• Journal of Korea Technology Innovation Society
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• v.3 no.3
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• pp.1-17
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• 2000

This paper shows the institutional limits of technological innovation at the railway package service, that is the limits of introducing the package express system. The railway package service, owned by government and operated by D company, has been suffered severe operating loss since early 1990's. The package express system supported by information network and co-working with inner city quick service might be an solution for the railway package service. But there are several obstacles such as labor union and the rigidities of the Korean National Railroad of government agency.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.521-522
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• 2012

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.02a
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• pp.139-151
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• 2006

[ $\bullet$ ] 3D is proliferating in all package types $\bullet$ Thin packages challenge all assembly technologies $\bullet$ Package assembly and test are closely coupled and design for testability is imperative to success

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.91-95
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• 2007

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.310-314
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• 2008

Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.12
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• pp.5716-5720
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• 2012

To expand the use of three dimensional(3D) product modelling in the army, we have analyzed military technical data management system, as well as the military guidelines for the unique format and content of technical data package. Because traditional munition sector is based on the machinery and equipment industry, they have usually applied two dimensional(2D) drawings to prepare a design and to make a product. For that reason, there is no provision for 3D product modelling as a technical data package in the military guideline. In this study, we proposed an improvement scheme for the vitalization of 3D product modelling in the army not only in terms of related guideline but also military technical data management system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1228-1238
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• 2012

In this paper, we design, fabricate and measure two kinds of high-frequency packages for K-band CMOS FMCW radar chips using RF via structures. The packages are fabricated with the conventional PCB process and LTCC process. The design centering of the packages is performed at 24 GHz and impedance variation caused by the wire bonding and RF via structure is fully evaluated using 3D electromagnetic simulation. The RF via structure with characteristic impedance of $50{\Omega}$ is used to reduce impedance mismatch loss. Two kinds of test packages with back-to-back connected RF paths are fabricated and measured for the design verification of the PCB-based package and LTCC package. Their measured results show an insertion loss of less than 0.4 dB at 24 GHz and less than 0.5 dB for 20~29 GHz. The measured return loss is less than -13 dB for the PCB-based package and less than -15 dB for the LTCC package in the frequency band, but the return loss of the package itself is predicted to be better than that of the test package by about 5 dB, because the ripples of the back-to-back connection typically degrade the return loss by 5 dB or more.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.94-100
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• 1994

By using the RAPHAEL 3D inductance calculation program RI3, the PGA package inductance values of INTEL i486 microprocessor have been extracted. The lead frame layouts are drawn using the mentor Boardstation and the output files are converted into the RI3 program input format of RAPHAEL. The power and ground planes of the PGA package are modeled y grid-line structures of single bars. The capacitance valuse of signal lines have been clalculated by using the RAPHAEL 2D/3D capacitance extraction program. The extraced L, C, R values have been converted into the SPICE netlist formats with lumped circuit model for future use in the signal ingegrity analysis.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.119-123
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• 2001

In this paper, a new structure and fabrication method for the wafer level package(WLP) is presented. A packaged VLSI chip is encapsulated by a parylene(which is a low k material) layer as a dielectric layer and is molded by SUB photo-epoxy with dielectric constant of 3.0 at 100 MHz. The electrical parameters (R, L, C) of package traces are extracted by using the Maxwell 3-D simulator. Based on HSPICE simulation results, the proposed wafer level package can operate for frequencies up to 20GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.182-188
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• 2004

We demonstrate a $2.1\;{\times}\;1.0\;{\times}\;0.1cm^3$ sized compact transmitter using LTCC System-in-Package (SiP) technology for 60GHz-band wireless communication applications. For low-attenuation characteristics and resonance suppression of the SiP, we have proposed and demonstrated a coplanar double wire-bond transition and novel CPW-to-stripline transition integrating air-cavities as well as novel air-cavities embedded CPW line. The fabricated transmitter achieves an output of 13dBm at a RF frequency of 62GHz, an IF frequency of 2.4GHz, and a LO frequency of 59.6GHz. The up-conversion gain is 11dB, while the LO signal is suppressed with the image rejection mixer below -21.4dBc, and the image and spurious signals are also suppressed below -31dBc.