• Title/Summary/Keyword: 24GHz

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Implementation of Passive Elements Applied LTCC Substrate for 24-GHz Frequency Band (24 GHz 대역을 위한 LTCC 기판 적용된 수동소자 구현)

  • Lee, Jiyeon;Ryu, Jongin;Choi, Sehwan;Lee, Jaeyoung
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.81-88
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    • 2021
  • In this paper, by applying LTCC substrate, the library of the passive elements is implemented. And it can be used in 24 GHz circuits. Depending on how to use it to the circuit, it is required large value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 24-GHz. By solving the limit, this paper devised passive elements classified for the DC and the high-frequency domain. The basic structure is suitable for low frequency under 1~2 GHz like DC. The microstrip λ/8 length stub structure is proposed to use for high-frequency like 24-GHz. The open and short stub structure operate as a capacitor and inductor respectively, also they have their impedances. Through their impedances, we can extract the value with the impedance-related equation. In this paper, the proposed passive elements are produced with the permittivity 7.5 LTCC substrate, the basic structure which are available in the DC constituted a library of capacitance of 2.35 to 30.44 pF and inductance of 0.75 to 5.45 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.44 to 2.89 pF and inductance of 0.71 to 1.56 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It will be an alternative to the passive elements that it is possible to integrate with the operation circuit of radar module for the frequency 24-GHz.

24 GHz Microstrip Patch Array Antenna for High Sensitivity EM Sensor (고감도 EM 센서용 24 GHz 마이크로스트립 패치 배열 안테나)

  • Jung, Young-Bae;Jung, Chang-Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1116-1120
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    • 2010
  • Low cost patch array antenna for high sensitivity electromagnetic(EM) sensor is presented. The operating frequency band of the antenna is 24.05~24.25 GHz. Array structure is the symmetrical pattern by Chebyshev polynomial and the feed point is located in the middle of the array. Also, the gain of the array antenna can be increased by the side wings which are connected with the ground plane. It is proved through simulation and the measurement results that the operating frequency and the side-lobe level(SLL) are rarely changed when the inclined angle of the side wings is varied.

A Design of 77 GHz LNA Using 65 nm CMOS Process (65 nm CMOS 공정을 이용한 77 GHz LNA 설계)

  • Kim, Jun-Young;Kim, Seong-Kyun;Cui, Chenglin;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.9
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    • pp.915-921
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    • 2013
  • This work presents a 77 GHz low noise amplifier(LNA) for automotive radar systems using 65 nm RF CMOS process. The LNA is composed of three stage common source amplifiers and includes transmission line matching networks. To reduce the time for three dimensional EM simulation, we optimize the transmission line impedance matching network using a pre-built EM library. The proposed compact simulation technique is confirmed by measurement results. The peak gain of the LNA is 10 dB at 77 GHz and input/output return losses are below -10 dB around the design frequency.

A 100~110 GHz LNA and A Coupler Using Standard 65 n CMOS Process (상용 65 n CMOS 공정을 이용한 100~110 GHz 저잡음 증폭기와 커플러)

  • Kim, Jihoon;Park, Hongjong;Kwon, Youngwoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.3
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    • pp.278-285
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    • 2013
  • In this paper, a 100~110 GHz LNA and A coupler using standard 65 n CMOS process is presented. The LNA consists of three common source FET stages. A few layout types are considered to get high gain characteristic of unit common source cell. Also, optimized performance to achieve low noise characteristic and enough gain. Coupler is composed of broadside coupler using multimetal in CMOS fabrication. In the coupler, the metal strip to meet density rule is used, and the coupler is designed with consideration of the metal strip to function properly. Gain of fabricated LNA is 5.64 dB at 100 GHz and 6.39 dB at 110 GHz. Bandwidth is over 10 % and noise figure is 11.66 dB at 100 GHz. Fabricated coupler has shown insertion loss of 2~3 dB at 100~110 GHz band. Magnitude mismatch of coupler is below 1 dB and phase mismatch of coupler is below $5^{\circ}$.

