Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM

PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.