• Title/Summary/Keyword: 1200 V.

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Fabrication of 1.2kV/120kA Reverse Switched-on Dynistor for Pulse power purpose (1.2kV/120kA급 펄스파워용 역점호 Dynistor 제작)

  • Kim, S.C.;Kim, E.D.;Park, J.M.;Kim, N.K.
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1533-1535
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    • 2000
  • The design and fabrication technologies of pulse power reversely switched-on dynistor have been developed 1200V/120kA pulse power reversely switched-on dynistor device have been designed by analytically and numerically using commercial modeling S/W The important characteristics of reversely switched-on dynistors are breakover voltage $V_{BO}$, commutative peak voltage before steady state $V_m$, on-state voltage in steady state $V_o$, turn-off time $t_q$, dV/dt capability.

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The Effect of Pressure on the Solvolysis Reaction of p-Nitrobenzyl Chloride in Binary Mixture of Ethanol-Water (에탄올-물 혼합용매내에서의 p-니트로벤질클로라이드의 가용매 분해반응에 대한 압력의 영향)

  • Oh Cheun Kwun;Jeong Rim Kim;Jee Cheol Ryu
    • Journal of the Korean Chemical Society
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    • v.25 no.3
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    • pp.152-159
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    • 1981
  • The rates of solvolysis for p-nitrobenzyl chloride have been measured by the electric conductivity method in aqueous ethanol from 0.0 to 0. 5 mole fraction of ethanol under various pressures up to 1200bar at 50 and $60{\circ}C$. The activation parameters, ${\Delta}V_\0^{\neq},\ {\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ are evaluated from the rate constants. The results indicated that ${\Delta}V_\0^{\neq}$ exhibits an extremum behaviors near 0.3 mole fraction of ethanol and ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ near 0.1 mole fraction of ethanol. This behaviors are discussed in terms of solvent structure variation and the pressure dependences of ${\Delta}H^{\neq},\ {\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ are also discussed individually. The signs of the pressure dependence of ${\Delta}H^{\neq}$${\Delta}S^{\neq}$ are shown to be consistent with those required by the Maxwell relationships for classical thermodynamic systems.

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Analysis of Electrical Characteristics of Dual Gate IGBT for Electrical Vehicle (전기자동차용 이중 게이트 구조를 갖는 전력 IGBT소자의 전기적인 특성 분석)

  • Kang, Ey Goo
    • Journal of IKEEE
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    • v.21 no.1
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    • pp.1-6
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    • 2017
  • IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

A Study on Optimization of the P-region of 4H-SiC MPS Diode (4H-SiC MPS 다이오드의 P 영역 최적화에 관한 연구)

  • Jung, Se-Woong;Kim, Ki-Hwan;Kim, So-Mang;Park, Sung-Joon;Koo, Sang-Mo
    • Journal of IKEEE
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    • v.20 no.2
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    • pp.181-183
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    • 2016
  • In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.

Effects of exercise on sleep EEG following caffeine administration (카페인 투여 후 운동이 수면에 미치는 효과)

  • 윤진환;이희혁
    • Journal of Life Science
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    • v.12 no.4
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    • pp.375-382
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    • 2002
  • The purpose of this experiment was to examine influence of acute exercise on nocturnal sleep which had been disrupted by caffeine(400mg$\times$3) thought the daytime. Six healthy young males aged 21.0$\times$0.2 yr with a history of low caffeine use. Subjects completed three conditions in a within-subject. At three conditions Sleep EEG were investigated: (1) nocturnal following quiet rest, (2) nocturnal sleep following the consumption of 1200mg of caffeine (3) nocturnal sleep following cycling at 60 min of 60% V $O_{2peak}$ with 1200mg of caffeine consumption. Sleep data were calculated for REM sleep, REM latency, sleep onset latency, sleep efficiency, sleep stages, SWS. Those data were analyzed using repeated-measures ANOVA of change scores. A main effect to, drug(caffeine) indicated that caffeine elicited sleep disturbance that is, TST and sleep onset latency increase and sleep efficiency and stage 4 decrease. The effects of exercise on sleep following caffeine intake generally improve sleep that is, stage 2, 3 and SWS increase and sleep onset latency decrease. A condition effect for sleep indicated sleep improvement after exercise Therefore The data supported a restorative theory of slow-wave sleep and suggest that acute exercise may be useful in promoting sleep and reducing sleep disturbance elevated by a high dose of caffeine.

A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme (Floating P-well 전압 감지 방법과 수평형 절연 게이트 바이폴라 트랜지스터(LIGBT)를 이용한 새로운 1200V 절연 게이트 바이폴라 트랜지스터(IGBT)의 보호회로)

