
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• 1996

In this paper, a simple fabrication technique of an air-bridge for interconnection of isolated electrodes of microwave active and passive devices and MMIC's is proposed. The proposed air-bridge proceses are mainly combinations of thermal evaporation, positive photoresist and image reversal processes for easy lift-off of up to 2.0 .mu.m thick metal. According to the resutls of air-birdge processes, it is confirmed that air-gap and thickness of theair-bridge are about 3.5.mu.m, and 2.0.mu.m, respectively. And it is also possible to make the fine air-bridge with widths of 5~60.mu.m and post-intervals of 25~200.mu.m withot collapse. finally, GaAs power MESFET's and rectangular spiral inductors are fabricatd and measured in order to confirm of feasibility of the proposed air-bridge processes. The MAG of the fabricated power MESFET's is 10dB at 10GHz, and the inductance of the (200.mu. * 6 turns) rectangular spiral inductors 4.5 nH inX-band.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.2
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• pp.52.2-52.2
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• 2018

The shape of a galaxy's spectral energy distribution ranging from ultraviolet (UV) to infrared (IR) wavelengths provides crucial information about the underlying stellar populations, metal contents, and star-formation history. Therefore, analysis of the SED is the main means through which astronomers study distant galaxies. However, interstellar dust absorbs and scatters UV and optical light, re-emitting the absorbed energy in the mid-IR and Far-IR. I present the updated 3D Monte-Carlo radaitive transfer code MoCafe to compute the radiative transfer of stellar, dust emission through a dusty medium. The code calculates the emission expected from dust not only in pure thermal equilibrium state but also in non-thermal equilibrium state. The stochastic heating of very small dust grains and/or PAHs is calculated by solving the transition probability matrix equation between different vibrational, internal energy states. The calculation of stochastic heating is computationally expensive. A pilot study of radiative transfer models of SEDs in clumpy (turbulent), galactic environments, which has been successfully used to understand the Calzetti attenuation curves in Seon & Draine (2016), is also presented.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.26-34
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• 1997

To develop ultrathin gate oxide for ULSI MOSFETs, for the first time, we fabricated MOS capacitors with 65.angs. thick initial oxide grown by high pressure oxidation (HIPOX) at 700.deg. C in 5 atmosphere $O_{2}$ ambient and then followed by rapid thermal nitridation (RTN) in N$_{2}$O ambient. The dielectric breakdown fields of the initial HIPOX oxide are 13.0 MV/cm and 13.8MV/cm for negative and positive gate bias, respectively and are dependent on nitridation temeprature and time.The lifetimes of the HIPOX oxides extractd by TDDB method are 1.1*10$^{8}$ sec and 3.4 * 10$^{9}$ sec for negative and positive stress current, respectively. The lifetime of the HIPOX oxide dfor negative stress current increases with nitridation time in N$_{2}$O ambient at 1100.deg.C, reaching maximum value stress curretn increases with nitridation time in N$_{2}$O ambient at 1100.deg. C reacing maximum value of 1.2*10$^{9}$ sec for 30 sec of nitridation time, and then subsequently decreases at the longer nitridation time. The lifetimes of the nitrided-HIPOX oxides are longer than 10 years when nitridations are carried out longer than about 50 sec and 12 sec at 1000.deg. C, and 1100.deg. C, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.7A
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• pp.786-793
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• 2004

Autonomous data rate control scheme of current IxEV-DO uplink networks can not supper the various QoS requirements of heterogeneous traffics nor hold rise-over-thermal OtoT) constraints. In this paper, an uplink resource management scheme called the modified weighted g-fair (MWGF) scheduler with RoT filling is proposed and evaluated for heterogeneous traffics in cdma2000 type uplink networks. The proposed scheme belongs to a family of centralized resource management schemes and offers QoS guarantee by using priority metrics as well as lower system loading by holding RoT constraints using RoT filling method. With some case-study simulations, the proposed algorithms shows lower average delays of real time users compared to that of autonomous rate control by 29 - 40 ％. It also shows the 1.0 - 1.3 dB lower received RoT level than autonomous rate control schemes, leading to lower network loading.