• Journal of electromagnetic engineering and science
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• 제7권2호
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• 식물조직배양학회지
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• 제21권1호
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• pp.29-34
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• 1994

제라니움(Pelargonium zonale hybrids, 'Pinto Scarlet') 엽조직으로부터 캘러스를 유기시킨 뒤에 이를 단세포로 만들고 여기에 세포막의 물리화학적 성질을 변화시킬 수 있는 요인들 즉 낮은 pH,고농도의 $K^{+}$ 그리고 Gh$_3$와 2,4-D를 처리한 다음 원심력을 가하여 DNA가 세포 밖으로 나을 수 있는지의 가능성을 검토했다. 음하전을 갖고 있는 DNA를 세포벽을 손상시키지 않으면서 분리해 내기 위해 사용되는 SDS의 최적농도는 300mg/L였다. pH 4.0에서 0.5 % KNO$_3$를 처리했을 경우 1,800 x g의 원심력만 가해줘도 DNA가 검출되었으나 아무런 처리도 안했을 경우는 7,300 x g가 필요했다. 또 pH 5.8 보다는 PH 4.0일때 그리고 KNO$_3$ 농도에 따라 더 많은 DNA가 이동된 것이 검출되었으며 GA$_3$는 1.5mg/L 2,4-D는 2.0 mg/L를 한시간 처리했을 때가 그 이상 또는 그 이하인 경우 보다 더 효과적이었다. 이상의 사실을 종합해 보면 원심력에 의해서 DNA를 세포벽 밖으로 유출시킬 수 있으며 수소이온과 K+ 그리고 GA$_3$나 2,4-D처리가 DNA 이동을 부가적으로 촉진시킨다고 말할 수 있다.

• 한국전자파학회논문지
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• 제10권2호
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• pp.169-179
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• 1999

본 논문에서는 선형성이 우수한 MIC형태의 GaAs MESFET 저항성 혼합기를 설계하였다. 설계된 저항성 혼합기는 채널저항을 이용하기 위해 게이트단에만 바이어스 전압을 인가하였으며 LO 신호를 게이트단에 입 력시키고 드레인단에는 LO- RF간의 적절한 격리도를 얻기 위하여 삽입된 7 -jXlle hairpin 대역통과 여파기를 통하여 RF 신호를 가하여서 소오스단에서 단락회로와 저역통과 여파기를 통해 IF 신호를 얻는 것이다 .. LO 신호와 RF 신호에 대한 간략화된 등가회로를 추출하여 변환손실을 계산하였으며 하모닉 발란스 해석의 결과 와 비교하였다. 제작된 S-band 수신용 혼합기의 변환손실은 7 -jXlle hairpin 대역통과 여파기의 3.0-3.4 dB 정 도의 삽입손실을 고려하여 8.2 -10.5 dB로 얻을 수 있었고, 왜곡 특성에서 IP3in는 26.5 dBm의 선형적인 특 성을 Vg=-0.85~-1.0 V에서 얻을 수 있었다.

• Journal of Magnetics
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• 제19권2호
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• pp.126-129
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• 2014

We report the crystallographic and magnetic properties of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ by means of X-ray diffractometer (XRD), a superconducting quantum interference device (SQUID) magnetometer, and a M$\ddot{o}$ssbauer spectroscopy. In particular, $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was studied by M$\ddot{o}$ssbauer analysis for evidence of spin reorientation. The chalcogenide material $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was fabricated by a direct reaction method. XRD analysis confirmed that $Ni_{0.3}Fe_{0.7}Ga_2S_4$ has a 2-dimension (2-D) triangular lattice structure, with space group P-3m1. The M$\ddot{o}$ssbauer spectra of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ at spectra at various temperatures from 4.2 to 300 K showed that the spectrum at 4.2 K has a severely distorted 8-line shape, as spin liquid. Electric quadrupole splitting, $E_Q$ has anomalous two-points of temperature dependence of $E_Q$ curve as freezing temperature, $T_f=11K$, and N$\acute{e}$el temperature, $T_N=26K$. This suggests that there appears to be a slowly-fluctuating "spin gel" state between $T_f$ and $T_N$, caused by non-paramagnetic spin state below $T_N$. This comes from charge re-distribution due to spin-orientation above $T_f$, and $T_N$, due to the changing $E_Q$ at various temperatures. Isomer shift value ($0.7mm/s{\leq}{\delta}{\leq}0.9mm/s$) shows that the charge states are ferrous ($Fe^{2+}$), for all temperature range. The Debye temperature for the octahedral site was found to be ${\Theta}_D=260K$.

• 전자공학회논문지D
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• 제34D권3호
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• 한국표면공학회지
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• 제43권4호
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• Bulletin of the Korean Chemical Society
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• 제19권1호
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• pp.63-67
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• 1998

The synthesis and characterization of the monomeric group 13 heterocyclic thiosemicarbazone complexes $Me_2M[SC_4H_3CHNNC(S)SCH_3]$ (M=Al (2), Ga (3)) are described. Compounds 2-3 were prepared using $MMe_3$ (M=Al, Ga) in toluene with 2-thiophenecarboxaldehyde-S-methyldithiocarbazat e under anaerobic conditions. These complexes have been characterized by $^1H\;NMR,\; ^{13}C\; NMR$, elemental analyses, and single-crystal X-ray diffraction. 2 crystallizes in the monoclinic space group $P2_1/c$ with unit cell parameters a=10.2930(5) Å, b=18.564 (1) Å, c=7.3812(6) Å, V=1347.9(2) Å3, $D_{calc}=1.342\; gcm^{-3}$ for Z=4, 9281 reflections with $I_o<3{\sigma}\;(I_o),$ R1=0.0500 and wR2=0.0526. 3 crystalizes in the orthorhombic space group $P_{bca}$ with unit cell parameters a=13.340(3) Å, b=19.9070(5) Å, c=11.3690(2) Å, $V=2673.88(9)\;{\AA}^3$, $D_{calc}=1.511\; gcm^{-3}$ for Z=8, 17004 reflections with $I_o>3{\sigma}\;(I_o),$, R1=0.0480 and wR2=0.0524. Compound 3 is a monomeric gallium compound with a weak interaction between the pendant thiophene and the gallium center.

• 전자공학회논문지D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.