• ETRI Journal
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• v.42 no.5
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• pp.790-798
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• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• ETRI Journal
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• v.42 no.5
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• pp.781-789
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• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.94-104
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• 2008

In this paper, we propose a new architecture of multiplier-and-accumulator (MAC) for high speed multiplication and accumulation arithmetic. By combining multiplication with accumulation and devising a hybrid type of carry save adder (CSA), the performance was improved. Since the accumulator which has the largest delay in MAC was removed and its function was included into CSA, the overall performance becomes to be elevated. The proposed CSA tree uses 1's complement-based radix-2 modified booth algorithm (MBA) and has the modified array for the sign extension in order to increase the bit density of operands. The CSA propagates the carries by the least significant bits of the partial products and generates the least significant bits in advance for decreasing the number of the input bits of the final adder. Also, the proposed MAC accumulates the intermediate results in the type of sum and carry bits not the output of the final adder for improving the performance by optimizing the efficiency of pipeline scheme. The proposed architecture was synthesized with $250{\mu}m,\;180{\mu}m,\;130{\mu}m$ and 90nm standard CMOS library after designing it. We analyzed the results such as hardware resource, delay, and pipeline which are based on the theoretical and experimental estimation. We used Sakurai's alpha power low for the delay modeling. The proposed MAC has the superior properties to the standard design in many ways and its performance is twice as much than the previous research in the similar clock frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.149-155
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• 2015

This paper proposes 5-MS/s 10-bit digital-to-analog converter(DAC) with the improved linearity. The proposed DAC consists of a 10-bit R-2R-based DAC, an output buffer using a differential voltage amplifier with rail-to-rail input range, and a band-gap reference circuit for the bias voltage. The linearity of the 10-bit R-2R DAC is improved as the resistor of 2R is implemented by including the turn-on resistance of an inverter for a switch. The output voltage range of the DAC is determined to be $2/3{\times}VDD$ from an rail-to-rail output voltage range of the R-2R DAC using a differential voltage amplifier in the output buffer. The proposed DAC is implemented using a 1-poly 8-metal 130nm CMOS process with 1.2-V supply. The measured dynamic performance of the implemented DAC are the ENOB of 9.4 bit, SNDR of 58 dB, and SFDR of 63 dBc. The measured DNL and INL are less than +/-0.35 LSB. The area and power consumption of DAC are $642.9{\times}366.6{\mu}m^2$ and 2.95 mW, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.106-111
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• 2015

Since most reference voltage generator circuits have bi-stable characteristics, it is important to employ a proper start-up circuit to operate a reference generator in the desired state. In this paper, we propose a start-up circuit for a low voltage reference generator. This start-up circuit determines the state of the circuit reliably by measuring the current drawn by BJTs in the circuit, which is well-defined in the desired state. To measure the current using CMOS-compatible devices only, a comparator with an internal offset voltage is used. The reliability of the proposed circuit is confirmed by Monte-Carlo simulations of the start-up operation, which show that, with the proposed start-up circuit, the low voltage reference generator starts reliably with supply voltages over 850mV even in the presence of device mismatches.

• ETRI Journal
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• v.42 no.4
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• pp.480-490
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• 2020

More than 42 000 fires occur nationwide and cause over 2500 casualties every year. There is a lack of specialized equipment, and rescue operations are conducted with a minimal number of apparatuses. Through-the-wall radars (TTWRs) can improve the rescue efficiency, particularly under limited visibility due to smoke, walls, and collapsed debris. To overcome detection challenges and maintain a small-form factor, a TTWR system-on-chip (SoC) and its architecture have been proposed. Additive reception based on coherent clocks and reconfigurability can fulfill the TTWR demands. A clock-based single-chip infrared radar transceiver with embedded control logic is implemented using a 130-nm complementary metal oxide semiconductor. Clock signals drive the radar operation. Signal-to-noise ratio enhancements are achieved using the repetitive coherent clock schemes. The hand-held prototype radar that uses the TTWR SoC operates in real time, allowing seamless data capture, processing, and display of the target information. The prototype is tested under various pseudo-disaster conditions. The test standards and methods, developed along with the system, are also presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.168-174
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• 2012

This paper describes a novel global on-chip interconnect scheme, in which a one UI-delayed symbol as well as the current symbol is sent for easing the sensing operation at receiver end. With this approach, the voltage swing on the channel for reliable sensing can be reduced, resulting in performance improvement in terms of power consumption, peak current, and delay spread due to PVT variations, as compared to the conventional repeater insertion schemes. Evaluation for on-chip interconnects having various lengths in a 130 nm CMOS process indicated that the proposed on-chip interconnect scheme achieved a power reduction of up to 71.3%. The peak current during data transmission and the delay spread due to PVT variations were also reduced by as much as 52.1% and 65.3%, respectively.

• Journal of IKEEE
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• v.16 no.3
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• pp.265-273
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• 2012

Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.219-225
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• 2012

A low-power, low-noise pre-amplifier for digital hearing-aid application is designed. This pre-amplifier amplifies single-ended signal from an electret microphone, and produces differential output to be delivered to an ADC. It has a variable gain of 3.6, 7.2, 14.4 and 28.8 with a bandwidth between 100Hz~10kHzon. The measurement results show 85 dB of SNR, 0.05 % of harmonic distortion and $200{\mu}W$ of power consumption with 1.2V supply.