  • Cho, Kyu-Heon;Ji, In-Hwan;Han, Young-Hwan;Lee, Byung-Chul;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.99-100
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    • 2006
  • 절연 게이트 바이폴라 트랜지스터 (Insuialed atc Bipolar Transistor : IGBT)는 높은 전류구동 능력과 높은 입력 임피던스 특성으로 인해 대전력 스위칭 소자로 널리 응용되고 있다. 특히, 대용량 모터 구동을 위해 응용되는 경우, 모터의 부하 특성상, 모터의 단락에 의한 단락 회로 (Short-circuit fault) 현상을 비롯한 클램핑 다이오드의 파손으로 인한 unclamped 유도성 부하 스위칭 (UIS) 상황에서 견딜 수 있도록 설계되어야 한다. 이를 위해, 이전 연구를 통해 Floating p-well을 600V급 IGBT에 도입함으로써 UIS 상황에서 IGBT가 견딜 수 있는 에너지(항복 에너지)륵 증가시키고 Floating p-weil 전압을 감지함으로써 단락 회로 상황에서 IGBT가 보호될 수 있도록 보호회로를 제안하고 검증하였다. 그러나 이 보호회로는 수평형 금속 산화막 반도체 전계 효과 트랜지스터 (Latcral MOSFET)로 제작됨으로써 보호회로 기능을 수행하기 위해서는 넓은 면적을 요구하였다. 또한, 정상적인 동작 상황에서 오류를 감지 (오류 감지: False detection)하는 동작으로 인해 추가적인 filter를 요구함으로써 보호회로 동작 속도를 감소시켰다. 이러한 단점을 해결하기 위해, 수평형 절연 게이트 바이폴라 트랜지스터 (Lateral IGBT : LIGBT)를 보호회로에 적용함으로써 LIGBT의 높은 전류 구동능력을 이용하여 기존 보호회로 면적의 30% 수준의 보호회로를 구현하였다. 또한, 구현된 보호회로는 오류 감지 현상을 제거함으로써 보호회로의 동작 속도를 개선하였다. 제안된 보호회로와 1200V급 IGBT는 7장의 마스크를 이용한 표준 수평형 IGBT 공정을 이용하여 제작되었으며, 특히, 전자빔 조사를 이하여 턴오프 속도를 개선함으로써 고속 스위칭에 적합하도록 최적화 되었다.

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A Study on the Optimal Design of the Transformer in the PSFB Converter (PSFB 컨버터에서 변압기 최적 설계에 관한 연구)

  • Lee, Il-Oun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.9
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    • pp.869-876
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    • 2016
  • In the Phase Shifted Full Bridge(: PSFB) converter, there are several design factors including power switches, power switches' driving circuits, transformer and inductor, and rectifier stage, etc. Among them, a key factor influencing an optimal performance of the PSFB converter is the design of transformer. Especially, its effect becomes more important in low voltage and high power applications. In this paper, a study on an optimal design of transformer in the PSFB converter is presented. The design equations for the transformer are derived and analyzed in details, and an example design of the transformer for a 12V, 1200W server power supply application is showed as the result of analysis.

Safety Analysis and Safety Measures of 22900/1200V Oil Immersed Transformer at Power Supply System (전철 급전시스템의 22900/1200V 유입변압기 안전성 분석)

  • Lee, Jong-Su;Lee, Jongwoo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.9
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    • pp.1335-1342
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    • 2013
  • Subway is electrified railway system nowadays, in which liquid dielectric transformers have been widely used, though mold type transformers are replacing it. The transformers supplies large electric power and have innate hazards causing accidents under operation. A number of researcher have carried out on failures of it and have oriented to identify transformer's failure causes and how to maintain it healthy state. The transformer failures can cause serious accidents which can provoke economic loss and leads persons to kill. In this paper, we carried out a safety activity to reveal hazards and to estimate risk of subway liquid dielectric transformers using FMEA, HAZOP and What-if methods. In case of installing safety devices in oil immersed transformer, we tried to evaluate an effect on a subsystem's failure rate. We proposed how to design subsystem failure rate and safety device failure rates.

A Study on the optical MODEM Development for high Speed Data Transmission (고속 데이터 전송을 위한 광모뎀 개발에 관한 연구)

  • 은재정;권원현;김석희;박한규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.12 no.6
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    • pp.612-620
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    • 1987
  • In this paper, the optical modem for data link realization is designed with the advantages of optical fiber, large bandwidth, high speed and long haul communication. Modem interface, CCITT V.24 and EIA RS-232C is adopted for the compatibility with existing systems, and biphase coding format is used for digital modulation. And also, modem has serveral loopback test facility in order to diagnose system itself. Optical transmitter and receiver are designed to have the receiving sensitivity of -30dBm at $10^-9$BER in the short wavelength region. Developed system is capable of transmitting data rate at 1200bps up to 57.6Kbps in sync., and at any bps within DC to 200Kbps in async transmission.

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A Study on the ASK Communication Modem over Electrical Power Lines (전력선을 이용한 ASK통신 모뎀에 관한 연구)

  • 사공석진;송문규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.9
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    • pp.951-962
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    • 1992
  • The layout of electrical power distribution networks never involved communications aspects. As a result their transmission properties severly complicate the use as data links. Futhermore bandwidth as well as transmission power is restricted. Nevertheless, power distribution net works represent a most attractive medium for digital communication purposes due to an ever increasing demand, e.g., for environment management of buildings, office automation, and remote meter reading or security monitoring. In this paper, a power line modem which is capable of transmitting and receiving data at 1200 bps using OOK-BASK through 220V AC power lines is implemented. The receiver includes noncoherent detector and performs soft decision. The OLM circuits can be simplified by use of microprocessor. The PLM also satisfies CENELEC, European standards, and can be applied to home automation system.

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