Distance Sensing of Moving Target with Frequency Control of 2.4 GHz Doppler Radar (2.4 GHz 도플러 레이다의 주파수 조정을 통한 이동체 거리 센싱)

  • Baik, Kyung-Jin;Jang, Byung-Jun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.152-159
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    • 2019
  • In general, a Doppler radar can measure only the velocity of a moving target. To measure the distance of a moving target, it is necessary to use a frequency-modulated continuous wave or pulse radar. However, the latter are very complex in terms of both hardware as well as signal processing. Moreover, the requirement of wide bandwidth necessitates the use of millimeter-wave frequency bands of 24 GHz and 77 GHz. Recently, a new kind of Doppler radar using multitone frequency has been studied to sense the distance of moving targets in addition to their speed. In this study, we show that distance sensing of moving targets is possible by adjusting only the frequency of a 2.4 GHz Doppler radar with low cost phase lock loop. In particular, we show that distance can be sensed using only alternating current information without direct current offset information. The proposed technology satisfies the Korean local standard for low power radio equipment for moving target identification in the 2.4 GHz frequency band, and enables multiple long-range sensing and radio-frequency identification applications.

A Study on Characteristics According to Variation of the Radiator Structure and the Feeder Branch angle of 1×6 Array Patch Antenna (1×6배열 패치 안테나의 복사기 구조와 급전선 브랜치 각도 변화에 따른 특성 연구)

  • Kang, Sang-Won;Chang, Tae-Soon;Choe, Gwang-Je
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.2
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    • pp.177-184
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    • 2018
  • In this paper, we analyze the characteristics of the antenna by changing the structure of the radiator and the angle of the branch of the array patch antenna. First, the structure of the radiator was changed from the rectangular patch to a hexagonal patch, a triangular patch. Secondly, we changed the angle of the feeder branch to $5^{\circ}$, $10^{\circ}$, $15^{\circ}$, $20^{\circ}$. When the branch angle is $10^{\circ}$, the measured 10dB frequency band is 23.38 GHz-24.19GHz and the bandwidth is 810MHz. The fabricated antenna has a gain of 9.65-10.06dBi at 24.05 GHz. The beam width of the main lobe is $12^{\circ}$, and the antenna size is $70{\times}36mm^2$. In addition to the rectangular patch, it is possible to maintain the performance by using patches of other shapes, and it is confirmed that by changing the feeder branch at various angles, it is possible to reduce the substrate size and contribute to diversity in the fabrication of the array antenna.

Fabrication of GaN Transistor on SiC for Power Amplifier (전력증폭기용 SiC 기반 GaN TR 소자 제작)

  • Kim, Sang-Il;Lim, Byeong-Ok;Choi, Gil-Wong;Lee, Bok-Hyung;Kim, Hyoung-Joo;Kim, Ryun-Hwi;Im, Ki-Sik;Lee, Jung-Hee;Lee, Jung-Soo;Lee, Jong-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.128-135
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    • 2013
  • This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

Study on Millimeter Wave Power Amp Employing PBG (PBG를 이용한 밀리미터웨이브 대역 고출력 증폭기에 대한 연구)

  • 임석순;서철헌;김태원;박규호;송희석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.1
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    • pp.41-46
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    • 2003
  • In this paper, We designed the millimeter wave power amplifier employing PBG. The amplifier has the bandwidth from 24.6 GHz to 24.75 GHz. For improvement of the Linearity and the PAE of the amplifier, PBG was designed to suppress the 2nd harmonic of the Amplifer. The Proposed PBG have smaller area and better rejection characteristic than conventional PBG structure. The fabricated PBG shows 35 dB or more of rejection characteristic at the 2nd harmonic band of the amplifier. The amplifier has balanced structure having lange coupler which means better input$.$output return loss and higher output power.