• Title/Summary/Keyword: 2.4GHz

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Internal Hook-shaped Patch Antenna for Multiband Wireless USB Dongle Applications (다중대역 무선 USB 동글용 내장 Hook형 안테나)

  • Jeong, Seong-Jae;Hwang, Keum-Cheol;Shin, Jae-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.11
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    • pp.91-96
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    • 2010
  • In this paper, an internal USB dongle antenna with a circular hook-shaped patch is proposed. The proposed antenna comprises of a circular hook-shaped patch and a monopole stub. The proposed antenna with the dimension of $10mm{\times}50mm{\times}0.8mm$ was fabricated on commercial FR-4 substrate with a dielectric constant of 4.6 and tangent loss of 0.025. The designed antenna exhibits three different resonant bandwidths, 2.4 GHz-2.5 GHz, 3.4 GHz-3.6 GHz, and 5.15 GHz-5.825 GHz. The measured radiation patterns are omni-directional at measured frequencies. Therefore, the proposed antenna is suitable for wireless USB dongle antenna that can support multiband wireless services such as WLAN, WiMAX and Bluetooth.

Design and Fabrication of Dualband PIFA for size reduction (사이즈 감소를 위한 이중대역 PIFA 안테나 설계 및 제작)

  • Lim Dong-Cheol;Park Hyo-Dal
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.9A
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    • pp.900-905
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    • 2006
  • In this paper, PIFA antenna for $2.40{\sim}2.482GHz\;and\;5.75{\sim}5.85GHz$ is designed, fabricated, and measured. The prototype consist of hair-pin and short-pin. To obtain suitable bandwidth, the form layer is inserted between ground plane and substrate. Important parameters in the design are hair-pin length, width, position, air-gap height, and feed point position. From these parameters optimized, a PIFA antenna is fabricated and measured. The measured results of the antenna are obtained as follows results. The resonant frequency of the fabrication PIFA antenna is 2.37GHz and 5.86GHz bandwidth for approximately 90MHz with 350MHz(VSWR<2.0) and the gain is $1.91{\sim}4.37dBi$. H-plan and E-plan at 2.4GHz and 5.8GHz are shown as $52.83^{\circ},\;85.90^{\circ}\;and\;68.68^{\circ},\;52.143^{\circ}$ respectively.

Design of a Dual-Band Switch with 2.4[GHz]/5.8[GHz] (2.4[GHz]/5.8[GHz] 이중대역 SPDT 스위치 설계)

  • Roh, Hee-Jung
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.8
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    • pp.52-58
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    • 2008
  • Ths paper describes the Dual-band switch which was proposed new structure that could improved the specification of broadband and designed by the optimized structure through simulation. The Dual-band switch with 2.4[GHz]/5.8[GHz] that can apply to 802.11a/b/g system that is commercialized present was studied to get a new structure with higher power, high isolation. The transmitter of switch was designed to operate a parallel switching element with stack structure of two FET. The receiver designed to have asymmetry structure that insert series FET in addition to basic serial/parallel FET. SPDT(Single Pole Double Throw) Tx/Rx FET switch is a device that can do switching from a port of input to two port of output. The fabricated SPDT switch has the characteristic of insertion loss of a below -3[dB] form DC to 6[GHz] and the isolation of a below -30D[dB](Rx mode).

10 GHz TSPC(True Single Phase Clocking) Divider Design (10 GHz 단일 위상 분주 방식 주파수 분배기 설계)

  • Kim Ji-Hoon;Choi Woo-Yeol;Kwon Young-Woo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.8 s.111
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    • pp.732-738
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    • 2006
  • Divide-by-2 and divide-by-4 circuits which can operate up to 10 GHz are designed. A design method used in these circuits is the TSPC(True Single Phase Clocking) topology. The structure of the TSPC dividers is very simple because they need only a single clock and purely consist of smalt sized cmos devices. Through measurements, we find the fact that in proportion to the bias voltage, the free running frequency increases and the operation region also moves toward a higher frequency region. For operating conditions of bias voltage $3.0{\sim}4.0V$, input power 16dBm and dcoffset $1.5{\sim}2.0V$, 5 GHz and 2.5 GHz output signals divided by 2 and 4 are measured. The layout size of the divide-by-2 circuit is about $500{\times}500 um^2$($50{\times}40um^2$ except pad interconnection part).

