• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• Progress in Superconductivity
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• 제3권1호
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• pp.45-48
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• 2001

We have fabricated $MgB_2$thin films on (1 1 02)$ A1_2$$O_3$substrates by using a two-step method. Amorphous B thin films were deposited by a pulsed laser deposition technique and sintered in Mg vapor at various temperatures from 800 to $950^{\circ}C$. Superconducting properties of the thin films were investigated by temperature dependences of magnetization and critical current density. Structural studies were carried out by an x-ray diffraction and a scanning electron microscope. The films fabricated at $900^{\circ}C$ showed the highest transition temperature of 39 K and critical current density of ~$10^{7}$ A/$\textrm{cm}^2$ at 15 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.322-322
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• 2010

Recently, anti-reflective films (AR) are one of the most studied parts of a solar cell since these films improve the efficiency of photovoltaic devices. Also, anti-reflection films on the textured silicon solar cells reduce the amount of reflection of the incident light, which improves the device performance due to light trapping of incident light into the cell. Therefore, we preformed two step processes to get textured Si (100) substrate in this experiment. Pyramid size of textured silicon had approximately $2{\sim}9\;{\mu}m$. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at $600^{\circ}C$ using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and $1000^{\circ}C$, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about $75{\pm}5\;nm$. The reflectance at specific wavelength can be reduced to 3% in optimum layer.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• 한국재료학회지
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• 제2권5호
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• pp.375-382
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• 1992

Composite target(MoS$i_{2.3}$)으로 부터 Mo-silicide를 형성시, 단결정 실리콘 위에 P, B$F_2$불순물(5${\times}10^{15}ions/cm^2$)과 다결정 실리콘 위에 P 불순물(5${\times}10^{15}ions/cm^2$)을 이온 주입하여 아르곤 분위기에서 급속열처리(RTA)하였다. 열처리는 600-120$0^{\circ}C$ 온도구간에서 20초간 행하였다. Mo-silicide의 특성 및 불순물의 거동은 4-point probe, X선 회절분석, SEM, SIMS, $\alpha$-step을 통해 조사하였다. 80$0^{\circ}C$에서 부터 MoS$i_2가 형성되며 열처리 온도가 증가할수록 낮은 비저항간을 갖는 안정한 MoS$i_2로 결정화가 이루어진다. 또한 열처리 동안 단결정 실리콘과 다결정 실리콘에서 Mo-silicide층으로 불순물의 내부 확산은 거의 발생하지 않았다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.283-287
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• 2017

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.61-66
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• 2010

3차원 TSV 접합 시접합 두께 및 전, 후 추가 공정 처리가 Cu-Cu 열 압착 접합에 미치는 영향을 알아보기 위해 0.25, 0.5, 1.5, 3.0 um 두께로 Cu 박막을 제작한 후 접합 전 $300^{\circ}C$에서 15분간 $Ar+H_2$, 분위기에서 열처리 후 $300^{\circ}C$에서 30분 접합 후 후속 열처리 효과를 실시하여 계면접착에너지를 4점굽힘 시험법을 통해 평가하였다. FIB 이미지 확인 결과 Cu 두께에 상관없이 열 압착 접합이 잘 이루어져 있었다. 계면접착에너지 역시 두께에 상관없이 $4.34{\pm}0.17J/m^2$ 값을 얻었으며, 파괴된 계면을 분석 한 결과 $Ta/SiO_2$의 약한 계면에서 파괴가 일어났음을 확인하였다.

• 한국재료학회지
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• 제9권2호
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• pp.168-172
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• 1999

보른이 고농도 도핑된 $\textrm{p}^{+}$-Si 영역상에서 비저항이 낮고 열적 안정성이 우수한 Co/Ti 이중막 실리사이드의 형성을 연구하였다. 본 연구에서는 Co/Ti 이중막 실리사이드는 청결한 $\textrm{p}^{+}$-Si 기판상에 Co(150${\AA}$)/Ti(50${\AA}$) 박막을 E-beam 기술로 진공증착하고 질소분위기($\textrm{10}^{-1}$atm)에서 2단계 RTA 공정(1차열처리:$650^{\circ}C$/20sec, 2차열처리:$800^{\circ}C$/20sec)을 수행하여 제작된다. 실험에서 얻어진 Co/Ti 이중막 실리사이드는 약 500${\AA}$의 균일한 두께를 갖고 18$\mu\Omega$-cm의 낮은 비저항 특성을 나타내었으며, $1000^{\circ}C$에 이르기까지 장시간 후속 열처리를 실시하여도 면저항 변화나 열응집 현상이 발생되지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.39-40
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• 2008

We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 $cm^2$/Vsandthesub-threshold swing down to 0.2V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. $Ga_2O_3$, $Al_2O_3$, $SiO_2$ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. We have manufactured the AMOLED panel with the transparent bottom gate IGZO TFT array successfully.