• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.4
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• pp.643-652
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• 1989

The purpose of this research is to analyze the impact behavior of beam-like laminates due to the transverse impact of a steel ball according to the changes of stacking sequence and aspect ratio. For this purpose, it is carried out the dynamic finite element analyses using the modified beam theory for laminates and the first order shear deformation plate theory. The results of these analyses are compared with those of experimental impact tests. The composite materials are composed of [0.deg./45.deg./0.deg./-45.deg./0.deg.]$_{2S}$ and [90.deg./45.deg./90.deg./-45.deg./90.deg.]$_{2S}$ stacking sequences and have 4.5 t * 5(10, 20 & 30)w * 200(300)l(mm)dimensions. In all analyses, the specimens are clamped at both ends.cimens are clamped at both ends.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.453-456
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• 1998

The electrical properties of $Si_{1-x}Ge_{x}$ samples have been investigated. The sample structures were grown by MBE (molecular geam epitaxy) with Ge mole-fraction of x=0.0, x=0.05, x=0.1, and x=0.2. To examine the influence of the thermal processing, the $O_{2}$ and N$_{2}$ process were performed at 800[.deg. C] and 900[.deg. C], respectively. After this thermal process, hall measurements have been done over a wide range of the ambient temperature between 320[.deg. K] and 10[.deg. K] to find the temperature dependence using the comparessed-He gas system. The Ge-rich layer has been formed at the $SiO_{2}$/SiGe interface and it has an effect on the hall mobility. And it has been found that hall mobility was increased by the $N_{2}$ annealing process comparing with dry oxidation process at both 800[.deg.C] and900[.deg. C].

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.61-67
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• 1997

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.215-223
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• 1990

Y-Ba-Cu-O계 고온 초전도체를 소결, 소결+HIP encapsulation방법으로 각각 제작하였다. 소결은 900.deg.C~960.deg.C에서 하였으며 소결시편의 일부는 HIP처리 하였는데 이때 HIP조건은 150MPa Ar압력에서 800.deg.C, 30min이었다. HIP시편의 상대밀도는 90%~93%의 밀도를 갖는 소결시편보다 5%~8% 증가하였다. 열처리 조건에 따른 x-ray 회절분석은 사방정-정방정 상변태를 보여주었다. 임계온도(Tc)는 91.deg.k 에서 전기비정항이 급격히 감소하기 시작하여 89.deg.k에서 완전히 0이 되었으며 전이폭은 3.deg.k내로 매우 좁았다. 임계전류밀도(Jc)는 소결시편의 경우 전형적인 ~159A/$cm^{2}$의 값을 보였으나 HIP처리 후 ~89A/$cm^{2}$로 감소했기 때문이라 생각하였다. 경도와 인성은 각각 38GPa과 2.9MPam$^{1}$2/로 증가하였다.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.737-743
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• 1995

Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.620-626
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• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• YAKHAK HOEJI
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• v.6 no.1
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• pp.1-4
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• 1962

A new tannin, polygagallin, related to acertannin, is isolated from air-dried leaves of Acer ginnala Max. as prismatic crystals with 1/2 H$_{2}$O per mole, m.p.154-155.deg. and [.alpha.]$_{D}$$^{29}$ +43.79.deg. C. Polygagllin gives hexaacetate, m.p.164.5.deg. C, [.alpha.]$_{D}$$^{28}$ +42.deg. C, on treating with anhydroacetic acid and on treating with diazomethane, gives trimethyl ether, m.p.176.deg. C, [.alpha.]$_{D}$$^{22}$ +53.43, which yields triacetate, m.p.160.5.deg. C, [.alpha.]$_{D}$$^{22}$ + 132.5.deg. C, on acetylation and is not attacked by periodate. On hydrolysis, trimethoxypolygagallin yields one mole of polygalitol and that of trimethoxygallic acid. By the above results polygalallin has been established as 3-galloylpolygalito.ygalito.galallin has been established as 3-galloylpolygalito.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.9
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• pp.2365-2372
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• 1995

The objective of this study is to get the basic data for the development of fluidized bed combustor. For this purpose, various rake angles(.theta.=20.deg., 25.deg., 30.deg., 35.deg.) of finned tubes and a smooth tube were installed horizontally in the fluidized bed combustor of 410*250mm. The effect of fluidized bed temperature, superficial velocity in bed, size of bed materials, rake angle of finned tubes on the heat transfer coefficient was experimentally investigated. The following results were obtained. (1) Under the fluidized bed temperature(750.deg. C-900.deg. C), and the gas velocity in bed(1.1-2.8m/sec), The highest heat transfer coefficient was measured with the rake angle of finned tubes was .theta.=25.deg. and .theta.=35.deg. for the average fluidized material particle size of 1.22mm and 1.54mm, respectively. Generally, the heat transfer coefficient of finned tubes is 1.4 to 2.4 times larger than that of smooth tubes. (2) The size of bed materials influences the rake angle of finned tubes which can have the highest heat transfer coefficient. As the temperature in bed gets higher, the effect of the rake angle of finned tubes on the heat transfer coefficient becomes greater.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.1
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• pp.9-19
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• 1989

The impact stress and wave propagation of graphite/epoxy and glass/epoxy laminates subjected to the transverse low-velocity impact of steel balls are investigated theoretically. A plate finite element model based on Whitney and Pagano's theory for the analysis of heterogeneous and anisotropic plates taking into account of the transverse shear deformation is used for the theoretical investigation. This model is in conjuction with static contact laws. The basic element is a four-node quadrilateral with the five degrees-of-freedom per node. The reduced integration technique is used for shear locking associated with low-order function in application to thin plates. These two materials are composed of [0.deg./45.deg./0.deg./-45.deg./0.deg.]$_{2S}$ and [90.deg./45.deg./90.deg./-45.deg./90.deg.]$_{2S}$ stacking sequences and have clamped-clamped boundary conditions. Finally, the present results are compared with an existing solution and wave propagation theory and then impact stress and wave propagation phenomena are investigated.gated.