Design of Stacked Circular Microstrip Antenna for Mobile Communication Base Station (이동통신 기지국을 위한 적층된 원형 마이크로스트립 안테나 설계)

  • Kim, Nam-Hyeon;No, Gwang-Hyeon;Gang, Yeong-Jin
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.37 no.2
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    • pp.83-90
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    • 2000
  • In this paper, a stacked circular-disk microstrip 1${\times}$4 array antenna was designed and manufactured and tested to apply in next generation mobile communication, on IMT-2000 system(up-link: 1.885 GHz∼2.025 GHz, down-link: 2.11 GHz∼2.2 GHz) base station which has dual frequency, broadband and high-gain characteristics. The experimental results are as follows : resonant frequency of 1.885 GHz and 2.178 GHz VSWR (1.064 , 1.432), return loss (-30.19 dB , -24.99 dB), band width (VSWR<2) are 402 MHz, -3dB beam width at radiation pattern are ${\alpha}$E-16.8$^{\circ}$, ${\alpha}$H-69$^{\circ}$(1.885 GHz) and ${\alpha}$E-l5.2$^{\circ}$, ${\alpha}$H-51.5$^{\circ}$(2.178 GHz), gain(13.7 dBi∼15.21 dBi).

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Fully Embedded 2.4GHz Compact Band Pass Filter into Multi-Layered Organic Packaging Substrate

  • Lee, Seung-J.;Lee, Duk-H.;Park, Jae-Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.39-44
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    • 2008
  • In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

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Phase Locked Loop Sub-Circuits for 24 GHz Signal Generation in 0.5μm SiGe HBT technology

  • Choi, Woo-Yeol;Kwon, Young-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.4
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    • pp.281-286
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    • 2007
  • In this paper, sub-circuits for 24 GHz phase locked 100ps(PLLs) using $0.5{\mu}m$ SiGe HBT are presented. They are 24 Ghz voltage controlled oscillator(VCO), 24 GHz to 12 GHz regenerative frequency divider(RFD) and 12 GHz to 1.5 GHz static frequency divider. $0.5{\mu}m$ SiGe HBT technology, which offers transistors with 90 GHz fMAX and 3 aluminum metal layers, is employed. The 24 GHz VCO employed series feedback topology for high frequency operation and showed -1.8 to -3.8 dBm output power within tuning range from 23.2 GHz to 26 GHz. The 24 GHz to 12 GHz RFD, based on Gilbert cell mixer, showed 1.2 GHz bandwidth around 24 GHz under 2 dBm input and consumes 44 mA from 3 V power supply including I/O buffers for measurement. ECL based static divider operated up to 12.5 GHz while generating divide by 8 output frequency. The static divider drains 22 mA from 3 V power supply.

60 GHz CMOS SoC for Millimeter Wave WPAN Applications (차세대 밀리미터파 대역 WPAN용 60 GHz CMOS SoC)

  • Lee, Jae-Jin;Jung, Dong-Yun;Oh, Inn-Yeal;Park, Chul-Soon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.670-680
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    • 2010
  • A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

Performance Improvement of Radar Target Classification Using UWB Measured Signals (광대역 레이다 측정 신호를 이용한 표적 구분 성능 향상)

  • Lee, Seung-Jae;Lee, Sung-Jun;Choi, In-Sik;Park, Kang-Kuk;Kim, Hyo-Tae;Kim, Kyung-Tae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.10
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    • pp.981-989
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    • 2011
  • In this paper, we performed radar target classification for the five scale models using ultra-wideband measured signal. In order to compare the performance, the 2 GHz(2~4 GHz), 4 GHz(2~6 GHz), and 6 GHz(2~8 GHz) bandwidth were used. Short time Fourier transform(STFT) and continuous wavelet transform(CWT) are used for target feature extraction. Extracted feature vectors are used as input for the multi-layerd perceptron(MLP) neural network classifier. The results show that as the bandwidth is wider, the performance is better.

Dual-Band Class-F Power Amplifier based on dual-band transmission-lines (이중 대역 전송선로를 활용한 이중 대역 F급 전력 증폭기 개발)

  • Lee, Chang-Min;Park, Young-Cheol
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.4
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    • pp.31-37
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    • 2010
  • In this paper, highly efficient dual-band class-F power amplifiers(PAs) for cellular and WLAN bands are suggested and implemented. For the first step, single-band class-F amplifiers at 840MHz, 2.4GHz are designed using commercial E-pHEMT FETs. The performance of two single band PAs are as much as 81.2% of efficiency with the output power of 24.4dBm with 840MHz PA and 93.5% of efficiency with 22.4dBm from the 2.4GHz. For the dual-band class-F PA, the harmonic controlling circuit with ideal SPDT switch was suggested. The length of transmission line is variable by a SPDT switch. As a results, the operation in 840MHz showed the peak efficiency of 60.5% with 23.5dBm, while in 2.4GHz mode the efficiency was 50.9% with the output power of 19.62dBm. Besides, it is shown that the harmonic controller of class-F above 2Ghz could be implemented on the low cost FR-4 substrate.