• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.144-147
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• 2017

In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.408-413
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• 2016

The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.174-178
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• 2017

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.

• Korean Journal of Exercise Nutrition
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• v.25 no.2
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• pp.15-19
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• 2021

[Purpose] Skeletal muscle glycogen is a determinant of endurance capacity for some athletes. Ginger is well known to possess nutritional effects, such as anti-diabetic effects. We hypothesized that ginger extract (GE) ingestion increases skeletal muscle glycogen by enhancing fat oxidation. Thus, we investigated the effect of GE ingestion on exercise capacity, skeletal muscle glycogen, and certain blood metabolites in exercised rats. [Methods] First, we evaluated the influence of GE ingestion on body weight and elevation of exercise performance in rats fed with different volumes of GE. Next, we measured the skeletal muscle glycogen content and free fatty acid (FFA) levels in GE-fed rats. Finally, we demonstrated that GE ingestion contributes to endurance capacity during intermittent exercise to exhaustion. [Results] We confirmed that GE ingestion increased exercise performance (p<0.05) and elevated the skeletal muscle glycogen content compared to the nonGE-fed (CE, control exercise) group before exercise (Soleus: p<0.01, Plantaris: p<0.01, Gastrocnemius: p<0.05). Blood FFA levels in the GE group were significantly higher than those in the CE group after exercise (p<0.05). Moreover, we demonstrated that exercise capacity was maintained in the CE group during intermittent exercise (p<0.05). [Conclusion] These findings indicate that GE ingestion increases skeletal muscle glycogen content and exercise performance through the upregulation of fat oxidation.

• Journal of Electrochemical Science and Technology
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• v.8 no.4
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• pp.323-330
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• 2017

$M_2GeO_4$ (M = Co, Fe and Ni) was synthesized as an anode material for lithium-ion batteries and its electrochemical characteristics were investigated. The $Fe_2GeO_4$ electrode exhibited an initial discharge capacity of $1127.8mAh\;g^{-1}$ and better capacity retention than $Co_2GeO_4$ and $Ni_2GeO_4$. A diffusion coefficient of lithium ion in the $Fe_2GeO_4$ electrode was measured to be $12.7{\times}10^{-8}cm^2s^{-1}$, which was higher than those of the other two electrodes. The electrochemical performance of the $Fe_2GeO_4$ electrode was improved by coating carbon onto the surface of $Fe_2GeO_4$ particles. The carbon-coated $Fe_2GeO_4$ electrode delivered a high initial discharge capacity of $1144.9mAh\;g^{-1}$ with good capacity retention. The enhanced cycling performance was mainly attributed to the carbon-coated layer that accommodates the volume change of the active materials and improves the electronic conductivity. Our results demonstrate that the carbon-coated $Fe_2GeO_4$ can be a promising anode material for achieving high energy density lithium-ion batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.21-22
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• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.39-44
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• 1999

주파수 무선센서에 의한 자동직경제어방식으로 쵸크랄스키법에 의해 Bi4Ge3O12 단결정을 육성하였다. Bi4Ge3O12의 화학양론적 조성으로부터 Bi2O3와 GeO2의 조성비를 변화시키면서 단결정을 육성하였다. 광학적인 투과도 조사결과, 화학양론적 조성에서 가장 우수한 투과도를 나타내었고 과잉의 Bi2O3에서는 투과도가 현저히 낮아졌다. 또한 육성된 단결정의 결함밀도는 ∼1×103/cm2이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.81-84
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• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• Applied Microscopy
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• v.46 no.3
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• pp.160-163
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• 2016

Effect of dealloying condition on the formation of nanoporous structure in melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy has been investigated in the present study. In as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy spinodal decomposition occurs in the undercooled liquid during cooling, leading to amorphous phase separation. By immersing the as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy in 5 wt% HCl solution, Al-rich amorphous region is leached out, resulting in an interconnected nano-porous $GeO_x$ with an amorphous structure. The dealloying temperature strongly affects the whole dealloying process. At higher dealloying temperature, dissolution kinetics and surface diffusion/agglomeration rate become higher, resulting in the accelerated dealloying kinetics, i.e., larger dealloying depth and coarser pore-ligament structure.